Patents by Inventor John Trow
John Trow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20040163764Abstract: A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat conical configuration extending to a centrally located gas inlet. The plasma chamber enclosure structure having a sidewall with a lower cylindrical portion generally transverse to a pedestal when positioned over a reactor base, and a transitional portion between the lower cylindrical portion and the ceiling. The transitional portion extends inwardly from the lower cylindrical portion and includes a radius of curvature. The structure being adapted to cover the base to comprise the RF plasma reactor and to define a plasma-processing volume over the pedestal. The structure being formed of a dielectric material of silicon, silicon carbide, quartz, and/or alumina being capable of transmitting inductive power therethrough from an adjacent antenna.Type: ApplicationFiled: February 25, 2004Publication date: August 26, 2004Applicant: Applied Materials, Inc.Inventors: Kenneth S. Collins, Michael Rice, John Trow, Douglas Buchberger, Craig A. Roderick
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Patent number: 6736931Abstract: A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat conical configuration extending to a centrally located gas inlet. The plasma chamber enclosure structure having a sidewall with a lower cylindrical portion generally transverse to a pedestal when positioned over a reactor base, and a transitional portion between the lower cylindrical portion and the ceiling. The transitional portion extends inwardly from the lower cylindrical portion and includes a radius of curvature. The structure being adapted to cover the base to comprise the RF plasma reactor and to define a plasma-processing volume over the pedestal. The structure being formed of a dielectric material of silicon, silicon carbide, quartz, and/or alumina being capable of transmitting inductive power therethrough from an adjacent antenna.Type: GrantFiled: October 2, 2001Date of Patent: May 18, 2004Inventors: Kenneth S. Collins, Michael Rice, John Trow, Douglas Buchberger, Craig A. Roderick
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Patent number: 6623596Abstract: A plasma reactor for processing a workpiece includes a reactor enclosure defining a processing chamber, a base within the chamber for supporting the workpiece during processing thereof, a semiconductor window electrode overlying the base, a gas inlet system for admitting a plasma precursor gas into the chamber, an electrical terminal coupled to the semiconductor window electrode, an inductive antenna adjacent one side of the semiconductor window electrode opposite the base for coupling power into the interior of said chamber through the semiconductor window electrode.Type: GrantFiled: March 13, 2000Date of Patent: September 23, 2003Assignee: Applied Materials, IncInventors: Kenneth S. Collins, Michael Rice, John Trow, Douglas Buchberger, Eric Askarinam, Joshua Chiu-Wing Tsui, David W. Groechel, Raymond Hung
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Patent number: 6524432Abstract: There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.Type: GrantFiled: March 30, 2000Date of Patent: February 25, 2003Assignee: Applied Materials Inc.Inventors: Kenneth Collins, Michael Rice, John Trow, Douglas Buchberger, Eric Askarinam, Joshua Tsui, David Groechel, Raymond Hung
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Patent number: 6454898Abstract: In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body.Type: GrantFiled: January 11, 2000Date of Patent: September 24, 2002Assignee: Applied Materials, Inc.Inventors: Kenneth Collins, Michael Rice, Douglas Buchberger, Craig Roderick, Eric Askarinam, Gerhard Schneider, John Trow, Joshua Tsui, Dennis Grimard, Gerald Yin, Robert Wu
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Patent number: 6444085Abstract: The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.Type: GrantFiled: September 29, 2000Date of Patent: September 3, 2002Assignee: Applied Materials Inc.Inventors: Kenneth S. Collins, Michael Rice, John Trow, Douglas Buchberger, Craig A. Roderick
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Publication number: 20020020499Abstract: A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat conical configuration extending to a centrally located gas inlet. The plasma chamber enclosure structure having a sidewall with a lower cylindrical portion generally transverse to a pedestal when positioned over a reactor base, and a transitional portion between the lower cylindrical portion and the ceiling. The transitional portion extends inwardly from the lower cylindrical portion and includes a radius of curvature. The structure being adapted to cover the base to comprise the RF plasma reactor and to define a plasma-processing volume over the pedestal. The structure being formed of a dielectric material of silicon, silicon carbide, quartz, and/or alumina being capable of transmitting inductive power therethrough from an adjacent antenna.Type: ApplicationFiled: October 2, 2001Publication date: February 21, 2002Applicant: Applied Materials, Inc.Inventors: Kenneth S. Collins, Michael Rice, John Trow, Douglas Buchberger, Craig A. Roderick
