Abstract: A porous substrate curtain coated with a single coating of a liquid dielectric that is cured into a well adhering film at least 15 microns thick with a uniformity of less than 5 microns. The substrate is cleaned to remove contaminants, heated to remove moisture, curtain coated with a single coating of a viscous heat curable liquid dielectric such as polyimide, and heated to cure the dielectric by increasing the temperature at most 15.degree. C. per minute to a predetermined cure temperature not exceeding 450.degree. C. The invention is well suited for fabricating a dielectric layer in a high density multichip module.

Abstract: A defective metallization layer is removed from the top of an electronic component such as an integrated circuit or a copper/polyimide substrate by polishing with a rotating pad and a slurry. Non-defective underlying metallization layers are preserved and a new metallization layer is fabricated to replace the defective layer.

Abstract: A method for fabricating metal pillars in an electronic component. The method includes providing a base with spaced vias in a top surface, depositing an electrically conductive metal into the vias and over the top surface of the base so that a metal layer with an uneven top surface forms over the base, and planarizing the metal by polishing. The polishing can remove the entire metal layer leaving metal pillars in and aligned with the base. Or the polishing can be completed before removing the metal layer and metal above the base between the vias can be etched to form metal pillars with uniform heights which extend above the base. The invention is well suited for fabricating high-density multilayer copper/polyimide electrical interconnects.

Abstract: A method of reworking an electrical multilayer interconnect in which the electrical lines can be protected by an overcoat. The method includes removing a defective metallization layer from the top of an interconnect substrate, depositing an electrically conductive layer on the substrate, forming a base plating mask on the electrically conductive layer, plating a copper base into an opening in the base plating mask onto the electrically conductive layer, stripping the base plating mask, forming a pillar plating mask on top of the copper base, plating an electrically conductive metal pillar into an opening in the pillar plating mask onto the top of the copper base, stripping the plating mask, and stripping the electrically conductive layer below the stripped base plating mask. Additionally, a protective overcoat layer can be deposited on the exposed copper surfaces.