Patents by Inventor John Sudijono
John Sudijono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240120210Abstract: Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing precursor into the remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the first fluorine-containing precursor and the sulfur-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.Type: ApplicationFiled: October 11, 2022Publication date: April 11, 2024Applicant: Applied Materials, Inc.Inventors: Mikhail Korolik, Paul E. Gee, Wei Ying Doreen Yong, Tuck Foong Koh, John Sudijono, Philip A. Kraus, Thai Cheng Chua
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Patent number: 11946134Abstract: Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.Type: GrantFiled: January 27, 2022Date of Patent: April 2, 2024Assignee: Applied Materials, Inc.Inventors: Sze Chieh Tan, Vicknesh Sahmuganathan, Eswaranand Venkatasubramanian, Abhijit Basu Mallick, John Sudijono
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Publication number: 20240055255Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include treating a substrate comprising a carbon-containing surface and a silicon-containing surface with one or more of ozone or hydrogen peroxide to passivate the silicon-containing surface. In one or more embodiments, a carbon-containing layer is then selectively deposited on the carbon-containing surface and not on the silicon-containing surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the carbon-containing surface and not on the silicon-containing surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate.Type: ApplicationFiled: August 4, 2022Publication date: February 15, 2024Applicant: Applied Materials, Inc.Inventors: Zeqing Shen, Xinke Wang, Susmit Singha Roy, Abhijit Basu Mallick, Bhaskar Jyoti Bhuyan, John Sudijono
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Patent number: 11894230Abstract: Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.Type: GrantFiled: January 25, 2023Date of Patent: February 6, 2024Assignee: Applied Materials, Inc.Inventors: Vicknesh Sahmuganathan, Jiteng Gu, Eswaranand Venkatasubramanian, Kian Ping Loh, Abhijit Basu Mallick, John Sudijono, Zhongxin Chen
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Publication number: 20240027912Abstract: Methods of depositing a conformal carbon-containing film on an EUV photoresist to reduce line edge roughness (LER) are described. Exemplary processing methods may include flowing a first precursor over a patterned EUV surface to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the patterned EUV photoresist. A second precursor may then be flowed over the patterned EUV photoresist to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the patterned EUV photoresist. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces.Type: ApplicationFiled: July 25, 2022Publication date: January 25, 2024Applicant: Applied Materials, Inc.Inventors: Xinke Wang, Zeqing Shen, Susmit Singha Roy, Abhijit Basu Mallick, Bhaskar Jyoti Bhuyan, Jiecong Tang, John Sudijono, Mark Saly
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Publication number: 20230402285Abstract: Methods of depositing a conformal carbon-containing spacer layer are described. Exemplary processing methods may include flowing a first precursor over a patterned surface and a substrate to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the substrate. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces. The patterned surface may be an EUV photoresist pattern, and the carbon-containing film may be formed on the sidewall and act as a spacer to reduce the critical dimension (CD).Type: ApplicationFiled: June 14, 2022Publication date: December 14, 2023Applicant: Applied Materials, Inc.Inventors: Xinke Wang, Zeqing Shen, Susmit Singha Roy, Abhijit Basu Mallick, Bhaskar Jyoti Bhuyan, Jiecong Tang, John Sudijono, Mark Saly
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Publication number: 20230382933Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: ApplicationFiled: August 10, 2023Publication date: November 30, 2023Applicant: Applied Materials, Inc.Inventors: Chandan Kr Barik, John Sudijono, Chandan Das, Doreen Wei Ying Yong, Mark Saly, Bhaskar Jyoti Bhuyan, Feng Q. Liu
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Publication number: 20230360967Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.Type: ApplicationFiled: May 9, 2022Publication date: November 9, 2023Applicant: Applied Materials, Inc.Inventors: Chandan Das, Susmit Singha Roy, Supriya Ghosh, John Sudijono, Abhijit Basu Mallick, Jiecong Tang
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Publication number: 20230335391Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.Type: ApplicationFiled: April 18, 2022Publication date: October 19, 2023Applicant: Applied Materials, Inc.Inventors: Xinke Wang, Bhaskar Jyoti Bhuyan, Zeqing Shen, Susmit Singha Roy, Abhijit Basu Mallik, Jiecong Tang, John Sudijono, Mark Saly
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Patent number: 11760768Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: GrantFiled: April 21, 2021Date of Patent: September 19, 2023Assignee: Applied Materials, Inc.Inventors: Chandan Kr Barik, John Sudijono, Chandan Das, Doreen Wei Ying Yong, Mark Saly, Bhaskar Jyoti Bhuyan, Feng Q. Liu