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Patent number: 6252354Abstract: In an RF plasma reactor including a reactor chamber with a process gas inlet, a workpiece support, an RF signal applicator facing a portion of the interior of the chamber and an RF signal generator having a controllable RF frequency and an RF signal output coupled to an input of the RF signal applicator, the invention tunes the RF signal generator to the plasma-loaded RF signal applicator by sensing an RF parameter at the RF signal generator or at the RF signal applicator and then adjusting the frequency of the RF signal generator so as to optimize the parameter. The invention further controls the RF signal generator output magnitude (power, current or voltage) by optimizing the value of the same RF parameter or another RF parameter. The reactor preferably includes a fixed tuning circuit between the RF signal generator and the RF signal applicator.Type: GrantFiled: November 4, 1996Date of Patent: June 26, 2001Assignee: Applied Materials, Inc.Inventors: Kenneth Collins, Craig Roderick, Douglas Buchberger, John Trow, Viktor Shel
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Patent number: 6165311Abstract: The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar manner relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.Type: GrantFiled: May 13, 1996Date of Patent: December 26, 2000Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Michael Rice, John Trow, Douglas Buchberger, Craig A. Roderick
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Patent number: 6077384Abstract: The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor window, a base within the chamber for supporting the workpiece during processing thereof, a gas inlet system for admitting a plasma precursor gas into the chamber, and an inductive antenna adjacent a side of the semiconductor window opposite the base for coupling power into the interior of the chamber through the semiconductor window electrode.Type: GrantFiled: February 2, 1996Date of Patent: June 20, 2000Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Michael Rice, John Trow, Douglas Buchberger, Eric Askarinam, Joshua Chiu-Wing Tsui, David W. Groechel, Raymond Hung
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Patent number: 6074512Abstract: In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body.Type: GrantFiled: July 15, 1997Date of Patent: June 13, 2000Assignee: Applied Materials, Inc.Inventors: Kenneth Collins, Michael Rice, Douglas Buchberger, Craig Roderick, Eric Askarinam, Gerhard Schneider, John Trow, Joshua Tsui, Dennis Grimard, Gerald Yin, Robert Wu
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Patent number: 6054013Abstract: There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.Type: GrantFiled: October 24, 1996Date of Patent: April 25, 2000Assignee: Applied Materials, Inc.Inventors: Kenneth Collins, Michael Rice, John Trow, Douglas Buchberger, Eric Askarinam, Joshua Tsui, David Groechel, Raymond Hung
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Patent number: 5824607Abstract: A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome to provide a plasma source. The antenna generates a high density, low energy plasma inside the chamber. The chamber includes a plurality of magnets for generating magnetic fields. Ion flux is concentrated in certain areas of the chamber and is diverted from other areas of the chamber by using these magnetic fields. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides a means of cleaning the deposition residues from the reactor walls while minimizing damage to the wafer pedestal.Type: GrantFiled: February 6, 1997Date of Patent: October 20, 1998Assignee: Applied Materials, Inc.Inventors: John Trow, Tetsuya Ishikawa
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Patent number: 5574410Abstract: The disclosure discusses impedance matching circuits based on parallel-resonant L-C tank circuits, and describes a low-loss design for an adjustable inductance element suitable for use in these parallel tank circuits. The application of an impedance matching circuit to a plasma process is also disclosed; in this context, a local impedance transformation circuit is used to improve power transfer to the plasma source antenna.Type: GrantFiled: November 9, 1994Date of Patent: November 12, 1996Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, John Trow, Craig A. Roderick, Jay D. Pinson, II, Douglas A. Buchberger, II, Robert P. Hartlage, Viktor Shel
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Patent number: 5572170Abstract: A plasma processing system including a plasma processing chamber; an antenna circuit including a source antenna positioned relative to the processing chamber so as to couple energy into a plasma within the chamber during processing, the antenna circuit having a first terminal and a second terminal with the source antenna electrically coupled between the first and second terminals; and a local impedance transforming network connected to the antenna circuit, the local impedance transforming network including a first capacitor connected between the first terminal and a grounded node, and a second capacitor connected between the second terminal and the grounded node.Type: GrantFiled: August 22, 1995Date of Patent: November 5, 1996Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, John Trow, Craig A. Roderick, Jay D. Pinson, II, Douglas A. Buchberger, II, Robert P. Hartlage, Viktor Shel
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Patent number: 5392018Abstract: The disclosure discusses impedance matching circuits based on parallel-resonant L-C tank circuits, and describes a low-loss design for an adjustable inductance element suitable for use in these parallel tank circuits. The application of an impedance matching circuit to a plasma process is also disclosed; in this context, a local impedance transformation circuit is used to improve power transfer to the plasma source antenna.Type: GrantFiled: November 12, 1992Date of Patent: February 21, 1995Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, John Trow, Craig A. Roderick, Jay D. Pinson, II, Douglas A. Buchberger, II, Robert P. Hartlage, Viktor Shel