Patents by Inventor John W. Sherohman

John W. Sherohman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications
    Patent number: 8883548
    Abstract: Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.
    Type: Grant
    Filed: October 24, 2011
    Date of Patent: November 11, 2014
    Assignee: Lawrence Livermore National Security, LLC
    Inventors: John W. Sherohman, Jick Hong Yee, Arthur W. Combs, III
  • DEVELOPMENT OF AN ELECTRONIC DEVICE QUALITY ALUMINUM ANTIMONIDE (AlSb) SEMICONDUCTOR FOR SOLAR CELL APPLICATIONS
    Publication number: 20120058595
    Abstract: Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.
    Type: Application
    Filed: October 24, 2011
    Publication date: March 8, 2012
    Inventors: John W. Sherohman, Jick Hong Yee, Arthur W. Combs, III
  • High resistivity aluminum antimonide radiation detector
    Patent number: 7309393
    Abstract: Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.
    Type: Grant
    Filed: January 21, 2005
    Date of Patent: December 18, 2007
    Assignee: Lawrence Livermore National Security, LLC
    Inventors: John W. Sherohman, Arthur W. Coombs, III, Jick H. Yee
  • Design and fabrication of 6.1-? family semiconductor devices using semi-insulating A1Sb substrate
    Patent number: 7224041
    Abstract: For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-? family heterostructure devices.
    Type: Grant
    Filed: May 28, 2004
    Date of Patent: May 29, 2007
    Assignee: The Regents of the University of California
    Inventors: John W. Sherohman, Arthur W. Coombs, III, Jick Hong Yee, Kuang Jen J. Wu
  • High resistivity aluminum antimonide radiation detector
    Patent number: 6887441
    Abstract: Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.
    Type: Grant
    Filed: September 30, 2002
    Date of Patent: May 3, 2005
    Assignee: The Regents of the University of California
    Inventors: John W. Sherohman, Arthur W. Coombs, III, Jick H. Yee
  • High resistivity aluminum antimonide radiation detector
    Publication number: 20040061063
    Abstract: Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.
    Type: Application
    Filed: September 30, 2002
    Publication date: April 1, 2004
    Applicant: The Regents of the University of California
    Inventors: John W. Sherohman, Arthur W. Coombs, Jick H. Yee