Patents by Inventor Jon Fredrick Ihlefeld

Jon Fredrick Ihlefeld has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8183108
    Abstract: A method of making dense dielectrics layers via chemical solution deposition by adding inorganic glass fluxed material to high dielectric constant compositions, depositing the resultant mixture onto a substrate and annealing the substrate at temperatures between the softening point of the inorganic glass flux and the melting point of the substrate. A method of making a capacitor comprising a dense dielectric layer.
    Type: Grant
    Filed: June 15, 2006
    Date of Patent: May 22, 2012
    Assignee: CDA Processing Limited Liability Company
    Inventors: William J. Borland, Seigi Suh, Jon-Paul Maria, Jon Fredrick Ihlefeld, Ian Burn
  • Publication number: 20120040100
    Abstract: A process for planarizing a substrate involves applying a coating of a first solution of yttrium oxide precursor to a rough substrate surface and heating to remove solvent and convert the yttrium oxide precursor to yttrium oxide. This is repeated with the first solution and then with the second solution. A final surface roughness less than 1 nm RMS may be obtained. In addition, a process for preparing a layered structure includes solution deposition planarization of a rough substrate using different concentrations of metal oxide precursor to provide a metal oxide surface having a surface roughness, and then depositing MgO by IBAD (ion beam assisted deposition). A benefit of a better in plane MgO texture was observed for lower molarities, and when two solutions of different concentrations was employed for coating the rough substrate prior to IBAD-MgO.
    Type: Application
    Filed: June 24, 2011
    Publication date: February 16, 2012
    Applicant: Los Alamos National Security, LLC
    Inventors: Vladimir Matias, Christopher J. Sheehan, Jon Fredrick Ihlefeld, Paul Gilbert Clem
  • Publication number: 20100230149
    Abstract: A method of making dense dielectrics layers via chemical solution deposition by adding inorganic glass fluxed material to high dielectric constant compositions, depositing the resultant mixture onto a substrate and annealing the substrate at temperatures between the softening point of the inorganic glass flux and the melting point of the substrate. A method of making a capacitor comprising a dense dielectric layer.
    Type: Application
    Filed: June 15, 2006
    Publication date: September 16, 2010
    Inventors: William Borland, Seigi Suh, Jon-Paul Maria, Jon Fredrick Ihlefeld, Ian Burn
  • Patent number: 7601181
    Abstract: Described herein are methods for making articles comprising a dielectric layer formed from any solution composition that can form barium titanate during firing and containing manganese in an amount between 0.002 and 0.05 atom percent of the solution composition, wherein the dielectric layer has been formed on metal foil and fired in a reducing atmosphere.
    Type: Grant
    Filed: October 25, 2007
    Date of Patent: October 13, 2009
    Assignees: E.I. du Pont de Nemours and Company, North Carolina State University
    Inventors: William Borland, Ian Burn, Jon Fredrick Ihlefeld, Jon Paul Maria, Seigi Suh
  • Patent number: 7572518
    Abstract: The present invention is directed to an article comprising a dielectric layer formed from any solution composition that can form barium titanate during firing and containing manganese in an amount between 0.002 and 0.05 atom percent of the solution composition, wherein the dielectric layer has been formed on metal foil and fired in a reducing atmosphere.
    Type: Grant
    Filed: October 24, 2007
    Date of Patent: August 11, 2009
    Assignees: E. I. du Pont de Nemours and Company, North Carolina State University
    Inventors: William Borland, Ian Burn, Jon Fredrick Ihlefeld, Jon Paul Maria, Seigi Suh
  • Publication number: 20080010798
    Abstract: Methods of making capacitors are disclosed that comprise forming a dielectric layer over a substrate with a first electrode or a bare metallic foil, depositing a top conductive layer over the dielectric layer, and annealing the dielectric layer and the top conductive layer wherein the foil or first electrode, the dielectric, and the conductive layer form a capacitor.
    Type: Application
    Filed: July 14, 2006
    Publication date: January 17, 2008
    Inventors: William J. Borland, Patrick Daniels, Dean W. Face, Jon Fredrick Ihlefeld, Jon-Paul Maria
  • Patent number: 7029971
    Abstract: Dielectrics are formed having high dielectric constants, low loss tangents, and other desirable electrical and physical properties. The dielectrics are annealed at temperatures allowing the use of copper foil substrates, and at low oxygen partial pressures.
    Type: Grant
    Filed: July 17, 2003
    Date of Patent: April 18, 2006
    Assignees: E. I. du Pont de Nemours and Company, Norch Carolina State University
    Inventors: William J. Borland, Jon Fredrick Ihlefeld, Angus Ian Kingon, Jon-Paul Maria