Abstract: An electronic filter includes a plurality of series arm acoustic wave resonators electrically connected in series between an input port and an output port, a plurality of parallel arm acoustic wave resonators electrically connected in parallel and electrically connected on first sides between respective ones of the plurality of series arm acoustic wave resonators and electrically connected on second sides to ground, and at least one additional acoustic wave resonator electrically connected in parallel to one of one of the plurality of series arm acoustic wave resonators or one of the plurality of parallel arm acoustic wave resonators and having a temperature coefficient of frequency (TCF) lower than a TCF of the acoustic wave resonator to which it is electrically connected in parallel.

Abstract: An electronic device comprises one or more heat generating circuit elements and a no-contact via thermally coupled to the one or more heat generating circuit elements to increase dissipation of heat from the electronic device.

Abstract: An acoustic wave device comprises a substrate including a piezoelectric material, and interdigital transducer (IDT) electrodes disposed on a surface of the substrate. The IDT electrodes have gap regions, edge regions, and center regions. A maximum width of the IDT electrodes in the gap regions is greater than the maximum width of the IDT electrodes in the edge regions, thereby achieving a velocity of an acoustic wave in the gap regions being greater than the velocity of the acoustic wave in the center regions, and the velocity of the acoustic wave in the center regions being greater than the velocity of the acoustic wave in the edge regions.

Abstract: An acoustic wave device comprises a substrate including a piezoelectric material, interdigital transducer (IDT) electrodes disposed on a surface of the substrate, the IDT electrodes having gap regions, edge regions, and center regions, a first dielectric film having a lower surface disposed on the IDT electrodes and the surface of the substrate, and a material having a density greater than a density of the first dielectric film disposed above the gap regions of the IDT electrodes.

Abstract: An acoustic wave device is disclosed. The acoustic waved device can be a shear horizontal mode surface acoustic wave device. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The piezoelectric layer can be a lithium niobate layer with a cut angle in a range of ?20° YX to 25° YX. The interdigital transducer electrode including a first layer and a second layer. The first layer affects acoustic properties of the acoustic wave device and the second layer affects electrical properties of the acoustic wave device. The second layer is positioned between the piezoelectric layer and the first layer such that a frequency response of the acoustic wave device includes a Rayleigh mode response at a frequency higher than a shear horizontal mode response.

Abstract: An acoustic wave device is disclosed. The acoustic waved device can be a shear horizontal mode surface acoustic wave device. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The piezoelectric layer can be a lithium niobate layer with a cut angle in a range of ?20° YX to 25° YX. The interdigital transducer electrode includes a first layer having a first thickness and a second layer having a second thickness. The first layer affects acoustic properties of the acoustic wave device and the second layer affects electrical properties of the acoustic wave device. The first layer is positioned between the piezoelectric layer and the second layer. The first thickness is configured such that a frequency response of the acoustic wave device includes a Rayleigh mode response at a frequency higher than a shear horizontal mode response resonance.

Abstract: A low velocity surface acoustic wave device, and a method of reducing the velocity of a surface acoustic wave generated by a surface acoustic wave device are described, the device including a piezoelectric layer, an interdigital transducer disposed on the piezoelectric substrate and configured to generate a surface acoustic wave in response to an electrical, and a temperature coefficient of frequency compensation layer disposed partially on the interdigital transducer and partially on the piezoelectric substrate, the temperature coefficient of frequency compensation layer having a low velocity layer disposed within it configured to reduce the velocity of a surface acoustic wave generated by the interdigital transducer, the method including disposing a wave velocity adjustment layer, the wave velocity adjustment layer being a low velocity layer, within a temperature compensation layer of the surface acoustic wave device.

Abstract: A switching module assembly is provided. The switching module assembly includes a plurality of transmit/receive terminals, an antenna terminal, a shunt indictor coupled to the antenna terminal, a plurality of duplexers coupled to the plurality of transmit/receive terminals, and a plurality of impedance rotation elements coupled to the plurality of duplexers. Each duplexer corresponds to a signal frequency of a plurality of signal frequencies, and the impedance rotation elements are configured to adjust the impedance of each duplexer in conjunction with the shunt inductor to provide a resonant frequency at the signal frequency of each duplexer. The switching module can be used in the front-end module of a communications device, such as a mobile phone.

Abstract: An acoustic wave device comprises a substrate including a piezoelectric material, interdigital transducer (IDT) electrodes disposed on an upper surface of the substrate. The IDT electrodes having gap regions, edge regions, and center regions. A duty factor of the IDT electrodes in the edge regions is greater than the duty factor of the IDT electrodes in the center regions. A first dielectric film is disposed above the IDT electrodes and an upper surface of the substrate. The first dielectric film has a greater thickness in portions of the center regions than in portions proximate the gap regions.

Abstract: An electronic filter includes a plurality of series arm acoustic wave resonators electrically connected in series between an input port and an output port, a plurality of parallel arm acoustic wave resonators electrically connected in parallel and electrically connected on first sides between respective ones of the plurality of series arm acoustic wave resonators and electrically connected on second sides to ground, and at least one additional acoustic wave resonator electrically connected in parallel to one of one of the plurality of series arm acoustic wave resonators or one of the plurality of parallel arm acoustic wave resonators and having a temperature coefficient of frequency (TCF) lower than a TCF of the acoustic wave resonator to which it is electrically connected in parallel.

