Abstract: A planar lightwave circuit (PLC) includes a substrate, a tunable filter, a demultiplexer (DEMUX), and an optical processor each disposed on the substrate. The tunable filter is configured to filter at least one of a bandwidth or a wavelength of a Wavelength Division Multiplexed (WDM) optical input signal. The DEMUX is connected to the tunable filter and configured to receive a filtered WDM optical input signal at an input and to supply one of a plurality of channels of the filtered WDM input signal at a respective one of a plurality of outputs. Each of the plurality of channels corresponds to one of a plurality of wavelengths of the filtered WDM input signal. The optical processor includes a bit-delay interferometer communicating with a respective one of the plurality of outputs of the DEMUX. The optical processor is configured to receive one of the plurality of channels from the DEMUX and output a plurality of demodulated optical signal components.

Abstract: An optical receiver includes a first substrate including a demultiplexer and a first optical waveguide array. An input of the demultiplexer is configured to receive a wavelength division multiplexed optical input signal having a plurality of channels. Each of the plurality of channels corresponds to one of a plurality of wavelengths. Each of the plurality of outputs is configured to supply a corresponding one of the plurality of channels. The first optical waveguide array has a plurality of inputs. Each of the inputs of the first optical waveguide array is configured to receive a corresponding one of the plurality of channels. A second substrate is in signal communication with the first substrate and includes an optical detector array. The optical detector array has a plurality of inputs, each of which is configured to receive a corresponding one of the plurality of channels and generate an electrical signal in response thereto.

Abstract: A planar lightwave circuit (PLC) includes a substrate, a tunable filter, a demultiplexer (DEMUX), and an optical processor each disposed on the substrate. The tunable filter is configured to filter at least one of a bandwidth or a wavelength of a Wavelength Division Multiplexed (WDM) optical input signal. The DEMUX is connected to the tunable filter and configured to receive a filtered WDM optical input signal at an input and to supply one of a plurality of channels of the filtered WDM input signal at a respective one of a plurality of outputs. Each of the plurality of channels corresponds to one of a plurality of wavelengths of the filtered WDM input signal. The optical processor includes a bit-delay interferometer communicating with a respective one of the plurality of outputs of the DEMUX. The optical processor is configured to receive one of the plurality of channels from the DEMUX and output a plurality of demodulated optical signal components.

Abstract: An optical receiver includes a first substrate including a demultiplexer and a first optical waveguide array. An input of the demultiplexer is configured to receive a wavelength division multiplexed optical input signal having a plurality of channels. Each of the plurality of channels corresponds to one of a plurality of wavelengths. Each of the plurality of outputs is configured to supply a corresponding one of the plurality of channels. The first optical waveguide array has a plurality of inputs. Each of the inputs of the first optical waveguide array is configured to receive a corresponding one of the plurality of channels. A second substrate is in signal communication with the first substrate and includes an optical detector array. The optical detector array has a plurality of inputs, each of which is configured to receive a corresponding one of the plurality of channels and generate an electrical signal in response thereto.

Abstract: An intermediate structure used to form an integrated optics device comprising a substrate, a cladding on the substrate, at least one real waveguide on the cladding, and at least one dummy waveguide optically coupled with the real waveguide. The real waveguide forms a part of a predetermined planar lightwave circuit. The dummy waveguide does not form a part of the predetermined planar lightwave circuit.

Abstract: A plurality of mask images defines an optical circuit image in photoresist. Each of the mask images comprises parts of the optical circuit and the totality of all mask images together defines an optical circuit. The optical circuit is thus made up of plural optical elements some of which may be positioned in drop-in locations within the boundary of another optical circuit element. A photolithography system globally aligns and exposes the mask images in photoresist. The resultant composite image is substantially indistinguishable from a single image of the entire optical circuit. Different images for each of the mask image parts can be substituted with other images or image parts and thereby exponentially increasing the number of circuit permutations from a predetermined number of available mask images. A unique optical circuit, for example, can be generated from a pre-existing library of reticle images. The images are printed in predetermined locations on a substrate to define the desired optical circuit.

Abstract: A method is disclosed for forming an optical circuit on a substrate. The method includes the deployment of a plurality of mask images to define an optical circuit image in photoresist. Each of the mask images define parts of the optical circuit and the totality of all mask images substantially define an optical circuit. A photolithography system globally aligns and exposes the mask images in photoresist. The resultant composite image is substantially indistinguishable from a single image of the entire optical circuit. Different images for each of the mask image parts can be substituted with other images or image parts and thereby exponentially increasing the number of circuit permutations from a predetermined number of available mask images. The method is also applicable to generating a unique optical circuit from a pre-existing library of reticle images. The images are printed in predetermined locations on a substrate to define the desired optical circuit.

Abstract: Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiOxNy:D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices.

Abstract: Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiOxNy:D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices.

Abstract: Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiOxNy:D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices.

Abstract: Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiOxNy:D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices.