Patents by Inventor Jon Candelaria
Jon Candelaria has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120214047Abstract: Concepts and methods are provided to reduce the cost and complexity of thin film battery (TFB) high volume manufacturing by eliminating and/or minimizing the use of conventional physical (shadow) masks. Laser scribing and other alternative physical maskless patterning techniques meet certain or all of the patterning requirements. In one embodiment, a method of manufacturing thin film batteries comprises providing a substrate, depositing layers corresponding to a thin film battery structure on the substrate, the layers including, in order of deposition, a cathode, an electrolyte and an anode, wherein at least one of the deposited layers is unpatterned by a physical mask during deposition, depositing a protective coating, and scribing the layers and the protective coating. Further, the edges of the layers may be covered by an encapsulation layer. Furthermore, the layers may be deposited on two substrates and then laminated to form the thin film battery.Type: ApplicationFiled: May 1, 2012Publication date: August 23, 2012Applicants: Motorola Mobility, Inc., Applied Materials, Inc.Inventors: BYUNG SUNG KWAK, Nety M. Krishna, Kurt Eisenbeiser, William J. Dauksher, Jon Candelaria
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Patent number: 8168318Abstract: Concepts and methods are provided to reduce the cost and complexity of thin film battery (TFB) high volume manufacturing by eliminating and/or minimizing the use of conventional physical (shadow) masks. Laser scribing and other alternative physical maskless patterning techniques meet certain or all of the patterning requirements. In one embodiment, a method of manufacturing thin film batteries comprises providing a substrate, depositing layers corresponding to a thin film battery structure on the substrate, the layers including, in order of deposition, a cathode, an electrolyte and an anode, wherein at least one of the deposited layers is unpatterned by a physical mask during deposition, depositing a protective coating, and scribing the layers and the protective coating. Further, the edges of the layers may be covered by an encapsulation layer. Furthermore, the layers may be deposited on two substrates and then laminated to form the thin film battery.Type: GrantFiled: October 23, 2008Date of Patent: May 1, 2012Assignees: Applied Materials, Inc., Motorola Mobility, Inc.Inventors: Byung Sung Kwak, Nety M. Krishna, Kurt Eisenbeiser, William J. Dauksher, Jon Candelaria
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Publication number: 20090148764Abstract: Concepts and methods are provided to reduce the cost and complexity of thin film battery (TFB) high volume manufacturing by eliminating and/or minimizing the use of conventional physical (shadow) masks. Laser scribing and other alternative physical maskless patterning techniques meet certain or all of the patterning requirements. In one embodiment, a method of manufacturing thin film batteries comprises providing a substrate, depositing layers corresponding to a thin film battery structure on the substrate, the layers including, in order of deposition, a cathode, an electrolyte and an anode, wherein at least one of the deposited layers is unpatterned by a physical mask during deposition, depositing a protective coating, and scribing the layers and the protective coating. Further, the edges of the layers may be covered by an encapsulation layer. Furthermore, the layers may be deposited on two substrates and then laminated to form the thin film battery.Type: ApplicationFiled: October 23, 2008Publication date: June 11, 2009Applicants: APPLIED MATERIALS, INC., MOTOROLA, INC.Inventors: Byung Sung Kwak, Nety M. Krishna, Kurt Eisenbelser, William J. Dauksher, Jon Candelaria
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Publication number: 20060043438Abstract: An exemplary system and method for providing an integrated photosensing element suitably adapted for use in CMOS imaging applications is disclosed as comprising inter alia: a processed CMOS host wafer (460) bonded with a monocrystalline, optically active donor wafer (300); a photosensing element (390) integrated in said optically active donor wafer (300) having an interconnect via (505, 495, 485) substantially decoupled from the photosensing element (390), wherein the host (460) and donor (300) wafers are bonded through the optically active material in a region disposed near a metalization surface (450, 455, 445) of the CMOS layer (460) in order to allow fabrication of the interconnect (505, 495, 485). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize photosensing performance or other material characteristics.Type: ApplicationFiled: August 26, 2004Publication date: March 2, 2006Inventors: Paige Holm, Jon Candelaria
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Publication number: 20050040316Abstract: An exemplary system and method for providing a vertically integrated photosensing element suitably adapted for use in CMOS imaging applications is disclosed as comprising inter alia: a processed CMOS layer (420); and a photosensing element (380) fabricated in a vertically integrated optically active layer (320, 350), where the optically active layer (320, 350) is bonded to the CMOS layer (420) and the optically active layer (320, 350) is positioned near a metalization surface (405) of the CMOS layer (420). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize photosensing performance or other material characteristics.Type: ApplicationFiled: August 13, 2003Publication date: February 24, 2005Inventors: Paige Holm, Jon Candelaria
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Publication number: 20050035381Abstract: An exemplary system and method for providing a vertically integrated photosensing element suitably adapted for use in CMOS imaging applications is disclosed as comprising inter alia: a processed CMOS layer (420); and a photosensing element (380) fabricated in a vertically integrated optically active layer (320, 350), where the optically active layer (320, 350) is bonded to the CMOS layer (420) and the optically active layer (320, 350) is positioned near a metalization surface (405) of the CMOS layer (420). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize photosensing performance or other material characteristics.Type: ApplicationFiled: August 13, 2003Publication date: February 17, 2005Inventors: Paige Holm, Jon Candelaria
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Patent number: 6049114Abstract: A method of forming a semiconductor device includes providing a substrate (10) and depositing a gate dielectric (12) overlying the substrate (10). A gate is formed overlying the gate dielectric (12). The gate has a first sidewall and comprises a metal-containing layer (14) overlying the gate dielectric (12). A first spacer layer (20) is deposited over the gate and the substrate (10). A portion of the first spacer layer along the first sidewall forms a first spacer (22). A liner layer (30) is deposited over the gate and the substrate (10), and a second spacer layer (32) is deposited over the liner layer (30). The second spacer layer (32) is etched to leave a portion of the second spacer layer (32) along the first sidewall to form a second spacer (34). Also disclosed is a metal gate structure of a semiconductor device.Type: GrantFiled: July 20, 1998Date of Patent: April 11, 2000Assignee: Motorola, Inc.Inventors: Bikas Maiti, Jon Candelaria, Jian Chen
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Patent number: 4446194Abstract: When multilayer-metal electronic devices are heated, voids can form in the metal layers. Void formation is avoided by using a double dielectric layer as the interlayer dielectric. The double layer has a first oxide layer portion in contact with the first metal which is formed by plasma assisted chemical vapor deposition, and a second oxide layer portion formed by other means. The plasma formed oxide layer portion is believed to be in compressive stress relative to the substrate.Type: GrantFiled: June 21, 1982Date of Patent: May 1, 1984Assignee: Motorola, Inc.Inventors: Jon Candelaria, Kurt S. Heidinger