Abstract: A method and apparatus for more efficiently depositing a gas onto a surface. In one embodiment, a deposition apparatus is provided. The deposition apparatus comprises a deposition chamber, a tube and a heating element. The tube is in fluid communication with the deposition chamber, and the heating element is constructed and arranged so that the heating element preferentially heats the centerline of the tube relative to the inner surface of the tube. In another embodiment, a method of depositing a product gas onto a surface is provided. The method comprises placing a first gas into a tube; heating first and second portions of the first gas to first and second temperatures, respectively, to form the product gas, the first portion of the first gas being adjacent the centerline of the tube, the second portion of the first gas being adjacent the inner surface of the tube, the first temperature being greater than the second temperature; and depositing the product gas onto the surface.

Abstract: Multi-level structures including a first layer with a parylene polymer layer deposited thereon. The parylene polymer layer has the structure: ##STR1## m is an integer having a value of 0, 1, 2, 3 or 4, and z is greater than 1. G is a halogen, an alkyl group, a cyclo hydrocarbon, an alkylene group or an alkylyne group having the general formula C.sub.n H.sub.y X.sub.w. X is a halogen, and n is an integer greater than zero. The sum of y and w is at most equal to a 2n+1. The parylene polymer layer can have a zinc impurity level of about 66 parts per billion or less. The parylene polymer layers are formed by a process in which monomers are formed outside of a deposition zone of a vacuum chamber. The monomers may be prepared by a process in which a parylene dimer is vaporized and subsequently pyrolized. The process may further include the step of passing the vapor through a post-pyrolysis zone prior to depositing the monomer on the substrate.

Abstract: A method and apparatus for depositing parylene monomer within the interior of a deposition chamber of a parylene deposition system. In certain embodiments, the method comprises the steps of: (a) introducing a cryogenic fluid into the interior of the deposition chamber to cool the surface of the substrate; and (b) introducing the parylene monomer into the interior of the chamber to deposit the parylene monomer onto the surface of the substrate. In some embodiments, the apparatus comprises: a deposition chamber; a pumping system, a source of cryogenic fluid, a gas source and at least one support mount disposed within the interior of the deposition chamber. The pumping system reduces the pressure of the interior of the deposition chamber, and the pumping system is in fluid communication with the interior of the deposition chamber. The source of cryogenic fluid is in fluid communication with the interior of the deposition chamber.

Abstract: Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes a heated and cooled dimer receptacle for fast and efficient vaporization of parylene dimer material.

Abstract: Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes an oilless, dry vacuum pump connected rierctly to the deposition chamber, and a liquid nitrogen cooled cold trap connected to the outlet of the vacuum pump. The apparatus further includes a vacuum by-pass assembly wherein a high-conductance vacuum outlet is utilized to quickly reduce pressure in the chamber system and a low-conductance vacuum manifold outlet is utilized to maintain vacuum flow during the deposition procedure.

Abstract: Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. A method of depositing parylene AF4 onto the surface of a semiconductor wafer includes cooling the semiconductor chip wafer to a temperature below 0.degree. C., creating an inert atmosphere around the apparatus, creating sub-atmospheric pressure conditions around the wafer while maintaining the inert external atmosphere, and depositing a predetermined thickness of the parylene AF4 polymer onto the wafer. The method further includes the steps of heating the wafer back to room temperature prior to removing the wafer from the sub-atmospheric conditions, and may still further include the steps of further heating the wafer to a predetermined annealing temperature, and the cooling the wafer back to room temperature prior to removing the wafer from the sub-atmospheric conditions.

Abstract: Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes a heated and cooled platen for supporting the wafer in the deposition chamber and for controlling the temperature of the wafer during deposition procedures, and further includes an electrostatic clamping device for clamping the wafer in intimate thermal contact with the platen.

Abstract: Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes a post-pyrolysis chamber maintained at a predetermined temperature for capturing unpyrolyzed dimer before entry into the deposition chamber, and a filter structure positioned at the deposition chamber inlet to filter out microscopic particles and impurities prior to deposition onto the wafer surface. The post-pyrolysis chamber includes baffles for capturing the unpyrolyzed dimer, and the filter material preferably comprises PTFE. The filter element is heated to prevent deposition onto the filter.

Abstract: A parylene deposition apparatus includes a quartz crystal thickness/rate controller for controlling the deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The crystal is located within the deposition chamber to receive a coating of parylene consistent with that of the substrate being coated. The vaporization chamber of the apparatus includes a heat transfer receptacle for receiving parylene dimer to be vaporized. The heat transfer receptacle includes heating and cooling devices to control the temperature thereof. In operation, parylene monomer deposits onto the surface of the crystal during deposition thereby varying the vibration frequency of the crystal. The rate of change in frequency can be directly correlated with the rate of monomer deposition.

Abstract: Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes an atmospheric shroud which envelopes the entire apparatus, and further includes an inert gas source for providing an inert atmosphere within the shroud. The purpose of the shroud and inert atmosphere is to exclude oxygen from the deposition chamber during vacuum evacuation and the subsequent coating cycle, thus allowing the coating process to be carried out in a substantially oxygen free environment.

Abstract: A parylene deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes a frusto-conical shaped deposition chamber which minimizes deposition chamber volume and maximizes flow of vapor over the surface of the wafer, and a vacuum by-pass assembly wherein a high-conductance vacuum outlet is utilized to quickly reduce pressure in the vacuum chamber system and a low-conductance vacuum manifold outlet is utilized to maintain vacuum flow during the deposition procedure.

Abstract: A method of constructing a thin electroluminescent lamp assembly comprising forming a UV curable dielectric matrix by loading nonencapsulated particles of electroluminescent phosphor into a UV curable dielectric composition, depositing a coating of such composition over the surface of a transparent conductor, curing such composition by exposure to ultraviolet light in a substantially inert atmosphere, interposing a coating of a silver conductive material in the form of a band about the periphery of the transparent conductor to form an electrical bus bar with the band having an elongated section of the same composition extending therefrom to form a first electrical lead, curing said band and electrical lead, superimposing a conductive coating over the surface of the UV curable dielectric composition with the conductive coating having an elongated section extending therefrom to form a second electrical lead laterally spaced apart from the first electrical lead, curing the conductive coating and second electrica