Abstract: A variable transmission element includes a first substrate that has a first surface and a second surface opposite the first surface. A second substrate includes a third surface and a fourth surface opposite the third surface. The first and second surfaces face each other and are disposed in a spaced apart relationship so as to define a space therebetween. A seal formed of a sealing material extends along a perimeter of the first and second substrates. A first lamination layer comprises a first lamination material that is different from the sealing material and the first lamination layer is coupled to the second surface. A second lamination layer comprises a second lamination material that is different from the sealing material and the second lamination layer is coupled to the second substrate. An electro-optic device is disposed between the first lamination layer and the second lamination layer.

Abstract: Methods of inducing or increasing lipid and protein production in microalgae are disclosed. Methods of enhancing microalgae biomass are also disclosed. The methods may comprise inoculating a culture media with microalgae and propagating the microalgae under heterotrophic growth conditions. The heterotrophic growth conditions may comprise inhibiting exposure of the inoculated culture media to light. The methods may further comprise delivering oxygen into the inoculated culture media. Additionally, lipids, proteins, and other cellular components may be isolated and purified from microalgae cultivated under the disclosed methods.

Abstract: Methods of inducing or increasing lipid and protein production in microalgae are disclosed. Methods of enhancing microalgae biomass are also disclosed. The methods may comprise inoculating a culture media with microalgae and propagating the microalgae under heterotrophic growth conditions. The heterotrophic growth conditions may comprise inhibiting exposure of the inoculated culture media to light. The methods may further comprise delivering oxygen into the inoculated culture media. Additionally, lipids, proteins, and other cellular components may be isolated and purified from microalgae cultivated under the disclosed methods.

Abstract: Methods of inducing or increasing lipid and protein production in microalgae are disclosed. Methods of enhancing microalgae biomass are also disclosed. The methods may comprise inoculating a culture media with microalgae and propagating the microalgae under heterotrophic growth conditions. The heterotrophic growth conditions may comprise inhibiting exposure of the inoculated culture media to light. The methods may further comprise delivering oxygen into the inoculated culture media. Additionally, lipids, proteins, and other cellular components may be isolated and purified from microalgae cultivated under the disclosed methods.

Abstract: Methods of inducing or increasing lipid and protein production in microalgae are disclosed. Methods of enhancing microalgae biomass are also disclosed. The methods may comprise inoculating a culture media with microalgae and propagating the microalgae under heterotrophic growth conditions. The heterotrophic growth conditions may comprise inhibiting exposure of the inoculated culture media to light. The methods may further comprise delivering oxygen into the inoculated culture media. Additionally, lipids, proteins, and other cellular components may be isolated and purified from microalgae cultivated under the disclosed methods.

Abstract: Methods of inducing or increasing lipid and protein production in microalgae are disclosed. Methods of enhancing microalgae biomass are also disclosed. The methods may comprise inoculating a culture media with microalgae and propagating the microalgae under heterotrophic growth conditions. The heterotrophic growth conditions may comprise inhibiting exposure of the inoculated culture media to light. The methods may further comprise delivering oxygen into the inoculated culture media. Additionally, lipids, proteins, and other cellular components may be isolated and purified from microalgae cultivated under the disclosed methods.

Abstract: A method for spinning a material onto a semiconductor device structure so as to substantially fill recesses formed in a surface of the semiconductor device structure and to impart the material with a substantially planar surface and semiconductor device structures formed thereby. The thickness of the material covering the surface is less than the depth of the recesses. The surface may remain substantially uncovered by the material.

Abstract: Methods for partially or substantially filling recesses (e.g., capacitor containers, shallow trenches for formation of shallow trench isolation (STI) structures, etc.) That communicate with a surface of the semiconductor device structure include applying material to a surface of the semiconductor device structure and spreading the material. The thickness of the material covering the surface may be less than (e.g., about half of or less than half of) the depths of the recesses. The surface may remain substantially uncovered by the material.

Abstract: A method for fabricating a semiconductor device structure includes applying a stress buffer material onto a semiconductor device structure and spreading the stress buffer material. When the stress buffer material is spread, it substantially fills recesses formed in a surface of the semiconductor device structure and imparts the stress buffer material with a substantially planar surface. The thickness of the stress buffer material covering the surface of the semiconductor device structure may be less than the depths of the recesses. The surface may remain substantially uncovered by the material.

Abstract: A method for spinning a material onto a semiconductor device structure so as to substantially fill recesses formed in a surface of the semiconductor device structure and to impart the material with a substantially planar surface and semiconductor device structures formed thereby. The thickness of the material covering the surface is less than the depth of the recesses. The surface may remain substantially uncovered by the material.

