Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.

Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, a correlated electron material may comprise a dominant ligand and a substitutional ligand, which may permit electron donation and back-donation in a correlated electron material. Electron donation and back-donation may enable the correlated electron material to exhibit a transition from high impedance/insulative state to a low impedance conductive state.