Abstract: A process of fabricating a polycrystalline silicon resistor on a semiconductor structure is disclosed. According to the process insulating material is fabricated over selected regions of the semiconductor structure 10, and selected impurity 18 introduced into the insulating material, typically in conjunction with other process operations useful in fabricating semiconductor structures. Undoped regions of polycrystalline silicon 21 are then formed on the surface of the insulating material 15 and the entire structure is treated to cause the dopant in the insulating material 15 to out diffuse into the undoped polycrystalline silicon to thereby create resistors. The treating operation is typically the heat treatment performed in conjunction with other process operations in the fabrication of integrated circuits.

Abstract: A semiconductor pressure transducer having a polycrystalline silicon diaphragm providing an extremely pressure sensitive and temperature stable device, and a method of making the same. The polycrystalline silicon can easily be vapor deposited on an etch resistant layer covering a surface of a wafer or base, preferably monocrystalline silicon. Such vapor deposition of the polycrystalline silicon more accurately and consistently defines the thickness of the diaphragm than can be obtained by grinding or etching. A pressure responsive resistor formed in the diaphragm is automatically electrically isolated by the comparatively high resistivity of the polycrystalline silicon. Accordingly, PN junction isolation and passivating oxides on the diaphragm are not required thereby resulting in increased temperature stability.

Abstract: A semiconductor pressure transducer having a polycrystalline silicon diaphragm providing an extremely pressure sensitive and temperature stable device, and a method of making the same. The polycrystalline silicon can easily be vapor deposited on an etch resistant layer covering a surface of a wafer or base, preferably monocrystalline silicon. Such vapor deposition of the polycrystalline silicon more accurately and consistently defines the thickness of the diaphragm than can be obtained by grinding or etching. A pressure responsive resistor formed in the diaphragm is automatically electrically isolated by the comparatively high resistivity of the polycrystalline silicon. Accordingly, PN junction isolation and passivating oxides on the diaphragm are not required thereby resulting in increased temperature stability.