Abstract: A method and apparatus is provided for more efficient application of photoresist to a wafer surface. One aspect of the method comprises applying solvent to the wafer and spinning it to coat the entire wafer surface prior to the application of photoresist. This reduces surface tension on the wafer and reduces the amount of resist required to achieve a high quality film. The apparatus comprises adding a third solenoid and nozzle to the coating unit to accommodate the application of solvent to the center of the wafer surface. The method also describes incorporating a new solvent comprising diacetone alcohol, which is a low-pressure solvent, providing extended process latitudes and reduced material expenditures.

Abstract: A method and apparatus is provided for more efficient application of photoresist to a wafer surface. One aspect of the method comprises applying solvent to the wafer and spinning it to coat the entire wafer surface prior to the application of photoresist. This reduces surface tension on the wafer and reduces the amount of resist required to achieve a high quality film. The apparatus comprises adding a third solenoid and nozzle to the coating unit to accommodate the application of solvent to the center of the wafer surface. The method also describes incorporating a new solvent comprising diacetone alcohol, which is a low-pressure solvent, providing extended process latitudes and reduced material expenditures.

Abstract: A method and apparatus is provided for more efficient application of photoresist to a wafer surface. One aspect of the method comprises applying solvent to the wafer and spinning it to coat the entire wafer surface prior to the application of photoresist. This reduces surface tension on the wafer and reduces the amount of resist required to achieve a high quality film. The apparatus comprises adding a third solenoid and nozzle to the coating unit to accommodate the application of solvent to the center of the wafer surface. The method also describes incorporating a new solvent comprising diacetone alcohol, which is a low-pressure solvent, providing extended process latitudes and reduced material expenditures.

Abstract: A method and apparatus is provided for more efficient application of photoresist to a wafer surface. One aspect of the method comprises applying solvent to the wafer and spinning it to coat the entire wafer surface prior to the application of photoresist. This reduces surface tension on the wafer and reduces the amount of resist required to achieve a high quality film. The apparatus comprises adding a third solenoid and nozzle to the coating unit to accommodate the application of solvent to the center of the wafer surface. The method also describes incorporating a new solvent comprising diacetone alcohol, which is a low-pressure solvent, providing extended process latitudes and reduced material expenditures.

Abstract: A method and apparatus is provided for more efficient application of photoresist to a wafer surface. One aspect of the method comprises applying solvent to the wafer and spinning it to coat the entire wafer surface prior to the application of photoresist. This reduces surface tension on the wafer and reduces the amount of resist required to achieve a high quality film. The apparatus comprises adding a third solenoid and nozzle to the coating unit to accommodate the application of solvent to the center of the wafer surface. The method also describes incorporating a new solvent comprising diacetone alcohol, which is a low-pressure solvent, providing extended process latitudes and reduced material expenditures.

Abstract: A method for spinning a material onto a semiconductor device structure so as to substantially fill recesses formed in a surface of the semiconductor device structure and to impart the material with a substantially planar surface and semiconductor device structures formed thereby. The thickness of the material covering the surface is less than the depth of the recesses. The surface may remain substantially uncovered by the material.

Abstract: A method for spinning a material onto a semiconductor device structure so as to substantially fill recesses formed in a surface of the semiconductor device structure and to impart the material with a substantially planar surface and semiconductor device structures formed thereby. The thickness of the material covering the surface is less than the depth of the recesses. The surface may remain substantially uncovered by the material.

Abstract: A method for spinning a material onto a semiconductor device structure so as to substantially fill recesses formed in a surface of the semiconductor device structure and to impart the material with a substantially planar surface and semiconductor device structures formed thereby. The thickness of the material covering the surface is less than the depth of the recesses. The surface may remain substantially uncovered by the material.

Abstract: A method and apparatus is provided for more efficiently application of photoresist to a wafer surface. One aspect of the method comprises applying solvent to the wafer and spinning it to coat the entire wafer surface prior to the application of photoresist. This reduces surface tension on the wafer and reduces the amount of resist required to achieve a high quality film. The apparatus comprises adding a third solenoid and nozzle to the coating unit to accommodate the application of solvent to the center of the wafer surface. The method also describes incorporating a new solvent comprising Di-Acetone Alcohol, which is a low-pressure solvent, providing extended process latitudes and reduced material expenditures.

Abstract: A method and apparatus is provided for more efficiently application of photoresist to a wafer surface. One aspect of the method comprises applying solvent to the wafer and spinning it to coat the entire wafer surface prior to the application of photoresist. This reduces surface tension on the wafer and reduces the amount of resist required to achieve a high quality film. The apparatus comprises adding a third solenoid and nozzle to the coating unit to accommodate the application of solvent to the center of the wafer surface. The method also describes incorporating a new solvent comprising Di-Acetone Alcohol, which is a low-pressure solvent, providing extended process latitudes and reduced material expenditures.