Abstract: A vehicle having a tail lift is disclosed. The tail lift may be configured to move between a retracted position and an extended position. The tail lift may be disposed perpendicular to a vehicle cargo bed in the retracted position, and parallel to the vehicle cargo bed in the extended position. The vehicle may further include a detection unit configured to detect a placement location of a cargo on the tail lift and presence of an obstruction in proximity to the tail lift. The vehicle may additionally include a processor that may obtain inputs from the detection unit when the tail lift may be in the extended position. The processor may determine that a predefined condition may be met based on the obtained inputs. The processor may further output a notification responsive to a determination that the predefined condition may be met.

Abstract: A refrigerated delivery vehicle is disclosed. The vehicle may include a refrigerated cargo zone configured to store a plurality of delivery packages. The refrigerated cargo zone may include an access door. The vehicle may further include a detection unit configured to detect a user movement in the refrigerated cargo zone and an access door movement when the vehicle may be traversing a delivery route or parked. The vehicle may further include a processor configured to obtain inputs from the detection unit, and determine a user inefficiency parameter based on the inputs. The processor may be further configured to compare the user inefficiency parameter with a threshold inefficiency parameter. The processor may output a notification instructing the user to reduce the user movement or the access door movement when the user inefficiency parameter may be greater than the threshold inefficiency parameter.

Abstract: Methods and systems are provided for controlling a speed of a vehicle based on whether a rain tray is coupled within the vehicle, below a vented hood of the vehicle. In one example, a method may include maintaining a vehicle speed of a vehicle below a set vehicle speed threshold and alerting a vehicle operator of the set vehicle speed threshold when it is detected that a rain tray is installed in the vehicle, below a vent of a vented hood of the vehicle. In another example, the set vehicle speed threshold may be reduced due to the presence of rain.

Abstract: Methods and systems are provided for controlling a speed of a vehicle based on whether a rain tray is coupled within the vehicle, below a vented hood of the vehicle. In one example, a method may include maintaining a vehicle speed of a vehicle below a set vehicle speed threshold and alerting a vehicle operator of the set vehicle speed threshold when it is detected that a rain tray is installed in the vehicle, below a vent of a vented hood of the vehicle. In another example, the set vehicle speed threshold may be reduced due to the presence of rain.

Abstract: Exemplary methods and vehicles are disclosed. Exemplary methods may include determining that a vehicle is a fleet vehicle, establishing a presence of a configuration bit indicating the vehicle is a fleet vehicle, receiving an indication of a conclusion of a vehicle usage session as a fleet vehicle, and resetting a plurality of user-adjustable vehicle parameters to a default setting in response to the conclusion of the vehicle usage. Other exemplary methods may include installing a configuration bit into a vehicle, which indicates that the vehicle is a fleet vehicle, and providing a processor for the vehicle. The processor may be configured to reset a plurality of user-adjustable vehicle parameters to a default setting in response to the configuration bit and an indication of a conclusion of a vehicle usage associated with the vehicle.

Abstract: The invention provides a method of fabricating a semiconductor device. In one aspect, the method comprises heating a gas mixture comprising chlorohydrocarbon having a general formula of CxHxClx, wherein x=2, 3, or 4, by passing it through a first chamber packed with surface area expanding members heated to a temperature to substantially dissociate the chlorohydrocarbon into chlorine and hydrocarbon. The dissociated chlorohydrocarbon is then passed, together with oxygen, into a second chamber heated to a lesser temperature to form an oxide film on a semiconductor substrate.

Abstract: The invention provides a method of fabricating a semiconductive device. In one aspect, the method comprises heating a gas mixture [225] comprising chlorohydrocarbon having a general formula of CxHxClx, wherein x=2, 3, or 4. The chlorohydrocarbon is heated in a first chamber 210 to a first temperature that substantially disassociates the chlorohydrocarbon. The substantially disassociated chlorohydrocarbon is used to form a film on a semiconductive substrate [235] that is located in a second chamber [215].

Abstract: A trench structure in a wafer of semiconductor material and the method of forming the trench structure are described. The trench structure is formed on a semiconductor wafer that has a top surface of slow oxidization rate—slower than that of other major crystallographic planes of the semiconductor material. The trench is etched into the semiconductor wafer. The trench has substantially vertical trench-sidewalls near the top surface, the vertical trench-sidewalls near the top surface containing crystallographic plane that oxidizes at a rate comparable to that of the top surface. An insulating layer is grown on the top surface and on the trench-sidewalls and on corners where sidewall surfaces approach the top surface, the insulating layer at the corners being substantially thicker than at the sidewall adjacent to the corners. The difference in the oxide thickness is due to the faster oxidizing planes exposed at the corners. Finally, the trench is filled with a dielectric material.

