Patents by Inventor JoJo Lee

JoJo Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby
    Patent number: 10297453
    Abstract: Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: May 21, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Yen Tsai, Da-Yuan Lee, JoJo Lee, Ming-Hsing Tsai, Hsueh Wen Tsau, Weng Chang, Ying-Chieh Hung, Yi-Hung Lin
  • Pre-Deposition Treatment and Atomic Layer Deposition (ALD) Process and Structures Formed Thereby
    Publication number: 20180218912
    Abstract: Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).
    Type: Application
    Filed: March 26, 2018
    Publication date: August 2, 2018
    Inventors: Cheng-Yen Tsai, Da-Yuan Lee, JoJo Lee, Ming-Hsing Tsai, Hsueh Wen Tsau, Weng Chang, Ying-Chieh Hung, Yi-Hung Lin
  • Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby
    Patent number: 9947540
    Abstract: Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).
    Type: Grant
    Filed: July 31, 2015
    Date of Patent: April 17, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Yen Tsai, Da-Yuan Lee, JoJo Lee, Ming-Hsing Tsai, Hsueh Wen Tsau, Weng Chang, Ying-Chieh Hung, Yi-Hung Lin
  • PRE-DEPOSITION TREATMENT AND ATOMIC LAYER DEPOSITION (ALD) PROCESS AND STRUCTURES FORMED THEREBY
    Publication number: 20170032972
    Abstract: Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).
    Type: Application
    Filed: July 31, 2015
    Publication date: February 2, 2017
    Inventors: Cheng-Yen Tsai, Da-Yuan Lee, JoJo Lee, Ming-Hsing Tsai, Hsueh Wen Tsau, Weng Chang, Ying-Chieh Hung, Yi-Hung Lin