Abstract: An electronic filter includes a plurality of series arm acoustic wave resonators electrically connected in series between an input port and an output port, a plurality of parallel arm acoustic wave resonators electrically connected in parallel and electrically connected on first sides between respective ones of the plurality of series arm acoustic wave resonators and electrically connected on second sides to ground, and at least one additional acoustic wave resonator electrically connected in parallel to one of one of the plurality of series arm acoustic wave resonators or one of the plurality of parallel arm acoustic wave resonators and having a temperature coefficient of frequency (TCF) lower than a TCF of the acoustic wave resonator to which it is electrically connected in parallel.

Abstract: An acoustic wave device comprises a substrate including a piezoelectric material, interdigital transducer (IDT) electrodes disposed on a surface of the substrate, the IDT electrodes having gap regions, edge regions, and center regions, a first dielectric film having a lower surface disposed on the IDT electrodes and the surface of the substrate, and a material having a density greater than a density of the first dielectric film disposed above the gap regions of the IDT electrodes.

Abstract: An acoustic wave device comprises a substrate including a piezoelectric material, and interdigital transducer (IDT) electrodes disposed on a surface of the substrate. The IDT electrodes have gap regions, edge regions, and center regions. A maximum width of the IDT electrodes in the gap regions is greater than the maximum width of the IDT electrodes in the edge regions, thereby achieving a velocity of an acoustic wave in the gap regions being greater than the velocity of the acoustic wave in the center regions, and the velocity of the acoustic wave in the center regions being greater than the velocity of the acoustic wave in the edge regions.

Abstract: An acoustic wave device comprises a substrate including a piezoelectric material, interdigital transducer (IDT) electrodes disposed on an upper surface of the substrate. The IDT electrodes having gap regions, edge regions, and center regions. A duty factor of the IDT electrodes in the edge regions is greater than the duty factor of the IDT electrodes in the center regions. A first dielectric film is disposed above the IDT electrodes and an upper surface of the substrate. The first dielectric film has a greater thickness in portions of the center regions than in portions proximate the gap regions.

Abstract: A filter device including a first filter having a first passband, and a second filter having a second passband, the first and second filters each being connected between a common contact and a respective signal contact, and the filter device configured to reduce spurious emissions generated in one filter due to propagation of Lamb waves in the other filter. In one example the first filter includes a SAW filter formed on a piezoelectric substrate, a SAW resonator formed on the piezoelectric substrate and connected in series between the common contact and the SAW filter, and a dielectric film formed over the piezoelectric substrate covering the SAW filter and the SAW resonator. The dielectric film has a first thickness over the SAW filter and a second, lesser, thickness over the SAW resonator, a difference between the first and second thicknesses being selected to suppress spurious emissions in the second passband generated by propagation of a Lamb wave in the SAW filter.

Abstract: An electronic filter includes a plurality of series arm acoustic wave resonators electrically connected in series between an input port and an output port, a plurality of parallel arm acoustic wave resonators electrically connected in parallel and electrically connected on first sides between respective ones of the plurality of series arm acoustic wave resonators and electrically connected on second sides to ground, and at least one additional acoustic wave resonator electrically connected in parallel to one of one of the plurality of series arm acoustic wave resonators or one of the plurality of parallel arm acoustic wave resonators and having a temperature coefficient of frequency (TCF) lower than a TCF of the acoustic wave resonator to which it is electrically connected in parallel.

Abstract: A filter device including a first filter having a first passband, and a second filter having a second passband, the first and second filters each being connected between a common contact and a respective signal contact, and the filter device configured to reduce spurious emissions generated in one filter due to propagation of Lamb waves in the other filter. In one example the first filter includes a SAW filter formed on a piezoelectric substrate, a SAW resonator formed on the piezoelectric substrate and connected in series between the common contact and the SAW filter, and a dielectric film formed over the piezoelectric substrate covering the SAW filter and the SAW resonator. The dielectric film has a first thickness over the SAW filter and a second, lesser, thickness over the SAW resonator, a difference between the first and second thicknesses being selected to suppress spurious emissions in the second passband generated by propagation of a Lamb wave in the SAW filter.

Abstract: A filter device that reduces spurious emissions generated in a frequency band 1.2 to 1.4 times greater than a center frequency of a passband of a filter. In one example the filter device includes a first filter connected between a common contact and a first signal contact and having a first passband, and a second filter connected between the common contact and a second signal contact and having a second passband with a center frequency in a range of 1.2 to 1.4 times greater than a center frequency of the first passband. The first filter includes a SAW filter formed on a piezoelectric substrate, a SAW resonator formed on the piezoelectric substrate and connected in series between the common contact and the SAW filter, and a dielectric film covering the SAW filter and SAW resonator, the dielectric film having a reduced thickness in a region corresponding to the SAW resonator.

Abstract: A high-frequency filter includes a first output to output a first signal, a first filter, a second filter, and a first matching circuit connected to an output of the first filter and to an output of the second filter. The first signal is provided to the first output from one of the output of the first filter and the output of the second filter via the first matching circuit. The first matching circuit includes a resonator connected in series between the first output and the output of only one of the first filter and the second filter.

Abstract: A filter device having improved attenuation and isolation characteristics. In one example the filter device has a common terminal, a first terminal, and a second terminal, and includes a first filter connected between the common terminal and the first terminal, a second filter connected between the common terminal and the second terminal, and an additional circuit including at least three IDT electrodes each connected to a respective one of a corresponding at least three connection points within the filter device, the at least three connection points being selected from a group consisting of the common terminal, the first terminal, the second terminal, a first node disposed between the plurality of first filter elements along a path extending between the common terminal and the first terminal, and a second node disposed between the plurality of second filter elements along a path extending between the common terminal and the second terminal.