Abstract: A display system comprising a structure defining an opening; and a monolithic fastener comprising a first portion comprising a base having a first stud comprising a head and a cutout, and a second stud opposite the first stud and comprising a flange for engaging the opening in the structure; and a second portion comprising a keyhole-shaped opening sized to receive the first stud, and a ridge positioned adjacent the keyhole-shaped opening for engaging the head of the first stud; and a flexible connecting portion connecting the first portion to the second portion.

Abstract: A system for improving yield and increasing throughput on processes that remove flux and flux residues from openings between 3D semiconductor structures. The system employs high flow, directed, pressurized nitrogen to assist in de-wetting the areas between semiconductor devices where solder bumps or micro bumps attach one device to another.

Abstract: A UV-assisted system for stripping a photoresist from a semiconductor substrate that comprises an ultraviolet (UV) exposure station (“UV station”) having a UV radiation source and a UV controller. The UV station is adapted to receive the substrate and to apply UV radiation over an entire surface of the substrate, wherein the UV radiation changes material properties of the photoresist and loosening bonding of the photoresist to the substrate. The system further incudes at least one additional station adapted to receive the substrate after exposure to UV in the UV station and to remove the loosened photoresist from the substrate. The UV controller is configured to modify the dose set point by taking into account an area of the wafer, and an angle of dispersion of the UV radiation from the UV radiation source.

Abstract: A system and method for removing organic materials from a surface of a substrate are provided, where the organic materials can include photoresist, temporary bonding materials, adhesives, fluxes, and their respective residues. In the system and method, the substrate is immersed in a first fluid in an immersion station. The substrate is transported from the immersion station to a process chamber, where the substrate is sprayed via a high-velocity spray nozzle with a second fluid in the process chamber. The first fluid and the second fluid is incompatible with stainless steel, and the organic materials are removed from the surface of the substrate via the immersion of the substrate in the first fluid and the spraying of the substrate via the second fluid.

Abstract: An immersion station for performing lift off of metals and other materials (e.g., organic or inorganic films) from a plurality of wafers comprises an immersion chamber having a conical bottom portion, a drain coupled thereto, a spray bar having nozzles adapted to spray chemical solvent at a high flow rate into the immersion chamber, and an immersion tool positioned within the chamber having a cassette with compartments for holding a plurality of wafers, wherein the immersion tool has openings for exposure to the chemical solvent spray. The immersion tool and the spray bar nozzles are configured so as to provide an even distribution of solvent across the plurality of wafers in the cassette to induce metals to lift off from the plurality of wafers, and solvent and metal debris removed from the wafers flows downwardly to the conical bottom portion which directs the flow into the drain.

Abstract: A display system includes: a first upright oriented vertically; a second upright oriented vertically and offset horizontally from the first upright by a frame separation distance, the first upright and the second upright each having a plurality of openings therein and together defining a display opening therebetween; a first fastener attached to a display panel and inserted into one of the plurality of openings in the first upright; and a second fastener attached to the display panel and inserted into one of the plurality of openings in the second upright, each of the first fastener and the second fastener comprising a first portion and a second portion, the first portion having a first stud and a second stud, the second portion having an opening for receiving the first stud, the first stud configured to be inserted through a display panel and secured in the opening, the second stud configured to be inserted into one of the plurality of holes in the first upright or second upright, whereby the first and secon

Abstract: A display system includes: a first upright oriented vertically; a second upright oriented vertically and offset horizontally from the first upright by a frame separation distance, the first upright and the second upright each having a plurality of openings therein and together defining a display opening therebetween; a first fastener attached to a display panel and inserted into one of the plurality of openings in the first upright; and a second fastener attached to the display panel and inserted into one of the plurality of openings in the second upright, each of the first fastener and the second fastener comprising a first portion and a second portion, the first portion having a first stud and a second stud, the second portion having an opening for receiving the first stud, the first stud configured to be inserted through a display panel and secured in the opening, the second stud configured to be inserted into one of the plurality of holes in the first upright or second upright, whereby the first and secon

Abstract: A system for removing flux from openings formed in a substrate that has openings (e.g., sized 20 microns or less) formed therein includes a spay nozzle device that has a spray nozzle arm that is formed at an angle of about 45 degrees or less for discharging fluid towards the openings in the substrate for flux removal. The angle is between about 30 degrees and 45 degrees.

