Abstract: Systems and methods for compressing data are described. One of the methods includes receiving a plurality of measurement signals from one or more sensors coupled to a radio frequency (RF) transmission path of a plasma tool. The RF transmission path is from an output of an RF generator to an electrode of a plasma chamber. The method includes converting the plurality of measurement signals from an analog form to a digital form to sample data and processing the data to reduce an amount of the data. The amount of the data is compressed to output compressed data. The method includes sending the compressed data to a controller for controlling the plasma tool.

Abstract: Systems and methods for compressing data are described. One of the methods includes receiving a plurality of measurement signals from one or more sensors coupled to a radio frequency (RF) transmission path of a plasma tool. The RF transmission path is from an output of an RF generator to an electrode of a plasma chamber. The method includes converting the plurality of measurement signals from an analog form to a digital form to sample data and processing the data to reduce an amount of the data. The amount of the data is compressed to output compressed data. The method includes sending the compressed data to a controller for controlling the plasma tool.

Abstract: Systems and methods for compressing data are described. One of the methods includes receiving a plurality of measurement signals from one or more sensors coupled to a radio frequency (RF) transmission path of a plasma tool. The RF transmission path is from an output of an RF generator to an electrode of a plasma chamber. The method includes converting the plurality of measurement signals from an analog form to a digital form to sample data and processing the data to reduce an amount of the data. The amount of the data is compressed to output compressed data. The method includes sending the compressed data to a controller for controlling the plasma tool.

Abstract: An iterative etch process includes a plurality of cycles performed in a successive manner on a substrate. Each cycle of the plurality of cycles includes a deposition phase and an activation phase. The deposition phase is performed before the activation phase in each cycle. The deposition phase is defined as a plasma-based process to enable removal of a particular material from a surface of the substrate. The activation phase is defined as a plasma-based process to remove the particular material from the surface of the substrate. One or more feedback control signals are acquired during the iterative etch process, correlated to a condition of the substrate, and analyzed to determine the condition of the substrate. One or more process parameters of the iterative etch process is/are adjusted based on the condition of the substrate as determined by analyzing the one or more feedback control signals.

Abstract: A RF control circuit is provided and includes a controller, a divider, and a RF sensor. The controller selects a RF, which is a frequency of a reference LO signal. The divider receives a first RF signal detected in a substrate processing chamber and outputs a second RF signal. The first RF signal is generated by a RF generator and supplied to the substrate processing chamber. The RF sensor includes a lock-in amplifier, which includes: a RF path that receives the second RF signal; a LO path that receives the reference LO signal; a first mixer that generates an IF signal based on the second RF signal and the reference LO signal; and a filter that filters the IF signal. The controller generates a control signal based on the filtered IF signal and transmits the control signal to the RF generator to adjust the first RF signal.

Abstract: A RF control circuit is provided and includes a controller, a divider, and a RF sensor. The controller selects a RF, which is a frequency of a reference LO signal. The divider receives a first RF signal detected in a substrate processing chamber and outputs a second RF signal. The first RF signal is generated by a RF generator and supplied to the substrate processing chamber. The RF sensor includes a lock-in amplifier, which includes: a RF path that receives the second RF signal; a LO path that receives the reference LO signal; a first mixer that generates an IF signal based on the second RF signal and the reference LO signal; and a filter that filters the IF signal. The controller generates a control signal based on the filtered IF signal and transmits the control signal to the RF generator to adjust the first RF signal.

Abstract: An iterative etch process includes a plurality of cycles performed in a successive manner on a substrate. Each cycle of the plurality of cycles includes a deposition phase and an activation phase. The deposition phase is performed before the activation phase in each cycle. The deposition phase is defined as a plasma-based process to enable removal of a particular material from a surface of the substrate. The activation phase is defined as a plasma-based process to remove the particular material from the surface of the substrate. One or more feedback control signals are acquired during the iterative etch process, correlated to a condition of the substrate, and analyzed to determine the condition of the substrate. One or more process parameters of the iterative etch process is/are adjusted based on the condition of the substrate as determined by analyzing the one or more feedback control signals.

Abstract: A communications system for synchronizing control signals between subsystems coupled to a process module used for processing a substrate. A distributed controller coupled to the subsystems is configured to initiate process steps, each step having a step period. A distributed clock module includes a master clock having a clock speed including clock cycles, each clock cycle having a duration that is pre-correlated to a feedback loop within which synchronized control signals are delivered to and received from the subsystems by the distributed clock module. A predefined number of clock cycles is assigned by the distributed clock module for performing a corresponding number of feedback loops for transitioning between process steps. The predefined number of clock cycles are restricted to a fraction of the step period.

Abstract: A communications system for synchronizing control signals between subsystems coupled to a process module used for processing a substrate. A distributed controller coupled to the subsystems is configured to initiate process steps, each step having a step period. A distributed clock module includes a master clock having a clock speed including clock cycles, each clock cycle having a duration that is pre-correlated to a feedback loop within which synchronized control signals are delivered to and received from the subsystems by the distributed clock module. A predefined number of clock cycles is assigned by the distributed clock module for performing a corresponding number of feedback loops for transitioning between process steps. The predefined number of clock cycles are restricted to a fraction of the step period.

Abstract: A device for use in a wafer processing chamber having a plasma forming volume and a hot edge ring. The hot edge ring has a first surface and a second surface. The first surface is in contact with the plasma forming volume. The second surface is not in contact with the plasma forming volume. The device includes a detector operable to contact the second surface of the hot edge ring. The detector can detect a parameter of the hot edge ring and can provide a detected signal based on the detected parameter.

