Patents by Inventor John Walter Locher
John Walter Locher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180223446Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.Type: ApplicationFiled: March 29, 2018Publication date: August 9, 2018Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, JR., Herbert Ellsworth Bates
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Patent number: 9963800Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.Type: GrantFiled: September 18, 2017Date of Patent: May 8, 2018Assignee: SAINT-GOBAIN CERAMICS & PLASTICS, INC.Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, Jr., Herbert Ellsworth Bates
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Patent number: 9926645Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.Type: GrantFiled: April 17, 2017Date of Patent: March 27, 2018Assignee: SAINT-GOBAIN CERAMICS & PLASTICS, INC.Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, Jr., Herbert Ellsworth Bates
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Publication number: 20180016704Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.Type: ApplicationFiled: September 18, 2017Publication date: January 18, 2018Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, JR., Herbert Ellsworth Bates
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Publication number: 20170342591Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.Type: ApplicationFiled: April 17, 2017Publication date: November 30, 2017Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, JR., Herbert Ellsworth Bates
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Publication number: 20170183792Abstract: An apparatus for production of single crystal sapphire is disclosed. The apparatus can include a die and an insulated chimney mounted above the die. The die can be in a first active heat zone. The chimney can include a second heat zone. The apparatus may be used in edge defined film-fed growth techniques for the production of single crystal material exhibiting an absence of lineage.Type: ApplicationFiled: August 2, 2016Publication date: June 29, 2017Inventors: Guilford L. Mack, III, Christopher D. Jones, Fery Pranadi, John Walter Locher, Steven Anthony Zanella, Herbert Ellsworth Bates
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Patent number: 9551089Abstract: The present disclosure is directed to an apparatus and method for growing a sapphire sheet via edge-defined film-fed growth (EFG) including an angled heat shield with respect to the a side surface of a die tip. The present disclosure is further directed to an sapphire sheets and batches of such sheets having features such as a particular maximum low spot thickness.Type: GrantFiled: March 14, 2014Date of Patent: January 24, 2017Assignee: SAINT-GOBAIN CERAMICS & PLASTICS, INC.Inventors: Marc Ouellette, Joseph M. Collins, John Walter Locher, Guilford L. Mack, III, Abbie M. Jennings, Jan J. Buzniak, Christopher D. Jones
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Publication number: 20140311402Abstract: The present disclosure is directed to an apparatus and method for growing a sapphire sheet via edge-defined film-fed growth (EFG) including an angled heat shield with respect to the a side surface of a die tip. The present disclosure is further directed to an sapphire sheets and batches of such sheets having features such as a particular maximum low spot thickness.Type: ApplicationFiled: March 14, 2014Publication date: October 23, 2014Applicant: Saint-Gobain Ceramics & Plastics, Inc.Inventors: Marc Ouellette, Joseph M. Collins, John Walter Locher, Guilford L. Mack, III, Abbie M. Jennings, Jan J. Buzniak, Christopher D. Jones
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Publication number: 20140272413Abstract: The present disclosure is directed to an apparatus and method for forming sapphire ribbons via Edge-Defined Film-Fed Growth (EFG). Further, the present disclosure is directed to a plurality of concurrently grown sapphire ribbons having features such as a low dimensional variability and elimination of voiding between the sapphire ribbons concurrently grown in a batch.Type: ApplicationFiled: March 14, 2014Publication date: September 18, 2014Applicant: Saint-Gobain Ceramics & Plastics, Inc.Inventors: Marc Ouellette, Joseph M. Collins, John Walter Locher, Guilford L. Mack, III, Abbie M. Jennings, Jan J. Buzniak, Christopher D. Jones
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Publication number: 20140150716Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.Type: ApplicationFiled: February 10, 2014Publication date: June 5, 2014Inventors: John Walter Locher, Stephen Anthony Zanella, Ralph Lampson MacLean, JR., Herbert Ellsworth Bates
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Publication number: 20140116323Abstract: A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.Type: ApplicationFiled: January 6, 2014Publication date: May 1, 2014Applicant: Saint-Gobain Ceramics & Plastics, Inc.Inventors: Vitali Tatartchenko, Christopher D. Jones, Stephen Anthony Zanella, John Walter Locher, Fery Pranadi
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Publication number: 20140017479Abstract: A method and apparatus for the production of r-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting an absence of lineage.Type: ApplicationFiled: September 19, 2013Publication date: January 16, 2014Inventors: Guilford L. Mack, III, Christopher D. Jones, Fery Pranadi, John Walter Locher, Steven Anthony Zanella, Herbert Ellsworth Bates
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Publication number: 20120145069Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.Type: ApplicationFiled: February 14, 2012Publication date: June 14, 2012Applicant: SAINT-GOBAIN CERAMICS & PLASTICS, INC.Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, JR., Herbert Ellsworth Bates
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Publication number: 20100282160Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.Type: ApplicationFiled: January 29, 2008Publication date: November 11, 2010Applicant: SAINT-GOBAIN CERAMICS & PLASTICS, INC.Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, JR., Herbert Ellsworth Bates
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Patent number: 7348076Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.Type: GrantFiled: April 8, 2004Date of Patent: March 25, 2008Assignee: Saint-Gobain Ceramics & Plastics, Inc.Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, Jr., Herbert Ellsworth Bates
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Patent number: RE43469Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.Type: GrantFiled: October 21, 2009Date of Patent: June 12, 2012Assignee: Saint-Gobain Ceramics & Plastics, Inc.Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, Herbert Ellsworth Bates