Abstract: A housing of a wafer processing system includes at least one chamber exhaust outlet and at least one chemical exhaust outlet. The chamber exhaust outlet is formed in the housing for venting gas from the interior of the housing and the chemical exhaust outlet is formed in the housing for venting gas that flows along at least one of: (a) a first flow path defined between the splash shield in a raised position and the collection trays in the lowered position; and (b) a second flow path in which the gas flows through the collection chamber to the chemical exhaust outlet.

Abstract: An apparatus for supporting and maneuvering a wafer comprises a handle having a gas inlet adapted to couple to a gas supply, a supporting surface coupled to the handle section including a frame structure having edge segments connecting at vertices and spoke elements extending from a center of the frame structure to the vertices, a gas supply channel coupled to the gas inlet that extends from the handle and branches into channels that run through the spoke elements, and a plurality of nozzles positioned at the vertices on the supporting surface and coupled to the channels in the spoke elements. Gas provided to the plurality of nozzles exits the nozzles in a stream directed parallel to the supporting surface and the stream of gas generates forces that enable wafers to be securely supported in a floating manner over the supporting surface without coming into direct contact with the supporting surface.

Abstract: A plurality of endpoints in a wet etching process of a substrate are determined. A plurality of benchmark end points during a wet etching process of a first substrate are determined, using first light information represented by a HSV color model for sample locations of the first substrate. Etch parameters are generated for a wet etching process for a second substrate. The generated etch parameters are used with second light information represented by at least one value of the Hue, Saturation, Value color model associated with a plurality of sample locations of the second substrate to reach respective end points during the wet etching process of a second substrate.

Abstract: A system for removing flux from openings formed in a substrate that has openings (e.g., sized 20 microns or less) formed therein includes a spay nozzle device that has a spray nozzle arm that is formed at an angle of about 45 degrees or less for discharging fluid towards the openings in the substrate for flux removal. The angle is between about 30 degrees and 45 degrees.

Abstract: A semiconductor etch process is provided in which an undercut is minimized during an etch process through tight control of etch profile, recognition of etch completion, and minimization of over etch time to increase productivity.

Abstract: The wafer processing system includes a rotatable wafer support member for supporting a wafer and a plurality of collections trays disposed about a peripheral edge of the wafer support member. The collection trays are arranged in a stacked configuration, each collection tray having an inner wall portion and an outer wall portion that converge to define a trough section for collecting fluid. The system includes a chamber exhaust outlet that is formed in the housing for venting gas from the interior of the housing outside of the collection trays and a chemical exhaust outlet that is formed in the housing for venting gas that flows through the collection chamber to the chemical exhaust outlet. The chemical exhaust outlet is fluidly isolated from the chamber exhaust outlet.

Abstract: A wafer processing system according to one embodiment includes a chamber housing having an exhaust and a rotatable wafer support member for supporting a wafer. A filter fan unit is contained internally within the chamber housing and includes a variable speed fan. A controller is in communication with the variable speed fan to allow the housing to be maintained at either a net positive pressure or a net negative pressure relative to a surrounding environment (e.g., the clean room) outside the housing and also the relative pressures of the chamber housing, the surrounding environment and a handler area can be monitored and controlled.

Abstract: A plurality of endpoints in a wet etching process of a substrate are determined. A plurality of benchmark end points during a wet etching process of a first substrate are determined, using first light information represented by a HSV color model for sample locations of the first substrate. Etch parameters are generated for a wet etching process for a second substrate. The generated etch parameters are used with second light information represented by at least one value of the Hue, Saturation, Value color model associated with a plurality of sample locations of the second substrate to reach respective end points during the wet etching process of a second substrate.

Abstract: A two-level tape frame rinse assembly is configured for grasping the substrate so as to create a gap between the substrate and a backside support plate that allows the backside of the wafer to be rinsed and spun dry after rinsing.

Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.

Abstract: A system and method are provided for etching semiconductor wafers (integrated circuit substrates) with advanced packaging using a two-step wet etching process. The first etch step uses an etchant that is non-selective to at least the wafer material (silicon) and metals, such as copper and titanium, that are present in the wafer. The second etch step uses an etchant that is selective to the wafer material (silicon) and has low selectivity for the metals, thereby leaving them at least substantially intact.