Patents by Inventor John Wasserbauer

John Wasserbauer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10773097
    Abstract: The present invention relates to a light therapy device article of manufacture, system and method for providing light is delivered to the skin by means of one or more optical fibers in therapeutic dosages from light source in wavelengths of 614-624 nm, 668-684 nm, 751-772 nm, and 813-846 nm. The light source may be comprised from one or more light emitting diodes LED disposed on a flexible printed circuit board (PCB) and ferrule adapter assembly configured to deliver light to the skin directly of the patient from the light source disposed on the PCB adjacent a scalp surface. A control circuit operably connected to the PCB is adapted to provide energy to one or more zones of LEDs to address hair loss treatment regimen including splotchy balding, receding hairline balding, crown balding and total scalp surface therapy.
    Type: Grant
    Filed: November 12, 2019
    Date of Patent: September 15, 2020
    Assignee: Hair Group, LLC
    Inventors: John Wasserbauer, Sara Wasserbauer, Erik Carlson
  • Publication number: 20200222715
    Abstract: The present invention relates to a light therapy device article of manufacture, system and method for providing light is delivered to the skin by means of one or more optical fibers in therapeutic dosages from light source in wavelengths of 614-624 nm, 668-684 nm, 751-772 nm, and 813-846 nm. The light source may be comprised from one or more light emitting diodes LED disposed on a flexible printed circuit board (PCB) and ferrule adapter assembly configured to deliver light to the skin directly of the patient from the light source disposed on the PCB adjacent a scalp surface. A control circuit operably connected to the PCB is adapted to provide energy to one or more zones of LEDs to address hair loss treatment regimen including splotchy balding, receding hairline balding, crown balding and total scalp surface therapy.
    Type: Application
    Filed: November 12, 2019
    Publication date: July 16, 2020
    Applicant: Hair Group, LLC
    Inventors: John WASSERBAUER, Sara WASSERBAUER, Erik CARLSON
  • Patent number: 10525278
    Abstract: The present invention relates to a light therapy device article of manufacture, system and method for providing light is delivered to the skin by means of one or more optical fibers in therapeutic dosages from light source in wavelengths of 614-624 nm, 668-684 nm, 751-772 nm, and 813-846 nm. The light source may be comprised from one or more light emitting diodes LED disposed on a flexible printed circuit board (PCB) and ferrule adapter assembly configured to deliver light to the skin directly of the patient from the light source disposed on the PCB adjacent a scalp surface. A control circuit operably connected to the PCB is adapted to provide energy to one or more zones of LEDs to address hair loss treatment regimen including splotchy balding, receding hairline balding, crown balding and total scalp surface therapy.
    Type: Grant
    Filed: August 15, 2017
    Date of Patent: January 7, 2020
    Assignee: Hair Group, LLC
    Inventors: John Wasserbauer, Sara Wasserbauer, Erik Carlson
  • Publication number: 20190054311
    Abstract: The present invention relates to a light therapy device article of manufacture, system and method for providing light is delivered to the skin by means of one or more optical fibers in therapeutic dosages from light source in wavelengths of 614-624 nm, 668-684 nm, 751-772 nm, and 813-846 nm. The light source may be comprised from one or more light emitting diodes LED disposed on a flexible printed circuit board (PCB) and ferrule adapter assembly configured to deliver light to the skin directly of the patient from the light source disposed on the PCB adjacent a scalp surface. A control circuit operably connected to the PCB is adapted to provide energy to one or more zones of LEDs to address hair loss treatment regimen including splotchy balding, receding hairline balding, crown balding and total scalp surface therapy.
    Type: Application
    Filed: August 15, 2017
    Publication date: February 21, 2019
    Applicant: Hair Group, LLC
    Inventors: John WASSERBAUER, Sara WASSERBAUER, Erik CARLSON
  • Publication number: 20160062039
    Abstract: One aspect of the invention provides a mode size converter having a first end and a second end. The mode size converter includes: a silicon waveguide having an inverse taper from the first end; and a silicon nitride waveguide having an inverse taper relative to the first end. The silicon nitride waveguide is adjacent and substantially parallel to the silicon waveguide. Another aspect of the invention provides an optical assembly including: a mode size converter as described herein; and a fiber optic optically coupled to the silicon nitride waveguide at the second end of the mode size converter.
    Type: Application
    Filed: September 2, 2014
    Publication date: March 3, 2016
    Inventors: Haipeng Zhang, Jibin Sun, John Wasserbauer, Sandeep Razdan, Mark Ostasiuk, Nicola Pugliano
  • Patent number: 8945966
    Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: February 3, 2015
    Assignee: Element Six Technologies US Corporation
    Inventors: Daniel Francis, Felix Ejeckam, John Wasserbauer, Dubravko Babic
  • Publication number: 20130183798
    Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
    Type: Application
    Filed: September 10, 2012
    Publication date: July 18, 2013
    Inventors: Daniel Francis, Felix Ejeckam, John Wasserbauer, Dubravko Babic
  • Patent number: 8283189
    Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
    Type: Grant
    Filed: September 29, 2009
    Date of Patent: October 9, 2012
    Assignee: Group4 Labs, Inc.
    Inventors: Daniel Francis, Felix Ejeckam, John Wasserbauer, Dubravko Babic
  • Patent number: 8283672
    Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
    Type: Grant
    Filed: June 12, 2009
    Date of Patent: October 9, 2012
    Assignee: Group4 Labs, Inc.