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Publication number: 20230279540Abstract: Apparatuses and methods for forming a film on a substrate are described. The film is formed on the substrate by depositing an adamantane monomer and an initiator on the substrate to form a polymerizable seed layer and curing the polymerizable seed layer to form a polyadamantane layer.Type: ApplicationFiled: December 15, 2021Publication date: September 7, 2023Applicants: Applied Materials, Inc., National University of SingaporeInventors: Vicknesh Sahmuganathan, Jiteng Gu, Zhongxin Chen, Kian Ping Loh, John Sudijono, Haisen Xu, Sze Chieh Tan, Yuanxing Han, Jiecong Tang, Eswaranand Venkatasubramanian, Abhijit Basu Mallick
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Publication number: 20230260800Abstract: Hard masks and methods of forming hard masks are described. The hard mask has an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa. The method comprises exposing a substrate to a deposition gas comprising a dopant gas or a precursor (solid (e.g. Alkylborane compounds) or liquid (e.g. Borazine)), a carbon gas and argon at a temperature less than or equal to 550 C, and igniting a plasma from the deposition gas to form an ultrananocrystalline diamond film having an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa.Type: ApplicationFiled: February 15, 2022Publication date: August 17, 2023Applicants: Applied Materials, Inc., National University of SingaporeInventors: Vicknesh Sahmuganathan, Eswaranand Venkatasubramanian, Jiteng Gu, Kian Ping Loh, Abhijit Basu Mallick, John Sudijono
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Publication number: 20230253201Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).Type: ApplicationFiled: April 14, 2023Publication date: August 10, 2023Applicants: Applied Materials, Inc., National University of SingaporeInventors: Chandan Kr Barik, Michael Haverty, Muthukumar Kaliappan, Cong Trinh, Bhaskar Jyoti Bhuyan, John Sudijono, Anil Kumar Tummanapelli, Richard Ming Wah Wong, Yingqian Chen
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Publication number: 20230235452Abstract: Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.Type: ApplicationFiled: January 27, 2022Publication date: July 27, 2023Applicant: Applied Materials, Inc.Inventors: Sze Chieh Tan, Vicknesh Sahmuganathan, Eswaranand Venkatasubramanian, Abhijit Basu Mallick, John Sudijono
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Publication number: 20230207314Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.Type: ApplicationFiled: December 27, 2021Publication date: June 29, 2023Applicant: Applied Materials, Inc.Inventors: Chandan Das, Susmit Singha Roy, Bhaskar Jyoti Bhuyan, Supriya Ghosh, Jiecong Tang, John Sudijono, Abhijit Basu Mallick, Mark Saly
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Publication number: 20230175120Abstract: Methods of depositing an adamantane film are described, which may be used in the manufacture of integrated circuits. Methods include processing a substrate in which an adamantane seed layer is deposited on a substrate, converting to a diamond nuclei layer having an increased crystallinity relative to the adamantane seed layer and then grown into full nanocrystalline diamond film from the diamond nuclei layer.Type: ApplicationFiled: December 5, 2022Publication date: June 8, 2023Applicants: Applied Materials, Inc., National University of SingaporeInventors: Sze Chieh Tan, Vicknesh Sahmuganathan, Eswaranand Venkatasubramanian, Abhijit Basu Mallick, John Sudijono, Jiteng Gu, Kian Ping Loh
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Publication number: 20230170217Abstract: Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.Type: ApplicationFiled: January 25, 2023Publication date: June 1, 2023Applicants: Applied Materials, Inc., National University of SingaporeInventors: Vicknesh Sahmuganathan, Jiteng Gu, Eswaranand Venkatasubramanian, Kian Ping Loh, Abhijit Basu Mallick, John Sudijono, Zhongxin Chen
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Patent number: 11658025Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).Type: GrantFiled: January 18, 2021Date of Patent: May 23, 2023Assignee: Applied Materials, Inc.Inventors: Chandan Kr Barik, Michael Haverty, Muthukumar Kaliappan, Cong Trinh, Bhaskar Jyoti Bhuyan, John Sudijono, Anil Kumar Tummanapelli, Richard Ming Wah Wong, Yingqian Chen
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Publication number: 20230142926Abstract: Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.Type: ApplicationFiled: January 12, 2023Publication date: May 11, 2023Applicant: Applied Materials, Inc.Inventors: Yong Wang, Doreen Wei Ying Yong, Bhaskar Jyoti Bhuyan, John Sudijono
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Patent number: 11621161Abstract: Methods of selectively depositing films on substrates are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Also described is exposing a substrate surface comprising a metal surface and a dielectric surface to a docking precursor to form a passivation film.Type: GrantFiled: October 27, 2020Date of Patent: April 4, 2023Assignee: Applied Materials, Inc.Inventors: Yong Wang, Andrea Leoncini, Doreen Wei Ying Yong, Bhaskar Jyoti Bhuyan, John Sudijono