Patents by Inventor John Tresek

John Tresek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for selective chemical vapor deposition of nanotubes
    Patent number: 7361579
    Abstract: A method of fabricating a nanotube structure which includes providing a substrate, providing a mask region positioned on the substrate, patterning and etching through the mask region to form at least one trench, depositing a conductive material layer within the at least one trench, depositing a solvent based nanoparticle catalyst onto the conductive material layer within the at least one trench, removing the mask region and subsequent layers grown thereon using a lift-off process, and forming at least one nanotube electrically connected to the conductive material layer using chemical vapor deposition with a methane precursor.
    Type: Grant
    Filed: May 18, 2006
    Date of Patent: April 22, 2008
    Assignee: Motorola, Inc.
    Inventors: Ruth Yu-Ai Zhang, Raymond K. Tsui, John Tresek, Jr., Adam M. Rawlett
  • METHOD FOR SELECTIVE CHEMICAL VAPOR DEPOSITION OF NANOTUBES
    Publication number: 20060228477
    Abstract: A method of fabricating a nanotube structure which includes providing a substrate, providing a mask region positioned on the substrate, patterning and etching through the mask region to form at least one trench, depositing a conductive material layer within the at least one trench, depositing a solvent based nanoparticle catalyst onto the conductive material layer within the at least one trench, removing the mask region and subsequent layers grown thereon using a lift-off process, and forming at least one nanotube electrically connected to the conductive material layer using chemical vapor deposition with a methane precursor.
    Type: Application
    Filed: May 18, 2006
    Publication date: October 12, 2006
    Applicant: MOTOROLA, INC.
    Inventors: Ruth Zhang, Raymond Tsui, John Tresek, Adam Rawlett
  • Method for selective chemical vapor deposition of nanotubes
    Patent number: 7074699
    Abstract: A method of fabricating a nanotube structure which includes providing a substrate, providing a mask region positioned on the substrate, patterning and etching through the mask region to form at least one trench, depositing a conductive material layer within the at least one trench, depositing a solvent based nanoparticle catalyst onto the conductive material layer within the at least one trench, removing the mask region and subsequent layers grown thereon using a lift-off process, and forming at least one nanotube electrically connected to the conductive material layer using chemical vapor deposition with a methane precursor.
    Type: Grant
    Filed: December 18, 2003
    Date of Patent: July 11, 2006
    Assignee: Motorola, Inc.
    Inventors: Ruth Yu-Ai Zhang, Raymond K. Tsui, John Tresek, Jr., Adam M. Rawlett
  • Method for selective chemical vapor deposition of nanotubes
    Publication number: 20040132269
    Abstract: A method of fabricating a nanotube structure which includes providing a substrate, providing a mask region positioned on the substrate, patterning and etching through the mask region to form at least one trench, depositing a conductive material layer within the at least one trench, depositing a solvent based nanoparticle catalyst onto the conductive material layer within the at least one trench, removing the mask region and subsequent layers grown thereon using a lift-off process, and forming at least one nanotube electrically connected to the conductive material layer using chemical vapor deposition with a methane precursor.
    Type: Application
    Filed: December 18, 2003
    Publication date: July 8, 2004
    Inventors: Ruth Yu-Al Zhang, Raymond K. Tsui, John Tresek, Adam M. Rawlett
  • Method for selective chemical vapor deposition of nanotubes
    Patent number: 6689674
    Abstract: A method of fabricating a nanotube structure which includes providing a substrate, providing a mask region positioned on the substrate, patterning and etching through the mask region to form at least one trench, depositing a conductive material layer within the at least one trench, depositing a solvent based nanoparticle catalyst onto the conductive material layer within the at least one trench, removing the mask region and subsequent layers grown thereon using a lift-off process, and forming at least one nanotube electrically connected to the conductive material layer using chemical vapor deposition with a methane precursor.
    Type: Grant
    Filed: May 7, 2002
    Date of Patent: February 10, 2004
    Assignee: Motorola, Inc.
    Inventors: Ruth Yu-ai Zhang, Raymond K. Tsui, John Tresek, Jr., Adam M. Rawlett
  • Method for selective chemical vapor deposition of nanotubes
    Publication number: 20030211322
    Abstract: A method of fabricating a nanotube structure which includes providing a substrate, providing a mask region positioned on the substrate, patterning and etching through the mask region to form at least one trench, depositing a conductive material layer within the at least one trench, depositing a solvent based nanoparticle catalyst onto the conductive material layer within the at least one trench, removing the mask region and subsequent layers grown thereon using a lift-off process, and forming at least one nanotube electrically connected to the conductive material layer using chemical vapor deposition with a methane precursor.
    Type: Application
    Filed: May 7, 2002
    Publication date: November 13, 2003
    Inventors: Ruth Yu-ai Zhang, Raymond K. Tsui, John Tresek, Adam M. Rawlett