Abstract: A semiconductor structure includes a substrate, nanostructures, source/drain features, a gate structure, and inner spacers. The nanostructures are over the substrate and spaced apart from each other in a Z-direction. The source/drain features are electrically connected to and on opposite sides of the nanostructures in an X-direction. The gate structure extends in a Y-direction and wraps around the nanostructures. The inner spacers are between the nanostructures in the Z-direction. Each of the inner spacers includes a soft core layer and a hard liner layer wrapping around the soft core layer.

Abstract: A method of generating an IC layout diagram includes receiving an IC layout diagram including a gate region and a gate via, the gate via being positioned at a location within an active region and along a width of the gate region extending across the active region, receiving a first gate resistance value of the gate region, retrieving a second gate resistance value from a resistance value reference based on the location and the width, using the first and second resistance values to determine that the IC layout diagram does not comply with a design specification, and based on the non-compliance with the design specification, modifying the IC layout diagram.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members vertically stacked above a substrate, a gate structure engaging the channel members, a gate sidewall spacer disposed on a sidewall of the gate structure, an epitaxial feature abutting end portions of the channel members, and inner spacers interposing the gate structure and the epitaxial feature. The end portion of at least one of the channel members includes a first dopant. A concentration of the first dopant in the end portion of the at least one of the channel members is higher than in a center portion of the at least one of the channel members. The concentration of the first dopant in the end portion of the at least one of the channel members is higher than in an outer portion of the epitaxial feature.

Abstract: Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary device includes a channel layer, a first source/drain feature, a second source/drain feature, and a metal gate. The channel layer has a first horizontal segment, a second horizontal segment, and a vertical segment connects the first horizontal segment and the second horizontal segment. The first horizontal segment and the second horizontal segment extend along a first direction, and the vertical segment extends along a second direction. The vertical segment has a width along the first direction and a thickness along the second direction, and the thickness is greater than the width. The channel layer extends between the first source/drain feature and the second source/drain feature along a third direction. The metal gate wraps channel layer. In some embodiments, the first horizontal segment and the second horizontal segment are nanosheets.

Abstract: A modular, radio frequency (“RF”) system includes one or more directional antennas and is configured with both hardware and software components to enable the RF system to monitor (e.g., detect or track signals or objects) and/or interact with (e.g., track signals or objects, or transmit signals) objects in particular directions. The RF system includes one or more machine learning models to determine, based on received signals, one or more signals to transmit.

Abstract: Source/drain silicide that improves performance and methods for fabricating such are disclosed herein. An exemplary device includes a first channel layer disposed over a substrate, a second channel layer disposed over the first channel layer, and a gate stack that surrounds the first channel layer and the second channel layer. A source/drain feature disposed adjacent the first channel layer, second channel layer, and gate stack. The source/drain feature is disposed over first facets of the first channel layer and second facets of the second channel layer. The first facets and the second facets have a (111) crystallographic orientation. An inner spacer disposed between the gate stack and the source/drain feature and between the first channel layer and the second channel layer. A silicide feature is disposed over the source/drain feature where the silicide feature extends into the source/drain feature towards the substrate to a depth of the first channel layer.

Abstract: A method for forming a semiconductor device structure includes forming a plurality of fin structures from a substrate, each fin structure having first and second semiconductor layers alternatingly stacked, forming an isolation region around the fin structures, forming a first liner layer on exposed surfaces of the fin structures and the isolation region, forming a second liner layer on the first liner layer, selectively removing a portion of the second liner layer so that the second liner layer remains over sidewall of each fin structure, forming an insulating layer on the first and second liner layers, removing the second liner layer, forming a sacrificial gate structure over a portion of the fin structure and the insulating layer, removing a portion of the fin structure not covered by the sacrificial gate structure, forming a source/drain feature such that a gap is formed around and separate the source/drain feature from the insulating layer, and forming a sealing material on the source/drain feature and th

Abstract: A modular, radio frequency (“RF”) system includes one or more directional antennas and is configured with both hardware and software components to enable the RF system to monitor (e.g., detect or track signals or objects) and/or interact with (e.g., track signals or objects, or transmit signals) objects in particular directions. The RF system includes one or more machine learning models to determine, based on received signals, one or more signals to transmit.

