Patents by Inventor Johnsoo KIM

Johnsoo KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming semiconductor device
    Patent number: 9704745
    Abstract: A sacrificial layer is formed to cover the gate structures. The sacrificial layer is patterned to form a first opening in the sacrificial layer. A preliminary contact is formed in the first opening and the sacrificial layer is selectively removed. An insulating layer is formed to cover the gate structures and to expose the preliminary contact. The preliminary contact is removed to form a second opening in the insulating layer, and then a contact is formed in the second opening.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: July 11, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: KeunHee Bai, Dohyoung Kim, Johnsoo Kim, Heungsik Park, Doo-Young Lee, Sanghyun Lee
  • Methods of manufacturing semiconductor devices including gate patterns with sidewall spacers and capping patterns on the sidewall spacers
    Patent number: 9536983
    Abstract: A method of forming a semiconductor device includes forming a gate electrode on a substrate, forming a first spacer on a sidewall of the gate electrode, forming a second spacer on the first spacer, and forming a capping pattern on top surfaces of the gate electrode, the first spacer and the second spacer. An outer sidewall of the second spacer is vertically aligned with a sidewall of the capping pattern.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: January 3, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Doo-Young Lee, Dohyoung Kim, Johnsoo Kim, Heungsik Park, Hongsik Shin, Younghun Choi
  • Methods of Manufacturing Semiconductor Devices Including Gate Patterns with Sidewall Spacers
    Publication number: 20160233310
    Abstract: A method of forming a semiconductor device includes forming a gate electrode on a substrate, forming a first spacer on a sidewall of the gate electrode, forming a second spacer on the first spacer, and forming a capping pattern on top surfaces of the gate electrode, the first spacer and the second spacer. An outer sidewall of the second spacer is vertically aligned with a sidewall of the capping pattern.
    Type: Application
    Filed: December 16, 2015
    Publication date: August 11, 2016
    Inventors: Doo-Young Lee, Dohyoung KIM, Johnsoo KIM, Heungsik PARK, Hongsik SHIN, Younghun CHOI
  • METHODS OF FORMING SEMICONDUCTOR DEVICE
    Publication number: 20160204030
    Abstract: A sacrificial layer is formed to cover the gate structures. The sacrificial layer is patterned to form a first opening in the sacrificial layer. A preliminary contact is formed in the first opening and the sacrificial layer is selectively removed. An insulating layer is formed to cover the gate structures and to expose the preliminary contact. The preliminary contact is removed to form a second opening in the insulating layer, and then a contact is formed in the second opening.
    Type: Application
    Filed: December 1, 2015
    Publication date: July 14, 2016
    Inventors: KeunHee BAI, Dohyoung KIM, Johnsoo KIM, Heungsik PARK, Doo-Young LEE, Sanghyun LEE