Patents by Inventor John T. Orton

John T. Orton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6311281
    Abstract: A processor has an external pin that can be asserted to lock in new clock ratio information dynamically. A state machine of the processor defines a stop grant state that is utilized to halt the internal clocking signal of the processor. A storage location, such as a register, is utilized to load new clock frequency information into the clock generator circuit of the processor. De-asserting the external pin of the processor causes the processor to resume normal operations, but at the newly set clock frequency.
    Type: Grant
    Filed: March 2, 1999
    Date of Patent: October 30, 2001
    Inventors: Edwin J. Pole, II, John T. Orton, Cau L. Nguyen, Gurbir Singh, Xia Dai, Ravi Nagaraj
  • Patent number: 6118306
    Abstract: A system includes a component (e.g., a processor) that includes a clock generator that generates an internal clock running at a frequency. A controller generates a clock frequency change indication and places the component into a low activity state (e.g., deep sleep, stop grant, or other state). The clock generator is reset by the clock frequency change indication to change the clock's frequency while the component is in the low activity state. Storage elements containing different values are selectable to set the clock frequency. The storage elements include fuse banks and input pins.
    Type: Grant
    Filed: April 30, 1999
    Date of Patent: September 12, 2000
    Assignee: Intel Corporation
    Inventors: John T. Orton, Cau L. Nguyen, Gurbir Singh, Xia Dai, Raviprakash Nagaraj, Edwin J. Pole, II
  • Patent number: 4775550
    Abstract: A planarization process for a double metal very large scale integration (VLSI) technology is disclosed. To compensate for an irregular surface topology encountered in a dielectric medium between the two metals, a CVD dielectric layer and a glass layer are first deposited above the first metal. Then an etch-back process is used to uniformly etch back the CVD dielectric and the glass layers at the same rate, leaving a planarized surface for subsequent deposition of a second dielectric layer and a second metal layer.
    Type: Grant
    Filed: June 3, 1986
    Date of Patent: October 4, 1988
    Assignee: Intel Corporation
    Inventors: John K. Chu, Sanjiv K. Mittal, John T. Orton, Jagir S. Multani, Robert Jecmen