Abstract: A system for adjusting power employed by a medical device incorporating light emitting devices and being used for measuring patient medical parameters, includes a plurality of light emitting devices. A power unit is coupled to the light emitting devices and powers the light emitting devices responsive to respective control signals which determine power to be applied to the light emitting devices. A control unit for provides the control signals and is coupled to the power unit. The control signals intermittently turn off at least one of the plurality of light emitting devices in a power save mode in response to a determination that a patient medical parameter value measured by the medical device, using an active light emitting device of the plurality of light emitting devices, is at a safe level.

Abstract: Some embodiments of the invention provide a system to monitor a patient. In some aspects, a signal representing a value of a physiological parameter is received from a monitoring device. The received value is a value that caused the monitoring device to trigger an alarm associated with the psychological parameter. A notification is determined based on the received signal and on a second signal that represents a value of a second physiological parameter. The notification is then presented to an operator.

Abstract: A method is presented for self-test and self-repair of a semiconductor memory device. A single built-in self-test (BIST) engine with an extended address range is used to test the entirety of memory (i.e., both redundant and accessible memory portions) as a single array, preferably using a checkerboard bit pattern. An embodiment of the method comprises two stages. In the first stage, faulty rows in each memory portion are identified and their addresses recorded. Known-bad rows in accessible memory are then replaced by known-good redundant rows, and the resulting repaired memory is retested in a second stage. During the second stage, repair of the accessible memory portion is verified, while defects among the redundant portion are ignored. Compared to existing methods, the new method is believed to simplify the interface between the BIST and the built-in self-repair (BISR) circuitry, reduce the overall size of test and repair circuitry, and provide improved test coverage.

Abstract: A “Wrapper” system and method are presented for integrating built-in self-test (BIST) and built-in self-repair (BISR) functions in a semiconductor memory device. The wrapper reduces the usual dependency of BISR circuitry on the BIST design, so that modifications and enhancements to the BIST may be made without requiring significant changes to the BISR. A generic BIST engine with an extended address range (spanning both the accessible and the redundant rows) is used to test the entirety of memory as a single array, preferably using a checkerboard bit pattern. The memory is tested in two stages, using the same BIST algorithm. In the first stage, faulty rows in each memory portion are identified and their addresses recorded. At the end of the first stage a repair process allocates good redundant rows to replace faulty accessible rows. During the second stage, repair of the accessible memory portion is verified, while defects among the redundant portion are ignored.

Abstract: A method is presented for self-test and self-repair of a semiconductor memory device. Prior to the self-repair stage, both redundant and regular memory portions are comprehensively tested, preferably using a checkerboard bit pattern. Faulty rows identified in each memory portion during testing are recorded. Known-bad rows in regular memory are then replaced by known-good redundant rows in the self-repair stage, and the resulting repaired memory is retested for verification. Compared to existing methods, the new method is believed to provide improved test coverage, making it both more effective in identifying non-repairable memory devices and less prone to fail repairable ones.

Abstract: A “Wrapper” system and method are presented for integrating built-in self-test (BIST) and built-in self-repair (BISR) functions in a semiconductor memory device. The wrapper reduces the usual dependency of BISR circuitry on the BIST design, so that modifications and enhancements to the BIST may be made without requiring significant changes to the BISR. A generic BIST engine with an extended address range (spanning both the accessible and the redundant rows) is used to test the entirety of memory as a single array, preferably using a checkerboard bit pattern. The memory is tested in two stages, using the same BIST algorithm. In the first stage, faulty rows in each memory portion are identified and their addresses recorded. At the end of the first stage a repair process allocates good redundant rows to replace faulty accessible rows. During the second stage, repair of the accessible memory portion is verified, while defects among the redundant portion are ignored.

Abstract: A fuse circuit that includes a fuse and a full latch connected to the fuse. The fuse circuit is configured to receive a plurality of input signals including a preset signal and an enable signal. Preferably, a first pass gate is connected to the fuse and to the full latch and is configured to receive the enable signal and a second pass gate is connected to the full latch and is configured to receive the preset signal. Preferably, an output signal line is connected to the full latch and is configured to carry the output signal. The fuse circuit is configured to set the fuse using the preset signal. Ideally, the fuse circuit is configured to provide no direct path between VDD and VSS while using the preset signal to set the fuse. The fuse circuit is configured to provide an output signal which is dependent on the status of the fuse and the state of the enable signal.