Patents by Inventor John Sukamto

John Sukamto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Control of electrolyte composition in a copper electroplating apparatus
    Patent number: 9045841
    Abstract: In a copper electroplating apparatus having separate anolyte and catholyte portions, the concentration of anolyte components (e.g., acid or copper salt) is controlled by providing a diluent to the recirculating anolyte. The dosing of the diluent can be controlled by the user and can follow a pre-determined schedule. For example, the schedule may specify the diluent dosing parameters, so as to prevent precipitation of copper salt in the anolyte. Thus, precipitation-induced anode passivation can be minimized.
    Type: Grant
    Filed: January 26, 2012
    Date of Patent: June 2, 2015
    Assignee: Novellus Systems, Inc.
    Inventors: Bryan Buckalew, Jonathan Reid, John Sukamto, Zhian He, Seshasayee Varadarajan, Steven T. Mayer
  • Control of electrolyte composition in a copper electroplating apparatus
    Patent number: 8128791
    Abstract: In a copper electroplating apparatus having separate anolyte and catholyte portions, the concentration of anolyte components (e.g., acid or copper salt) is controlled by providing a diluent to the recirculating anolyte. The dosing of the diluent can be controlled by the user and can follow a pre-determined schedule. For example, the schedule may specify the diluent dosing parameters, so as to prevent precipitation of copper salt in the anolyte. Thus, precipitation-induced anode passivation can be minimized.
    Type: Grant
    Filed: October 30, 2006
    Date of Patent: March 6, 2012
    Assignee: Novellus Systems, Inc.
    Inventors: Bryan Buckalew, Jonathan Reid, John Sukamto, Zhian He, Seshasayee Varadarajan, Steven T. Mayer
  • Two step copper electroplating process with anneal for uniform across wafer deposition and void free filling on ruthenium coated wafers
    Patent number: 7964506
    Abstract: A two-step semiconductor electroplating process deposits copper onto wafers coated with a semi-noble metal in manner that is uniform across the wafer and free of voids after a post electrofill anneal. A seed-layer plating bath nucleates copper uniformly and conformably at a high density in a very thin film using a unique pulsed waveform. The wafer is then annealed before a second bath fills the features. The seed-layer anneal improves adhesion and stability of the semi-noble to copper interface, and the resulting copper interconnect stays void-free after a post electrofill anneal.
    Type: Grant
    Filed: March 6, 2008
    Date of Patent: June 21, 2011
    Assignee: Novellus Systems, Inc.
    Inventors: Thomas Ponnuswamy, John Sukamto, Jonathan Reid, Steve Mayer