Abstract: A vertical power switching device, such as a vertical superjunction metal-oxide-semiconductor field-effect-transistor (MOSFET), in which termination structures in the corners of the integrated circuit are stretched to efficiently shape the lateral electric field. Termination structures in the device include such features as doped regions, field plates, insulator films, and high-voltage conductive regions and elements at the applied substrate voltage. Edges of these termination structures are shaped and placed according to a 2nd-order smooth, non-circular analytic function so as to extend deeper into the die corner from the core region of the device than a constant-distance path. Also disclosed are electrically floating guard rings in the termination region, to inhibit triggering of parasitic p-n-p-n structures.

Abstract: A vertical power switching device, such as a vertical superjunction metal-oxide-semiconductor field-effect-transistor (MOSFET), in which termination structures in the corners of the integrated circuit are stretched to efficiently shape the lateral electric field. Termination structures in the device include such features as doped regions, field plates, insulator films, and high-voltage conductive regions and elements at the applied substrate voltage. Edges of these termination structures are shaped and placed according to a 2nd-order smooth, non-circular analytic function so as to extend deeper into the die corner from the core region of the device than a constant-distance path. Also disclosed are electrically floating guard rings in the termination region, to inhibit triggering of parasitic p-n-p-n structures.

Abstract: A vertical power switching device, such as a vertical superjunction metal-oxide-semiconductor field-effect-transistor (MOSFET), in which termination structures in the corners of the integrated circuit are stretched to efficiently shape the lateral electric field. Termination structures in the device include such features as doped regions, field plates, insulator films, and high-voltage conductive regions and elements at the applied substrate voltage. Edges of these termination structures are shaped and placed according to a 2nd-order smooth, non-circular analytic function so as to extend deeper into the die corner from the core region of the device than a constant-distance path. Also disclosed are electrically floating guard rings in the termination region, to inhibit triggering of parasitic p-n-p-n structures.

Abstract: A vertical power switching device, such as a vertical superjunction metal-oxide-semiconductor field-effect-transistor (MOSFET), in which termination structures in the corners of the integrated circuit are stretched to efficiently shape the lateral electric field. Termination structures in the device include such features as doped regions, field plates, insulator films, and high-voltage conductive regions and elements at the applied substrate voltage. Edges of these termination structures are shaped and placed according to a 2nd-order smooth, non-circular analytic function so as to extend deeper into the die corner from the core region of the device than a constant-distance path. Also disclosed are electrically floating guard rings in the termination region, to inhibit triggering of parasitic p-n-p-n structures.

Abstract: A method and apparatus are disclosed for aligning an integrated circuit die (110) by use of a machine which directs a laser beam (32) downward on a wafer containing the die (110). Each die (110) is provided with one or more targets (52, 64, 78). A target (52) comprises an N+ region (56) within the target (52) and a layer of polysilicon (56) over an oxide layer (70). A laser beam (32) is scanned across the target (52) to detect a transition across an edge of a polysilicon layer (68). The transition is detected by the generation of charge carriers (36) within the region (34). The region (34) has an opposite conductivity type from that of the substrate (10) thus forming a PN junction. The PN junction is reversed biased by a voltage source (38) which is connected in series with a resistor (40) between the substrate (10) and the region (34). A center point is determined by calculating the midpoint between transitions. The establishment of a center of the target (52) establishes a reference point.

Abstract: A laser beam (38) is focused on the surface of a semiconductor substrate (10) by translating an objective lens (70) along the path of the laser beam (38). The substrate (10) is fabricated to have a region (12) of an opposite conductivity type and to have a barrier layer (18) to the laser beam (38). An opening (16) is provided in the barrier layer (18) to permit the laser beam (38) to strike the substrate (10). A voltage source (24) and resistance (26) are connected in series between the substrate (10) and the region (12) to form a reverse biased diode junction. When the laser beam (38) strikes the substrate (10) charge carriers (42) are generated to produce a current through the resistor (26). The current flow through the circuit is measured by a control circuit (84) which drives a mechanism (72, 74, 76, 78, 80) to position the objective lens (70) such that the focus point of the laser beam (38) is positioned at the surface of the substrate (10).