Patents by Inventor John T. Leonard
John T. Leonard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11967586Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.Type: GrantFiled: June 29, 2022Date of Patent: April 23, 2024Assignee: Apple Inc.Inventors: Dmitry S. Sizov, Ion Bita, Jean-Jacques P. Drolet, John T. Leonard, Jonathan S. Steckel, Nathaniel T. Lawrence, Xiaobin Xin, Ranojoy Bose
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Publication number: 20230018406Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.Type: ApplicationFiled: June 29, 2022Publication date: January 19, 2023Inventors: Dmitry S. Sizov, Ion Bita, Jean-Jacques P. Drolet, John T. Leonard, Jonathan S. Steckel, Nathaniel T. Lawrence, Xiaobin Xin, Ranojoy Bose
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Patent number: 11404400Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.Type: GrantFiled: January 22, 2019Date of Patent: August 2, 2022Assignee: Apple Inc.Inventors: Dmitry S. Sizov, Ion Bita, Jean-Jacques P. Drolet, John T. Leonard, Jonathan S. Steckel, Nathaniel T. Lawrence, Xiaobin Xin, Ranojoy Bose
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Publication number: 20220181513Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.Type: ApplicationFiled: December 1, 2021Publication date: June 9, 2022Applicant: The Regents of the University of CaliforniaInventors: Erin C. Young, Benjamin P. Yonkee, John T. Leonard, Tal Margalith, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Patent number: 11217722Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.Type: GrantFiled: July 11, 2016Date of Patent: January 4, 2022Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Erin C. Young, Benjamin P. Yonkee, John T. Leonard, Tal Margalith, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Publication number: 20210104504Abstract: A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.Type: ApplicationFiled: August 17, 2017Publication date: April 8, 2021Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Benjamin P. Yonkee, Erin C. Young, Charles Forman, John T. Leonard, SeungGeun Lee, Dan Cohen, Robert M. Farrell, Michael Iza, Burhan Saifaddin, Abdullah Almogbel, Humberto Foronda, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Publication number: 20200343230Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.Type: ApplicationFiled: January 22, 2019Publication date: October 29, 2020Inventors: Dmitry S. Sizov, Ion Bita, Jean-Jacques P. Drolet, John T. Leonard, Jonathan S. Steckel, Nathaniel T. Lawrence, Xiaobin Xin, Ranojoy Bose
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Patent number: 10685835Abstract: A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).Type: GrantFiled: November 1, 2016Date of Patent: June 16, 2020Assignees: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY (KACST)Inventors: Benjamin P. Yonkee, Erin C. Young, John T. Leonard, Tal Margalith, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Patent number: 10591774Abstract: A display may have display layers that form an array of pixels. The display layers may include a first layer that includes a light-blocking matrix and a second layer that overlaps the first layer. The first layer may include quantum dot elements formed in openings in the light-blocking matrix. The light-blocking matrix may be formed from a reflective material such as metal. The second layer may include color filter elements that overlap corresponding quantum dot elements in the first layer. Substrate layers may be used to support the first and second layers and to support thin-film transistor circuitry that is used in controlling light transmission through the array of pixels. The display layers may include a liquid crystal layer, polarizer layers, filter layers for reflecting red and green light and/or other light to enhance light recycling, and layers with angularly dependent transmission characteristics.Type: GrantFiled: August 31, 2017Date of Patent: March 17, 2020Assignee: Apple Inc.Inventors: Jean-Jacques P. Drolet, Yuan Chen, Jonathan S. Steckel, Ion Bita, Dmitry S. Sizov, Chia Hsuan Tai, John T. Leonard, Lai Wang, Ove Lyngnes, Xiaobin Xin, Zhibing Ge
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Publication number: 20190074404Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.Type: ApplicationFiled: July 11, 2016Publication date: March 7, 2019Applicant: The Regents of the University of CaliforniaInventors: Erin C. Young, Benjamin P. Yonkee, John T. Leonard, Tal Margalith, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Publication number: 20180374699Abstract: A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).Type: ApplicationFiled: November 1, 2016Publication date: December 27, 2018Applicant: The Regents of the University of CaliforniaInventors: Benjamin P. Yonkee, Erin C. Young, John T. Leonard, Tal Margalith, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Publication number: 20180292713Abstract: A display may have display layers that form an array of pixels. The display layers may include a first layer that includes a light-blocking matrix and a second layer that overlaps the first layer. The first layer may include quantum dot elements formed in openings in the light-blocking matrix. The light-blocking matrix may be formed from a reflective material such as metal. The second layer may include color filter elements that overlap corresponding quantum dot elements in the first layer. Substrate layers may be used to support the first and second layers and to support thin-film transistor circuitry that is used in controlling light transmission through the array of pixels. The display layers may include a liquid crystal layer, polarizer layers, filter layers for reflecting red and green light and/or other light to enhance light recycling, and layers with angularly dependent transmission characteristics.Type: ApplicationFiled: August 31, 2017Publication date: October 11, 2018Inventors: Jean-Jacques P. Drolet, Yuan Chen, Jonathan S. Steckel, Ion Bita, Dmitry S. Sizov, Chia Hsuan Tai, John T. Leonard, Lai Wang, Ove Lyngnes, Xiaobin Xin, Zhibing Ge