Abstract: A method for pseudomorphic growth and integration of a strain-compensated metastable and/or unstable compound base having incorporated oxygen and an electronic device incorporating the base is described. The strain-compensated base is doped by substitutional and/or interstitial placement of a strain-compensating atomic species. The electronic device may be, for example, a SiGe NPN HBT.

Abstract: A method for manufacturing a radiation hardened semiconductor device, having defined active region and isolation region. The isolation region containing an isolation material and active region containing a transition region between active and isolation region, sometimes denoted a bird's beak region. Wherein the transition region is implanted with germanium and boron, to prevent formation of leakage paths between active devices, or within an active device. The implanted area can be further limited to that area of the transition region that is adapted to be covered by a gate material, such as polysilicon.

Abstract: A method for manufacturing a radiation hardened semiconductor device, having defined active region and isolation region. The isolation region containing an isolation material and active region containing a transition region between active and isolation region, sometimes denoted a bird's beak region. Wherein the transition region is doped with germanium and boron, to prevent formation of leakage paths between active devices, or within an active device. The doped area can be further limited to that area of the transition region that is adapted to be covered by a gate material, such as polysilicon.

Abstract: A method for manufacturing a radiation hardened semiconductor device, having defined active region and isolation region. The isolation region containing an isolation material and active region containing a transition region between active and isolation region, sometimes denoted a bird's beak region. Wherein the transition region is implanted with germanium and boron, to prevent formation of leakage paths between active devices, or within an active device. The implanted area can be further limited to that area of the transition region that is adapted to be covered by a gate material, such as polysilicon.

Abstract: A method of forming a recessed electrically-insulating field oxide region in a semiconductor substrate is disclosed.

Abstract: A radiation-hardened field oxide comprises a thin layer of high-quality thermal oxide, a thick layer of borophosphosilica glass and a diffusion barrier layer of undoped oxide, with the boron and phosphorous provising recombination sites for electron-hole pairs.