Abstract: The present invention provides an apparatus for forming a chemical mechanical polishing pad, comprising a tank with polymeric materials, a storage silo with microspheres, a isocyanate storage tank with isocyanates and a premix prep tank for forming a pre-mixture of the polymeric materials and the microspheres. The invention further provides a premix run tank for storing the pre-mixture, a mixer for forming a mixture of the pre-mixture and the isocyanates, a closed mold for reaction-injection molding the mixture and a vacuum for degassing at least one of the tank, isocyanate storage tank or the mold.

Abstract: The present invention provides a method of forming a chemical mechanical polishing pad comprising providing a polymeric matrix with fluid-filled unexpanded microspheres, curing the polymeric matrix and heating the polymeric matrix and the microspheres to expand the microspheres.

Abstract: The present invention provides a method of forming a chemical mechanical polishing pad comprising, providing a tank with polymeric materials, providing a storage silo with microspheres and providing an isocyanate storage tank with isocyanates. The invention further provides delivering the polymeric materials and the microspheres to a premix prep tank, forming a pre-mixture of the polymeric materials and the microspheres, delivering the pre-mixture to a premix run tank and forming a mixture of the pre-mixture and the isocyanates. Further the invention provides injecting the mixture into a closed mold, curing the polishing pad in the mold and degassing at least one of the tank, isocyanate storage tank and the mold.

Abstract: A resilient, laminated polishing pad for chemical mechanical polishing is disclosed. The polishing pad includes a base layer and a polishing layer bonded by a hot-melt adhesive. The hot-melt adhesive of the present invention provides a Tpeel strength for the polishing pad of at least greater than 40 Newtons at 305 mm/min, reducing pad delamination.

Abstract: The present invention provides a chemical mechanical polishing pad having reduced stress windows. In addition, the present invention provides a method of forming a chemical mechanical polishing pad, the method comprising, primary annealing a window separate from a polishing pad material and providing the polishing pad material in a periphery of the primary annealed window before a predetermined quench temperature of the primary annealed window. The method further comprises secondary annealing the window and the polishing pad material together and cutting the secondary annealed window and the polishing pad material to a predetermined thickness.

Abstract: The present invention provides a chemical mechanical polishing pad comprising a polishing pad having a window formed therein and wherein the window is formed from a reaction of an aliphatic polyisocyanate, a hydroxyl-containing material and a curing agent.

Abstract: The present invention provides a method of polishing a semiconductor device comprising, polishing the semiconductor device with a polishing pad, the polishing pad comprising, a polymeric matrix and a dissolvable substance. The dissolvable substance is located at a work surface of the polishing pad and in a subsurface proximate the work surface. The method further comprises dissolving the dissolvable substance at the work surface while polishing the semiconductor device and wearing away the polishing pad while polishing the semiconductor device such that the subsurface becomes a new work surface that polishes the semiconductor device.

Abstract: A polishing pad used in a method for polishing a semiconductor device is made by combining a polymeric matrix and a dissolvable substance that dissolves upon contact with a polishing slurry.

Abstract: The present invention provides a polishing pad for electrochemical mechanical polishing of conductive substrate. The pad comprises a plurality of grooves formed in a polishing surface of the polishing pad, the grooves being adapted to facilitate the flow of polishing fluid over the polishing pad. The conductive layers are respectively formed in the grooves and are in electrical communication with each other.

Abstract: The present invention provides a method of polishing a semiconductor device comprising, polishing the semiconductor device with a polishing pad, the polishing pad comprising, a polymeric matrix and a dissolvable substance. The dissolvable substance is located at a work surface of the polishing pad and in a subsurface proximate the work surface. The method further comprises dissolving the dissolvable substance at the work surface while polishing the semiconductor device and wearing away the polishing pad while polishing the semiconductor device such that the subsurface becomes a new work surface that polishes the semiconductor device.

Abstract: An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness and hydrolytic stability.

Abstract: Polishing pads are provided having a polishing surface formed from a material. The polishing surface has a topography produced by a thermoforming process. The topography consists of large and small features that facilitate the flow of polishing fluid and facilitate smoothing and planarizing.

Abstract: An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing, pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad also exhibits a stable morphology that can be reproduced easily and consistently. The pad surface has macro-texture that includes perforations as well as surface groove designs The surface groove designs have specific relationships between groove depth and overall pad thickness and groove.area and land area.

Abstract: This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrophilic polishing material and have an innovative surface topography and texture which generally improves predictability and polishing performance.

Abstract: This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrophilic polishing material and have an innovative surface topography and texture which generally improves predictability and polishing performance.

Abstract: An anti-scattering layer for polishing pad windows as used in chemical-mechanical planarization (CMP) systems is disclosed. The invention finds particular use in circumstances where the windows have a roughened lower surface. The anti-scattering layer is formed over the roughened lower surface of the window in a manner that significantly reduces light scattering while making optical in-situ measurements of a wafer undergoing a CMP process. The reduced light scattering results in an increased signal strength, which makes for more robust optical in-situ measurement capability.

Abstract: A polishing pad with a polishing layer having a macro-texture and a micro-texture wherein the polishing layer is formed by solidifying a flowable material, the polishing layer further comprising hard domains and soft domains, each domain having an average size less than 100 microns.

Abstract: A support belt to be used with a polishing belt. The support belt includes an interior layer made of a polymer, wherein said interior layer has a first free end and a second free end that abut one another but are not attached to one another so as to form a first seam and an adhesive placed on an exterior surface of the interior layer. An exterior layer made of a polymer and attached to the adhesive, wherein the exterior layer has a first free end and a second free end that abut one another but are not attached to one another so as to form a second seam.

Abstract: A polishing pad used in a method for polishing a semiconductor device is made by combining a polymeric matrix and a dissolvable substance that dissolves upon contact with a polishing slurry.

Abstract: A transparent portion of a polishing pad in the solid phase has an index of refraction nearly matched to the index of refraction of a fluid polishing composition for chemical mechanical polishing, which minimizes scattering of an optical beam at an interface of the transparent portion and the polishing composition.