Abstract: A semiconductor deposition and oxidation process using a single furnace cycle. The temperature and gas mixture is stabilized inside the furnace prior to introduction of a dopant at a relatively low temperature. The temperature of the chamber is then ramped-up and the dopant is diffused into the wafer in an inert ambient. The temperature is then ramped-up again and oxygen is introduced to produce an oxide layer. The wafers are then removed from the furnace and any residue of the dopant within the chamber is effectively neutralized by introducing a high flow of oxygen.

Abstract: A semiconductor deposition and oxidation process using a single furnace cycle. The temperature and gas mixture is stabilized inside the furnace prior to introduction of a dopant at a relatively low temperature. The temperature of the chamber is then ramped-up and the dopant is diffused into the wafer in an inert ambient. The temperature is then ramped-up again and oxygen is introduced to produce an oxide layer. The wafers are then removed from the furnace and any residue of the dopant within the chamber is effectively neutralized by introducing a high flow of oxygen.

Abstract: Apparatus for counterweighting a diffusion furnace cantilever arm for processing silicon wafers which has conventional slotted quartz boats for receiving silicon wafers wherein certain substitutes for said conventional quartz boats are constructed so as to be dummy loads which have the weight and dimensions of a filled quartz boat, but in which no silicon wafers are mounted. Other quartz boats have slots for a particular number of silicon wafers, but the remaining portion of the boat does not receive any wafers, and the boat has the weight and dimensions equivalent to a filled quartz boat. By combining the various boats on the cantilever arm a standard weight can be obtained.