Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

Abstract: Systems and methods for synchronization of radio frequency (RF) generators are described. One of the methods includes receiving, by a first RF generator, a first recipe set, which includes information regarding a first plurality of pulse blocks for operating the first RF generator. The method further includes receiving, by a second RF generator, a second recipe set, which includes information regarding a second plurality of pulse blocks for operating a second RF generator. Upon receiving a digital pulsed signal, the method includes executing the first recipe set and executing the second recipe set. The method further includes outputting a first one of the pulse blocks of the first plurality based on the first recipe set in synchronization with a synchronization signal. The method includes outputting a first one of the pulse blocks of the second plurality based on the second recipe set in synchronization with the synchronization signal.

Abstract: In one embodiment, the disclosed apparatus is a heat-pipe cooling system that includes a conical structure having an upper portion that is configured to be formed above a dielectric window with the conical structure being configured to condense vapor from a heat-transfer fluid placed or incorporated within a volume formed between the dielectric window and the conical structure. At least one cooling coil is formed on an exterior portion of the conical structure. Other apparatuses and systems are disclosed.

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

Abstract: Systems and methods for synchronization of radio frequency (RF) pulsing schemes and of sensor data collection are described. One of the methods includes receiving, by an RF generator, a first set of one or more variable levels and one or more duty cycles of an RF signal. The method further includes receiving, by the RF generator from a pulse controller, a synchronization signal having a plurality of pulses. The method also includes generating, during a clock cycle of a clock signal, multiple instances of a first plurality of states of the RF signal in synchronization with the plurality of pulses of the synchronization signal. Each of the first plurality of states of the RF signal has a corresponding one of the one or more variable levels of the first set and a corresponding one of the one or more duty cycles of the first set.

Abstract: In one embodiment, the disclosed apparatus is a heat-pipe cooling system that includes a conical structure having an upper portion that is truncated. The conical structure is configured to be formed above a dielectric window with the conical structure being configured to condense vapor from a heat-transfer fluid placed or formed within a volume formed between the dielectric window and the conical structure. At least one cooling coil is formed on an exterior portion of the conical structure. Other apparatuses and systems are disclosed.

Abstract: A temperature control system comprises an enclosure having an intake aperture and an exhaust aperture. An air amplifier disposed inside the enclosure. A gas supply line is connected to the air amplifier through the intake aperture. The gas supply line supplies a first flow of gas to the air amplifier. The air amplifier amplifies the first flow of gas to a second flow of gas inside the enclosure. The second flow of gas exits through the exhaust aperture.

Abstract: Systems and techniques for providing for semiconductor processing chambers configured for use with two concentric edge rings with dual-lift mechanisms are disclosed. The dual-lift mechanisms may each have a first lifter structure and a second lifter structure which may be each at least partially independently actuatable. The first lifter structure may be used to move a lower edge ring of the edge rings between two or more vertically offset positions, and the second lifter structure may be used to raise and lower an upper edge ring of the edge rings. The dual-lift mechanism may be interfaced to the chamber housing of the semiconductor processing chamber.

Abstract: In one embodiment, the disclosed apparatus is a heat-pipe cooling system that includes a conical structure having an upper portion that is truncated. The conical structure is configured to be formed above a dielectric window with the conical structure being configured to condense vapor from a heat-transfer fluid placed or formed within a volume formed between the dielectric window and the conical structure. At least one cooling coil is formed on an exterior portion of the conical structure. Other apparatuses and systems are disclosed.

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

Abstract: Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.

Abstract: Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.

Abstract: Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.

Abstract: Pad-assisted electropolishing of the substrate is conducted by performing anodic dissolution of metal at a first portion of the substrate and simultaneously mechanically buffing a second portion of the substrate with a buffing pad. Anodic dissolution includes forming a thin liquid layer of electropolishing liquid between the anodic substrate and a cathodic electropolishing head. The location of electrical contacts between the substrate and power supply allow peripheral edge regions of the substrate to be mechanically buffed with the pad. Preferably, a substrate is further planararized using an isotropic material-removal technique. An apparatus includes an electropolishing head that is movable to a position proximate to a first portion of a substrate to form a thin gap, and a buffing pad that mechanically buffs a second portion of the substrate using minimal pressure.

Abstract: Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.

Abstract: Pad-assisted electropolishing of the substrate is conducted by performing anodic dissolution of metal at a first portion of the substrate and simultaneously mechanically buffing a second portion of the substrate with a buffing pad. Anodic dissolution includes forming a thin liquid layer of electropolishing liquid between the anodic substrate and a cathodic electropolishing head. The location of electrical contacts between the substrate and power supply allow peripheral edge regions of the substrate to be mechanically buffed with the pad. Preferably, a substrate is further planararized using an isotropic material-removal technique. An apparatus includes an electropolishing head that is movable to a position proximate to a first portion of a substrate to form a thin gap, and a buffing pad that mechanically buffs a second portion of the substrate using minimal pressure.

Abstract: Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.

Abstract: Pad-assisted electropolishing of the substrate is conducted by performing anodic dissolution of metal at a first portion of the substrate and simultaneously mechanically buffing a second portion of the substrate with a buffing pad. Anodic dissolution includes forming a thin liquid layer of electropolishing liquid between the anodic substrate and a cathodic electropolishing head. The location of electrical contacts between the substrate and power supply allow peripheral edge regions of the substrate to be mechanically buffed with the pad. Preferably, a substrate is further planararized using an isotropic material-removal technique. An apparatus includes an electropolishing head that is movable to a position proximate to a first portion of a substrate to form a thin gap, and a buffing pad that mechanically buffs a second portion of the substrate using minimal pressure.