Patents by Inventor Jojo Xing

Jojo Xing has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12293800
    Abstract: In addition to word line related short circuits within the blocks of the array structure of a non-volatile memory device, such as NAND memory, word line related shorts can also occur in the routing for supplying the word lines of the memory blocks. Depending on the layout of the routing, some shorts for the word lines associated with one block can affect other blocks of the memory array. In particular, if the routing of a pair of adjacent local supply lines are adjacent to a global supply line, a short between the pair of adjacent local supply lines for one block can lead, through the global supply line, to defects in another of the block. Techniques are presented for detecting these layout related problematic word lines.
    Type: Grant
    Filed: July 3, 2023
    Date of Patent: May 6, 2025
    Assignee: Sandisk Technologies, Inc.
    Inventors: Xuan Tian, Liang Li, Dandan Yi, Jojo Xing, Vincent Yin
  • Patent number: 12243605
    Abstract: In some situations, a leak on a wordline may be a localized problem that causes data loss in a block that contains the wordline. In other situations, such as when the leak occurs near a peripheral wordline routing area, the leak can affect the entire memory die. The storage system provided herein has a fatal wordline leak detector that determines the type of leak and, accordingly, whether just the block should be retired or whether related blocks should be retired.
    Type: Grant
    Filed: July 1, 2022
    Date of Patent: March 4, 2025
    Assignee: Sandisk Technologies, Inc.
    Inventors: Xuan Tian, Liang Li, Dandan Yi, Jojo Xing, Vincent Yin, Yongke Sun, Alan Bennett
  • Publication number: 20250006287
    Abstract: In addition to word line related short circuits within the blocks of the array structure of a non-volatile memory device, such as NAND memory, word line related shorts can also occur in the routing for supplying the word lines of the memory blocks. Depending on the layout of the routing, some shorts for the word lines associated with one block can affect other blocks of the memory array. In particular, if the routing of a pair of adjacent local supply lines are adjacent to a global supply line, a short between the pair of adjacent local supply lines for one block can lead, through the global supply line, to defects in another of the block. Techniques are presented for detecting these layout related problematic word lines.
    Type: Application
    Filed: July 3, 2023
    Publication date: January 2, 2025
    Applicant: Western Digital Technologies, Inc.
    Inventors: Xuan Tian, Liang Li, Dandan Yi, Jojo Xing, Vincent Yin
  • Publication number: 20240006010
    Abstract: In some situations, a leak on a wordline may be a localized problem that causes data loss in a block that contains the wordline. In other situations, such as when the leak occurs near a peripheral wordline routing area, the leak can affect the entire memory die. The storage system provided herein has a fatal wordline leak detector that determines the type of leak and, accordingly, whether just the block should be retired or whether related blocks should be retired.
    Type: Application
    Filed: July 1, 2022
    Publication date: January 4, 2024
    Applicant: Western Digital Technologies, Inc.
    Inventors: Xuan Tian, Liang Li, Dandan Yi, Jojo Xing, Vincent Yin, Yongke Sun, Alan Bennett