Abstract: The invention provides a method of fabricating a semiconductive device. In one aspect, the method comprises heating a gas mixture [225] comprising chlorohydrocarbon having a general formula of CxHxClx, wherein x=2, 3, or 4. The chlorohydrocarbon is heated in a first chamber 210 to a first temperature that substantially disassociates the chlorohydro-carbon. The substantially disassociated chlorohydrocarbon is used to form a film on a semiconductive substrate [235] that is located in a second chamber [215].

Abstract: A trench structure in a wafer of semiconductor material and the method of forming the trench structure are described. The trench structure is formed on a semiconductor wafer that has a top surface of slow oxidization rate—slower than that of other major crystallographic planes of the semiconductor material. The trench is etched into the semiconductor wafer. The trench has substantially vertical trench-sidewalls near the top surface, the vertical trench-sidewalls near the top surface containing crystallographic plane that oxidizes at a rate comparable to that of the top surface. An insulating layer is grown on the top surface and on the trench-sidewalls and on corners where sidewall surfaces approach the top surface, the insulating layer at the corners being substantially thicker than at the sidewall adjacent to the corners. The difference in the oxide thickness is due to the faster oxidizing planes exposed at the corners. Finally, the trench is filled with a dielectric material.

Abstract: The present invention provides a method for improving a physical property of a substrate, a method for manufacturing an integrated circuit, and an integrated circuit manufactured using the aforementioned method. In one aspect of the invention, the method for improving a physical property of a substrate includes subjecting the substrate to effects of a plasma process 830, wherein the substrate has a physical property defect value associated therewith subsequent to the plasma process. The method further includes exposing the substrate to an ultraviolet (UV) energy source 840 to improve the physical property defect value.

Abstract: A trench structure in a wafer of semiconductor material and the method of forming the trench structure are described. The trench structure is formed on a semiconductor wafer that has a top surface of slow oxidization rate—slower than that of other major crystallographic planes of the semiconductor material. The trench is etched into the semiconductor wafer. The trench has substantially vertical trench-sidewalls near the top surface, the vertical trench-sidewalls near the top surface containing crystallographic plane that oxidizes at a rate comparable to that of the top surface. An insulating layer is grown on the top surface and on the trench-sidewalls and on corners where sidewall surfaces approach the top surface, the insulating layer at the corners being substantially thicker than at the sidewall adjacent to the corners. The difference in the oxide thickness is due to the faster oxidizing planes exposed at the corners. Finally, the trench is filled with a dielectric material.

Abstract: A trench structure in a wafer of semiconductor material and the method of forming the trench structure are described. The trench structure is formed on a semiconductor wafer that has a top surface of slow oxidization rate—slower than that of other major crystallographic planes of the semiconductor material. The trench is etched into the semiconductor wafer. The trench has substantially vertical trench-sidewalls near the top surface, the vertical trench-sidewalls near the top surface containing crystallographic plane that oxidizes at a rate comparable to that of the top surface. An insulating layer is grown on the top surface and on the trench-sidewalls and on corners where sidewall surfaces approach the top surface, the insulating layer at the corners being substantially thicker than at the sidewall adjacent to the corners. The difference in the oxide thickness is due to the faster oxidizing planes exposed at the corners. Finally, the trench is filled with a dielectric material.

Abstract: The present invention provides a method for improving a physical property of a substrate, a method for manufacturing an integrated circuit, and an integrated circuit manufactured using the aforementioned method. In one aspect of the invention, the method for improving a physical property of a substrate includes subjecting the substrate to effects of a plasma process 830, wherein the substrate has a physical property defect value associated therewith subsequent to the plasma process. The method further includes exposing the substrate to an ultraviolet (UV) energy source 840 to improve the physical property defect value.

Abstract: The present invention provides a method for improving a physical property of a substrate, a method for manufacturing an integrated circuit, and an integrated circuit manufactured using the aforementioned method. In one aspect of the invention, the method for improving a physical property of a substrate includes subjecting the substrate to effects of a plasma process 830, wherein the substrate has a physical property defect value associated therewith subsequent to the plasma process. The method further includes exposing the substrate to an ultraviolet (UV) energy source 840 to improve the physical property defect value.