Patents by Inventor John Targe Torvik

John Targe Torvik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a hybrid substrate having a thin silicon carbide membrane layer
    Patent number: 7112515
    Abstract: A hybrid semiconductor substrate assembly is made by first forming a silicon oxide (SiOx) layer within a silicon carbide wafer, thus forming a silicon carbide membrane on top of the silicon oxide layer and on a surface of the silicon carbide wafer. Optionally, the silicon oxide layer is then thermally oxidized in the presence of steam or oxygen. A substrate-of-choice is then wafer bonded to the silicon carbide membrane, optionally in the presence of a wetting layer that is located intermediate the substrate-of-choice and the silicone carbide membrane, the wetting layer containing silicon. The silicon oxide layer is then removed by hydrofluoric acid etching, to thereby provide a hybrid semiconductor substrate assembly that includes the substrate-of-choice wafer bonded to the silicon carbide membrane. The hybrid semiconductor substrate assembly is then annealed.
    Type: Grant
    Filed: January 20, 2004
    Date of Patent: September 26, 2006
    Assignee: Astralux, Inc.
    Inventor: John Targe Torvik
  • Method of making a hybride substrate having a thin silicon carbide membrane layer
    Publication number: 20040171230
    Abstract: A hybrid semiconductor substrate assembly is made by first forming a silicon oxide (SiOx) layer within a silicon carbide wafer, thus forming a silicon carbide membrane on top of the silicon oxide layer and on a surface of the silicon carbide wafer. Optionally, the silicon oxide layer is then thermally oxidized in the presence of steam or oxygen. A substrate-of-choice is then wafer bonded to the silicon carbide membrane, optionally in the presence of a wetting layer that is located intermediate the substrate-of-choice and the silicone carbide membrane, the wetting layer containing silicon. The silicon oxide layer is then removed by hydrofluoric acid etching, to thereby provide a hybrid semiconductor substrate assembly that includes the substrate-of-choice wafer bonded to the silicon carbide membrane. The hybrid semiconductor substrate assembly is then annealed.
    Type: Application
    Filed: January 20, 2004
    Publication date: September 2, 2004
    Applicant: Astralux, Inc.
    Inventor: John Targe Torvik