Patents by Inventor John Sudijono

John Sudijono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250125195
    Abstract: Embodiments of the disclosure relate to methods using an oligomer film to protect a substrate surface. The oligomer film is formed on the substrate surface with a first feature and a second feature each having a feature depth. The first feature has a first critical dimension (CD) and the second feature has a second CD. The semiconductor substrate surface is exposed to one or more monomers to form the oligomer film, and the oligomer film forms selectively on the bottom and fills a portion of the feature depth. The oligomer film fills the feature depth to substantially the same or the same height in each of the first feature and the second feature. Methods of forming semiconductor devices using the oligomer film are also disclosed.
    Type: Application
    Filed: October 11, 2023
    Publication date: April 17, 2025
    Applicant: Applied Materials, Inc.
    Inventors: Feng Q. Liu, Xinke Wang, Liqi Wu, Qihao Zhu, Mark Saly, Jiang Lu, John Sudijono, David Thompson
  • Publication number: 20250069894
    Abstract: Embodiments of the present disclosure are directed to selective etching processes. The processes include flowing a precursor comprising one or more of an interhalogen, a halogen-containing species, a pseudohalogen species, a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species and an amine or a phosphine, or a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species with a sulfur-containing species, into a semiconductor processing chamber containing a substrate, and forming an activated species of the precursor to etch a substrate. The substrate has a plurality of alternating layers of silicon oxide and silicon nitride thereon and a trench formed through the plurality of alternating layers. The silicon nitride layers are selectively etched relative to the silicon oxide layers at an etch selectivity of greater than or equal to 500:1.
    Type: Application
    Filed: July 18, 2023
    Publication date: February 27, 2025
    Applicant: Applied Materials Inc.
    Inventors: Doreen Wei Ying Yong, Tuck Foong Koh, Mikhail Korolik, John Sudijono, Paul E. Gee
  • Publication number: 20250051902
    Abstract: Transition metal dichalcogenide (TMDC) films and methods for conformally depositing TMDC films on a substrate surface are described. The substrate surface may have one or more features formed therein, one or more layers formed thereon, and combinations thereof. The substrate surface is exposed to a transition metal precursor and an oxidant to form a transition metal oxide film in a first phase. The transition metal oxide film is exposed to a chalcogenide precursor to convert the transition metal oxide film to the TMDC film in a second phase.
    Type: Application
    Filed: August 10, 2023
    Publication date: February 13, 2025
    Applicant: Applied Materials, Inc.
    Inventors: Chandan Das, Bencherki Mebarki, Jiecong Tang, Mohammed Mahdi Tavakoli, John Sudijono, Joung Joo Lee
  • Publication number: 20250043413
    Abstract: Embodiments include a modular high-frequency emission source for growth of a low roughness nanocrystalline diamond film. In an embodiment, a method of fabricating a nanocrystalline diamond (NCD) film includes loading a nanodiamond-seeded silicon wafer or a bare silicon wafer that has been surface-treated and incubated into a microwave plasma-enhanced chemical vapor deposition (MWPECVD) chamber, and processing the nanodiamond-seeded silicon wafer or the bare silicon wafer that has been surface-treated and incubated with a plasma of CxHy (y?x), CO2 and H2, at power greater than 50 W, to form a layer of nanocrystalline diamond thereon.
    Type: Application
    Filed: July 31, 2023
    Publication date: February 6, 2025
    Inventors: Sze Chieh Yvonne Tan, Vicknesh Sahmuganathan, John Sudijono, Philip Allan Kraus, Christian Valencia, Thai Cheng Chua
  • Publication number: 20240420962
    Abstract: Embodiments of the present disclosure are directed to selective etching processes. The processes include an etching chemistry (a plasma of a fluorine-containing precursor and a first gas mixture), and a passivating chemistry (a plasma of a sulfur-containing precursor and a second gas mixture). In some embodiments, the sulfur-containing precursor and the second gas mixture are present in a ratio of sulfur-containing precursor to second gas mixture in a range of from 0.01 to 5. The methods include etching a substrate having a plurality of alternating layers of silicon oxide and silicon nitride thereon and a trench formed through the plurality of alternating layers. The silicon nitride layers are selectively etched relative to the silicon oxide layers at an etch selectivity of greater than or equal to 500:1.
    Type: Application
    Filed: June 16, 2023
    Publication date: December 19, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Doreen Wei Ying Yong, Tuck Foong Koh, John Sudijono, Mikhail Korolik, Paul E. Gee, Thai Cheng Chua, Philip A. Kraus
  • Patent number: 12142477
    Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).
    Type: Grant
    Filed: April 14, 2023
    Date of Patent: November 12, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Chandan Kr Barik, Michael Haverty, Muthukumar Kaliappan, Cong Trinh, Bhaskar Jyoti Bhuyan, John Sudijono, Anil Kumar Tummanapelli, Richard Ming Wah Wong, Yingqian Chen
  • Publication number: 20240363317
    Abstract: Methods and apparatus for cleaning a dielectric tube are described. The dielectric tube is exposed to a cleaning gas comprising a fluorine-containing compound and a microwave plasma is generated. The dielectric tube is cleaned to restore transparency and increase electronic coupling between the microwave waveguide and the plasma through the dielectric tube.
    Type: Application
    Filed: April 25, 2023
    Publication date: October 31, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Vicknesh Sahmuganathan, Sze Chieh Tan, Kok Keong Lim, Song Seng Low, Yi Kun Kelvin Goh, Abdul Rahman Bin Abu Bakar, Syed Muhammad Darwis, Cheng Hong Tan, John Sudijono, Han Yan Koh
  • Publication number: 20240352621
    Abstract: Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a plasma to form a nanocrystalline diamond film. The resulting nanocrystalline diamond films are formed on an interfacial oxide-rich amorphous layer between the nanocrystalline diamond film and a silicon substrate.