Abstract: A semiconductor device structure includes a dielectric layer, a first source/drain feature in contact with the dielectric layer, wherein the first source/drain feature comprises a first sidewall. The structure also includes a second source/drain feature in contact with the dielectric layer and adjacent to the first source/drain feature, wherein the second source/drain feature comprises a second sidewall. The structure also includes an insulating layer disposed over the dielectric layer and between the first sidewall and the second sidewall, wherein the insulating layer comprises a first surface facing the first sidewall, a second surface facing the second sidewall, a third surface connecting the first surface and the second surface, and a fourth surface opposite the third surface. The structure further includes a sealing material disposed between the first sidewall and the first surface, wherein the sealing material, the first sidewall, the first surface, and the dielectric layer are exposed to an air gap.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members vertically stacked above a substrate, a gate structure engaging the channel members, a gate sidewall spacer disposed on a sidewall of the gate structure, an epitaxial feature abutting end portions of the channel members, and inner spacers interposing the gate structure and the epitaxial feature. The end portion of at least one of the channel members includes a first dopant. A concentration of the first dopant in the end portion of the at least one of the channel members is higher than in a center portion of the at least one of the channel members. The concentration of the first dopant in the end portion of the at least one of the channel members is higher than in an outer portion of the epitaxial feature.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: A semiconductor device includes semiconductor channel members disposed over a substrate, a gate dielectric layer disposed on and wrapping around the semiconductor channel members, a gate electrode layer disposed on the gate dielectric layer and wrapping around the semiconductor channel members, a source/drain (S/D) epitaxial layer in physical contact with the semiconductor channel members, and a dielectric spacer interposing the S/D epitaxial layer and the gate dielectric layer. The dielectric spacer includes a first dielectric layer in physical contact with the gate dielectric layer and a second dielectric layer in physical contact with the first dielectric layer. The first dielectric layer has a dielectric constant higher than that of the second dielectric layer. The second dielectric layer separates the first dielectric layer from physically contacting the S/D epitaxial layer.

Abstract: A method of generating an IC layout diagram includes receiving an IC layout diagram including a gate region and a gate via, the gate via being positioned at a location within an active region and along a width of the gate region extending across the active region, receiving a first gate resistance value of the gate region, retrieving a second gate resistance value from a resistance value reference based on the location and the width, using the first and second resistance values to determine that the IC layout diagram does not comply with a design specification, and based on the non-compliance with the design specification, modifying the IC layout diagram.

Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members disposed over a substrate, a gate structure engaging the channel members, and an epitaxial feature adjacent the channel members. At least one of the channel members has an end portion in physical contact with an outer portion of the epitaxial feature. The end portion of the at least one of the channel members includes a first dopant of a first concentration. The outer portion of the epitaxial feature includes a second dopant of a second concentration. The first concentration is higher than the second concentration.

Abstract: A modular, radio frequency (“RF”) system includes one or more directional antennas and is configured with both hardware and software components to enable the RF system to monitor (e.g., detect or track signals or objects) and/or interact with (e.g., track signals or objects, or transmit signals) objects in particular directions. The RF system includes one or more machine learning models to determine, based on received signals, one or more signals to transmit.

Abstract: A modular, radio frequency (“RF”) system includes one or more directional antennas and is configured with both hardware and software components to enable the RF system to monitor (e.g., detect or track signals or objects) and/or interact with (e.g., track signals or objects, or transmit signals) objects in particular directions. The RF system includes one or more machine learning models to determine, based on received signals, one or more signals to transmit.

Abstract: A modular, radio frequency (“RF”) system includes one or more directional antennas and is configured with both hardware and software components to enable the RF system to monitor (e.g., detect or track signals or objects) and/or interact with (e.g., track signals or objects, or transmit signals) objects in particular directions. The RF system includes one or more machine learning models to determine, based on received signals, one or more signals to transmit.

Abstract: A modular, radio frequency (“RF”) system includes one or more directional antennas and is configured with both hardware and software components to enable the RF system to monitor (e.g., detect or track signals or objects) and/or interact with (e.g., track signals or objects, or transmit signals) objects in particular directions. The RF system includes one or more machine learning models to determine, based on received signals, one or more signals to transmit.