Abstract: A structure and manufacturing process produce an airbridge for semiconductor devices and circuit applications. Magnesium oxide (MgO) is used to fabricate airbridges. The use of evaporated MgO allows for a thicker and strong airbridge structure, and increases the yield during the singulation of the fabricated devices and circuits. Using MgO as a sacrificial layer provides the flexibility for the sacrificial layer to be removed during the backend process, thereby avoiding any damage in the airbridge structures. In an alternative embodiment, some or all of the MgO can be retained in the airbridge structure, allowing for high density interconnects especially for ground connected interconnects.

Abstract: A method for fabricating an electronic device includes fabricating a plurality of electronic components on a substrate; fabricating a plurality of posts on the plurality of electronic components; depositing filling material between the plurality of posts; and depositing a plurality of top layers, with each top layer disposed on a respective post, thereby fabricating the electronic device. Each top layer is composed of a metal. The step of fabricating the posts includes: fabricating the posts to have identical heights above the substrate. Each post is thermally-conductive, and may be composed of gold. The filling material is composed of MgO, which may be electron beam evaporated to be disposed between the posts. The step of depositing the filling material includes: controlling a thickness of the MgO being deposited by controlling an evaporation rate of the MgO.