Abstract: A magnetic memory element that has a stress-induced magnetic anisotropy. The memory element has a ferromagnetic free layer having a switchable magnetization orientation switchable, a ferromagnetic reference layer having a pinned magnetization orientation, and a non-magnetic spacer layer therebetween. The free layer may be circular, essentially circular or nearly circular.

Abstract: The present invention provides an adjustable crash stop. The stiffness or load of the crash stop may be varied by rotating the stop and thereby varying the point of contact between the actuator assembly and the crash stop. The point of contact is on an arcuate contact surface of a cantilever supported spring. The spring is supported by a stem that can be positioned in several different rotational positions such that the contact point is at different locations on the contact surface. The stiffness at each contact point changes as its distance from the hinge point of the spring changes.