Abstract: The specification discloses a mobile transparent window apparatus and method for use in a photochemical vapor deposition system having a reaction chamber with a quartz window integral with the top surface thereof, which prevents undesirable deposits on the quartz window and thereby enhances the efficiency and rate of the deposition process. The apparatus comprises: (a) a film of a predetermined material that is drawn across the internal face of the quartz window within the reaction chamber, the predetermined material being characterized by being transparent to a selected wavelength of radiation, being stable at the elevated temperature required for the photochemical vapor deposition, and possessing sufficient mechanical strength to be moved across the quartz window; and (b) means for moving the film across the internal face of the quartz window.

Abstract: Low temperature photonitride (LTPN) films of excellent quality have been prepared at temperatures ranging from 300.degree. C. downward to 100.degree. C. by a photochemical vapor deposition process, wherein a mixture of silane, ammonia, and hydrazine is caused to react to form Si.sub.3 N.sub.4 films at the substrate interface. These films are suitable for the preparation of silicon nitride passivation layers on solid-state devices, such as metal-oxide semiconductors (MOS) and charge coupled devices to impart enhanced reliability.