    Inventors: Daniel Francis, Felix Ejeckam, John Wasserbauer, Dubravko Babic
  • Patent number: 7943485
    Abstract: Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.
    Type: Grant
    Filed: January 22, 2008
    Date of Patent: May 17, 2011
    Assignee: Group4 Labs, LLC
    Inventors: Daniel Francis, Felix Ejeckam, John Wasserbauer, Firooz Faili, Dubravko Babic
  • Publication number: 20100105166
    Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
    Type: Application
    Filed: September 29, 2009
    Publication date: April 29, 2010
    Applicant: Group4 Labs, LLC
    Inventors: Daniel Francis, Felix Ejeckam, John Wasserbauer, Dubravko Babic
  • Publication number: 20100001293
    Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
    Type: Application
    Filed: June 12, 2009
    Publication date: January 7, 2010
    Applicant: Group4 Labs, LLC
    Inventors: Daniel Francis, Felix Ejeckam, John Wasserbauer, Dubravko Babic
  • Patent number: 7595507
    Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
    Type: Grant
    Filed: April 12, 2006
    Date of Patent: September 29, 2009
    Assignee: Group4 Labs LLC
    Inventors: Daniel Francis, Felix Ejeckam, John Wasserbauer, Dubravko Babic
  • Publication number: 20080296586
    Abstract: Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.
    Type: Application
    Filed: January 22, 2008
    Publication date: December 4, 2008
    Inventors: Daniel Francis, Felix Ejeckam, John Wasserbauer, Firooz Faili, Dubravko Babic
  • Publication number: 20060266280
    Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
    Type: Application
    Filed: April 12, 2006
    Publication date: November 30, 2006
    Inventors: Daniel Francis, Felix Ejeckam, John Wasserbauer, Dubravko Babic
  • Patent number: 7138284
    Abstract: A method and apparatus for burning in a semiconductor wafer having a plurality of active devices utilizes temporary conductive interconnect layers to separately couple at least a portion of the anodes of the active devices together as well as at least a portion of the cathodes of the devices together. A simplified probed pad, having a reduced number of contacts may then be utilized to apply a substantially constant voltage or current to the devices. The temporary conductive interconnect layer may be patterned to include device level resistors or array level resistors that may be used to mitigate the effects of short circuits or open circuits on the processing of the devices.
    Type: Grant
    Filed: August 26, 2004
    Date of Patent: November 21, 2006
    Assignee: Optical Communication Products, Inc.
    Inventors: John Wasserbauer, Stewart A. Feld
  • Publication number: 20060176544
    Abstract: A folded cavity semiconductor optical amplifier is provided that includes a first mirror disposed on a substrate of semiconductor material and an active region formed thereon consisting of an optical cavity with a gain medium. The optical cavity being disposed adjacent the first mirror. A second mirror is formed and disposed on the active region on a surface opposite the first mirror. The active region of the amplifier includes input and output portions formed in one or both mirrors. The input and output portions formed from layers of reduced reflectivity relative to the first or second mirror and a longitudinal waveguide connecting the input and output portions to allow for light to be amplified to enter at the input port, travel through the vertical cavity and longitudinal waveguide, and exit as amplified light at the output portion of the waveguide structure.
    Type: Application
    Filed: March 22, 2006
    Publication date: August 10, 2006
    Inventor: John Wasserbauer
  • Publication number: 20050100063
    Abstract: An exemplary embodiment of the present invention integrates an absorbing layer into the emitting mirror of a VCSEL to reduce the reflectivity of the emitting mirror as seen by the feedback optical wave. The absorbing layer may be made of a suitable semiconductor material, such as a GaAs layer in a laser emitting near 850 nm or highly doped p-layer, and may disposed epitaxially in a semiconductor or metamorphic mirror. Alternatively, a metal layer may be disposed in the dielectric portion of a hybrid mirror or all-dielectric mirror.
    Type: Application
    Filed: November 17, 2004
    Publication date: May 12, 2005
    Applicant: Optical Communication Products, Inc.
    Inventors: John Wasserbauer, Jeffrey Scott
  • Patent number: 6882673
    Abstract: An exemplary embodiment of the present invention integrates an absorbing layer into the emitting mirror of a VCSEL to reduce the reflectivity of the emitting mirror as seen by the feedback optical wave. The absorbing layer may be made of a suitable semiconductor material, such as a GaAs layer in a laser emitting near 850 nm or highly doped p-layer, and may disposed epitaxially in a semiconductor or metamorphic mirror. Alternatively, a metal layer may be disposed in the dielectric portion of a hybrid mirror or all-dielectric mirror.
    Type: Grant
    Filed: January 15, 2002
    Date of Patent: April 19, 2005
    Assignee: Optical Communication Products, Inc.
    Inventors: John Wasserbauer, Jeffrey W. Scott
  • Patent number: 6879612
    Abstract: A temperature insensitive vertical cavity laser includes an active region, having a plurality of quantum wells, formed between first and second mirrors. The gain of each of said quantum wells or groups of quantum wells operate quasi-independently at different temperatures such that stimulated emission is dominated by a different quantum well or group of quantum wells at different temperatures.
    Type: Grant
    Filed: January 23, 2002
    Date of Patent: April 12, 2005
    Assignee: Optical Communication Products, Inc.
    Inventor: John Wasserbauer