Abstract: A vapor conduit for use in an apparatus for bulk vapor phase crystal growth, an apparatus for bulk vapor phase crystal growth, and a process for bulk vapor phase crystal growth are described. The vapor conduit is a flow conduit defining a passage means adapted for transport of vapor from a source volume to a growth volume, wherein a flow restrictor is provided in the passage means between the source volume and the growth volume and wherein the flow conduit further comprises a flow director structured to direct vapor flow downstream of the flow restrictor away from a longitudinal center line of the conduit and for example towards an edge of the conduit.

Abstract: A vapour conduit for use in an apparatus for bulk vapour phase crystal growth, an apparatus for bulk vapour phase crystal growth, and a process for bulk vapour phase crystal growth are described. The vapour conduit is a flow conduit defining a passage means adapted for transport of vapour from a source volume to a growth volume, wherein a flow restrictor is provided in the passage means between the source volume and the growth volume and wherein the flow conduit further comprises a flow director structured to direct vapour flow downstream of the flow restrictor away from a longitudinal centre line of the conduit and for example towards an edge of the conduit.

Abstract: An apparatus for crystal growth including a source chamber configured to contain a source material, a growth chamber, a passage for transport of vapour from the source chamber to the growth chamber, and a support provided within the growth chamber that is configured to support a seed crystal. The coefficient of thermal expansion of the support is greater than the coefficient of thermal expansion of the growth chamber.

Abstract: An apparatus for vapour phase crystal growth comprising an envelope assembly with a one source module defining at least one source volume, a growth module defining at least one growth volume, and a manifold module defining at least one manifold volume. The source module, manifold module and growth module are configured co-operably to define a fluidly continuous envelope volume including a flow restrictor between the source volume and the growth volume. A vacuum vessel containing one or more of the envelope assemblies. An evacuator to evacuate the vacuum vessel. A fluid communication path between the envelope volume and the vacuum vessel associated with each source volume at a location on the source volume side of its associated flow restrictor. A closure mechanism is configured to restrict the fluid communication path between each source volume and the vacuum vessel. A method of employing such an apparatus is also disclosed.

Abstract: The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates, said device comprising a process chamber which is arranged in a reactor housing and comprises a substrate holder for receiving at least one substrate. A gas-admittance body is arranged opposite the substrate holder, said body comprising a gas-leak surface facing the substrate holder and provided with a plurality of essentially evenly distributed outlets for process gases to be introduced into the process chamber. In order to improve the observation of the surface temperature, the inventive device is provided with a plurality of sensors arranged to the rear of the outlets and respectively aligned with an associated outlet.

Abstract: Apparatus for bulk vapor phase crystal growth comprising: at least one source zone and at least one sink zone each associated with means for independent temperature control within the zone; and at least one passage means adapted for transport of vapor from source to sink zone; and additionally comprising means for in-situ monitoring of the sink zone; wherein means for monitoring is substantially non-intrusive in terms of temperature regulation within the sink zone; process for bulk vapor phase crystal growth employing the apparatus; method for starting up the process; method for controlling the process; use for any bulk vapor transport technique; equipment for monitoring growth using the apparatus or process; and crystal grown with the apparatus or process.