Abstract: An arc detection system includes a radio frequency (RF) signal probe that senses a RF signal at an input of a RF plasma chamber and that generates a signal based on at least one of the voltage, current, and power of the RF signal. A signal analyzer receives the signal, monitors the signal for frequency components that have a frequency greater than or equal to a fundamental frequency of the RF signal, and generates an output signal based on the frequency components. The output signal indicates that an arc is occurring in the RF plasma chamber.

Abstract: A method of using a processing system that is operable to deposit liquid and to remove liquid by way of negative pressure. The method includes arranging a device to have at least one of the liquid deposited thereon by the processing system and the liquid removed therefrom by the processing system. The device has a sensor portion disposed thereon. The sensor portion can provide a sensor signal based on pressure related to the at least one of the liquid being deposited thereon by the processing system and the liquid being removed therefrom by the processing system. The method further includes performing at least one of depositing, by the processing system, the liquid onto the device and removing the liquid, by the processing system, from the device. The method still further includes providing the sensor signal, by the sensor portion, based on the pressure related to the at least one of the liquid being deposited onto the device and the liquid being removed from the device.

Abstract: In various exemplary embodiments described herein, a system and associated method relate to non-destructive signal propagation to detect one or more defects in a substrate. The system can be built into a semiconductor process tool such as a substrate handling mechanism. The system comprises a transducer configured to convert one or more frequencies from an electrical signal into at least one mechanical pulse. The mechanical pulse is coupled to the substrate through the substrate handling mechanism. A plurality of sensors is positioned distal to the transducer and configured to be coupled, acoustically or mechanically, to the substrate. The plurality of distal sensors is further configured to detect both the mechanical pulse and any distortions to the pulse. A signal analyzer is coupled to the plurality of distal sensors to compare the detected pulse and any distortions to the pulse with a baseline response.

Abstract: A method of using a processing system that is operable to deposit liquid and to remove liquid by way of negative pressure. The method includes arranging a device to have at least one of the liquid deposited thereon by the processing system and the liquid removed therefrom by the processing system. The device has a sensor portion disposed thereon. The sensor portion can provide a sensor signal based on pressure related to the at least one of the liquid being deposited thereon by the processing system and the liquid being removed therefrom by the processing system. The method further includes performing at least one of depositing, by the processing system, the liquid onto the device and removing the liquid, by the processing system, from the device. The method still further includes providing the sensor signal, by the sensor portion, based on the pressure related to the at least one of the liquid being deposited onto the device and the liquid being removed from the device.

Abstract: A method of using a processing system that is operable to deposit liquid and to remove liquid by way of negative pressure. The method includes arranging a device to have at least one of the liquid deposited thereon by the processing system and the liquid removed therefrom by the processing system. The device has a sensor portion disposed thereon. The sensor portion can provide a sensor signal based on pressure related to the at least one of the liquid being deposited thereon by the processing system and the liquid being removed therefrom by the processing system. The method further includes performing at least one of depositing, by the processing system, the liquid onto the device and removing the liquid, by the processing system, from the device. The method still further includes providing the sensor signal, by the sensor portion, based on the pressure related to the at least one of the liquid being deposited onto the device and the liquid being removed from the device.

Abstract: An aspect of the present invention provides a system and method for controlling a wafer cleaning system having a wafer carrier and a driving portion. The wafer carrier can move along a path in a first direction and a second direction. The driving portion can controllably move the wafer carrier in the first direction and the second direction. The control system includes a vibration sensor portion and a wafer carrier position controller. The vibration sensor portion can detect vibration of the wafer carrier and can output a vibration signal based on the detected vibration. The wafer carrier position controller can instruct the driving portion to modify motion of the wafer carrier based on the vibration signal to reduce the detected vibration.

Abstract: A device for use in a wafer processing chamber having a plasma forming volume and a hot edge ring. The hot edge ring has a first surface and a second surface. The first surface is in contact with the plasma forming volume. The second surface is not in contact with the plasma forming volume. The device includes a detector operable to contact the second surface of the hot edge ring. The detector can detect a parameter of the hot edge ring and can provide a detected signal based on the detected parameter.

Abstract: In various exemplary embodiments described herein, a system and associated method relate to non-destructive signal propagation to detect one or more defects in a substrate. The system can be built into a semiconductor process tool such as a substrate handling mechanism. The system comprises a transducer configured to convert one or more frequencies from an electrical signal into at least one mechanical pulse. The mechanical pulse is coupled to the substrate through the substrate handling mechanism. A plurality of sensors is positioned distal to the transducer and configured to be coupled, acoustically or mechanically, to the substrate. The plurality of distal sensors is further configured to detect both the mechanical pulse and any distortions to the pulse. A signal analyzer is coupled to the plurality of distal sensors to compare the detected pulse and any distortions to the pulse with a baseline response.

Abstract: An arc detection system includes a radio frequency (RF) signal probe that senses a RF signal at an input of a RF plasma chamber and that generates a signal based on at least one of the voltage, current, and power of the RF signal. A signal analyzer receives the signal, monitors the signal for frequency components that have a frequency greater than or equal to a fundamental frequency of the RF signal, and generates an output signal based on the frequency components. The output signal indicates that an arc is occurring in the RF plasma chamber.

Abstract: An arc detection system includes a radio frequency (RF) signal probe that senses a RF signal at an input of a RF plasma chamber and that generates a signal based on at least one of the voltage, current, and power of the RF signal. A signal analyzer receives the signal, monitors the signal for frequency components that have a frequency greater than or equal to a fundamental frequency of the RF signal, and generates an output signal based on the frequency components. The output signal indicates that an arc is occurring in the RF plasma chamber.