    Type: Application
    Filed: April 20, 2023
    Publication date: October 24, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Sze Chieh Tan, Vicknesh Sahmuganathan, Christian W. Valencia, Thai Cheng Chua, Masahiro Kawasaki, Jenn-Yue Wang, John Sudijono
  • Patent number: 12110584
    Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.
    Type: Grant
    Filed: June 28, 2021
    Date of Patent: October 8, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Chandan Das, Susmit Singha Roy, Bhaskar Jyoti Bhuyan, John Sudijono, Abhijit Basu Mallick, Mark Saly
  • Publication number: 20240332014
    Abstract: Molecular layer deposition (MLD) is used to provide conformal and uniform doping technology for HAR and reentrant structures. MLD is used to deposit a conformal carbon-based film that contains a doping element. Thermal annealing is then used to make the doping element diffuse into the semiconductor material. For HAR structures, a conformal layer is used with low temperature doping, precise control, and the carbon-based film can be easily removed during doping or after doping. The amount of doping can be controlled by changing the thickness of MLD carbon-based film.
    Type: Application
    Filed: March 22, 2024
    Publication date: October 3, 2024
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Xinke Wang, Long Liu, Mark Saly, Bhaskar Jyoti Bhuyan, Jiecong Tang, John Sudijono
  • Publication number: 20240271272
    Abstract: Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.
    Type: Application
    Filed: April 15, 2024
    Publication date: August 15, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Yong Wang, Doreen Wei Ying Yong, Bhaskar Jyoti Bhuyan, John Sudijono
  • Patent number: 12037679
    Abstract: Apparatuses and methods for forming a film on a substrate are described. The film is formed on the substrate by depositing an adamantane monomer and an initiator on the substrate to form a polymerizable seed layer and curing the polymerizable seed layer to form a polyadamantane layer.
    Type: Grant
    Filed: December 15, 2021
    Date of Patent: July 16, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Vicknesh Sahmuganathan, Jiteng Gu, Zhongxin Chen, Kian Ping Loh, John Sudijono, Haisen Xu, Sze Chieh Tan, Yuanxing Han, Jiecong Tang, Eswaranand Venkatasubramanian, Abhijit Basu Mallick
  • Publication number: 20240234127
    Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.
    Type: Application
    Filed: March 25, 2024
    Publication date: July 11, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Xinke Wang, Bhaskar Jyoti Bhuyan, Zeqing Shen, Susmit Singha Roy, Abhijit Basu Mallick, Jiecong Tang, John Sudijono, Mark Saly
  • Publication number: 20240229231
    Abstract: Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.
    Type: Application
    Filed: February 23, 2024
    Publication date: July 11, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Sze Chieh Tan, Vicknesh Sahmuganathan, Eswaranand Venkatasubramanian, Abhijit Basu Mallick, John Sudijono
  • Publication number: 20240183035
    Abstract: Methods of selectively depositing a selectively deposited layer are described. Exemplary processing methods may include treating a substrate comprising a non-hydroxyl-containing surface and a second surface with one or more of ozone, hydrogen peroxide, or a hydrogen plasma to passivate the second surface. In one or more embodiments, a selectively deposited layer is then selectively deposited on the non-hydroxyl-containing surface and not on the second surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the non-hydroxyl-containing surface and not on the second surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial selectively deposited layer. The methods may include removing a second precursor effluent from the substrate.
    Type: Application
    Filed: November 22, 2022
    Publication date: June 6, 2024
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Xinke Wang, Zeqing Shen, Susmit Singha Roy, Abhijit Basu Mallick, Bhaskar Jyoti Bhuyan, Jiecong Tang, John Sudijono, Long Liu
  • Patent number: 11987875
    Abstract: Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.
    Type: Grant
    Filed: January 12, 2023
    Date of Patent: May 21, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Yong Wang, Doreen Wei Ying Yong, Bhaskar Jyoti Bhuyan, John Sudijono
  • Patent number: 11972940
    Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.
    Type: Grant
    Filed: April 18, 2022
    Date of Patent: April 30, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Xinke Wang, Bhaskar Jyoti Bhuyan, Zeqing Shen, Susmit Singha Roy, Abhijit Basu Mallick, Jiecong Tang, John Sudijono, Mark Saly
  • Publication number: 20240120210
    Abstract: Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing precursor into the remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the first fluorine-containing precursor and the sulfur-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.
    Type: Application
    Filed: October 11, 2022
    Publication date: April 11, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Mikhail Korolik, Paul E. Gee, Wei Ying Doreen Yong, Tuck Foong Koh, John Sudijono, Philip A. Kraus, Thai Cheng Chua
  • Patent number: 11946134
    Abstract: Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.
    Type: Grant
    Filed: January 27, 2022
    Date of Patent: April 2, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Sze Chieh Tan, Vicknesh Sahmuganathan, Eswaranand Venkatasubramanian, Abhijit Basu Mallick, John Sudijono
  • Publication number: 20240055255
    Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include treating a substrate comprising a carbon-containing surface and a silicon-containing surface with one or more of ozone or hydrogen peroxide to passivate the silicon-containing surface. In one or more embodiments, a carbon-containing layer is then selectively deposited on the carbon-containing surface and not on the silicon-containing surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the carbon-containing surface and not on the silicon-containing surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate.
    Type: Application
    Filed: August 4, 2022
    Publication date: February 15, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Zeqing Shen, Xinke Wang, Susmit Singha Roy, Abhijit Basu Mallick, Bhaskar Jyoti Bhuyan, John Sudijono