Patents by Inventor Jon Maimon

Jon Maimon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Programmable resistance memory
    Patent number: 8908413
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: December 9, 2014
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Memory device
    Patent number: 8440501
    Abstract: A memory or switching device includes a mesa and a first electrode conforming to said mesa. The device also includes a second electrode and a phase-change or switching material disposed between said first and second electrodes. The phase-change or switching material is in electrical communication with the first and second electrodes at a first contact region and a second contact region respectively. Also described is a method for making a memory or switching device. The method includes providing a first insulator and configuring the first insulator to provide a mesa. A first conductive layer is provided conforming to the mesa. A phase-change or switching material is provided over a portion of the first conductive layer, and a second conductive layer is provided over the phase-change or switching material.
    Type: Grant
    Filed: March 7, 2011
    Date of Patent: May 14, 2013
    Assignee: Ovonyx, Inc.
    Inventors: David Sargent, Jon Maimon
  • Arsenic-containing variable resistance materials
    Patent number: 8217379
    Abstract: A variable resistance material for memory applications. The material includes a base Ge—Sb—Te composition and further includes As-doping. The materials were included in variable resistance memory devices. Incorporation of As in the variable resistance composition led to a significant increase in the operational life of the device and, unexpectedly, did not reduce the programming speed of the device. In one embodiment, the composition includes at atomic concentration of Ge in the range from 7%-13%, an atomic concentration of Sb in the range from 50%-70%, an atomic concentration of Te in the range from 20%-30%, and an atomic concentration of As in the range from 2%-15%.
    Type: Grant
    Filed: July 20, 2009
    Date of Patent: July 10, 2012
    Assignee: Ovonyx, Inc.
    Inventors: Carl Schell, Guy Wicker, Jon Maimon
  • Programmable Resistance Memory
    Publication number: 20110305075
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Application
    Filed: August 24, 2011
    Publication date: December 15, 2011
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Programmable resistance memory
    Patent number: 8009455
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Grant
    Filed: January 20, 2009
    Date of Patent: August 30, 2011
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Memory Device
    Publication number: 20110154663
    Abstract: A memory or switching device includes a mesa and a first electrode conforming to said mesa. The device also includes a second electrode and a phase-change or switching material disposed between said first and second electrodes. The phase-change or switching material is in electrical communication with the first and second electrodes at a first contact region and a second contact region respectively. Also described is a method for making a memory or switching device. The method includes providing a first insulator and configuring the first insulator to provide a mesa. A first conductive layer is provided conforming to the mesa. A phase-change or switching material is provided over a portion of the first conductive layer, and a second conductive layer is provided over the phase-change or switching material.
    Type: Application
    Filed: March 7, 2011
    Publication date: June 30, 2011
    Applicant: Ovonyx, Inc.
    Inventors: David Sargent, Jon Maimon
  • Memory device
    Patent number: 7906772
    Abstract: A memory or switching device includes a mesa and a first electrode conforming to said mesa. The device also includes a second electrode and a phase-change or switching material disposed between said first and second electrodes. The phase-change or switching material is in electrical communication with the first and second electrodes at a first contact region and a second contact region respectively. Also described is a method for making a memory or switching device. The method includes providing a first insulator and configuring the first insulator to provide a mesa. A first conductive layer is provided conforming to the mesa. A phase-change or switching material is provided over a portion of the first conductive layer, and a second conductive layer is provided over the phase-change or switching material.
    Type: Grant
    Filed: September 4, 2007
    Date of Patent: March 15, 2011
    Assignee: Ovonyx, Inc.
    Inventors: David Sargent, Jon Maimon
  • Arsenic-Containing Variable Resistance Materials
    Publication number: 20110012080
    Abstract: A variable resistance material for memory applications. The material includes a base Ge—Sb—Te composition and further includes As-doping. The materials were included in variable resistance memory devices. Incorporation of As in the variable resistance composition led to a significant increase in the operational life of the device and, unexpectedly, did not reduce the programming speed of the device. In one embodiment, the composition includes at atomic concentration of Ge in the range from 7%-13%, an atomic concentration of Sb in the range from 50%-70%, an atomic concentration of Te in the range from 20%-30%, and an atomic concentration of As in the range from 2%-15%.
    Type: Application
    Filed: July 20, 2009
    Publication date: January 20, 2011
    Inventors: Carl Schell, Guy Wicker, Jon Maimon
  • Programmable resistance memory
    Publication number: 20100182825
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Application
    Filed: January 20, 2009
    Publication date: July 22, 2010
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Memory Device
    Publication number: 20090057642
    Abstract: A memory or switching device includes a mesa and a first electrode conforming to said mesa. The device also includes a second electrode and a phase-change or switching material disposed between said first and second electrodes. The phase-change or switching material is in electrical communication with the first and second electrodes at a first contact region and a second contact region respectively. Also described is a method for making a memory or switching device. The method includes providing a first insulator and configuring the first insulator to provide a mesa. A first conductive layer is provided conforming to the mesa. A phase-change or switching material is provided over a portion of the first conductive layer, and a second conductive layer is provided over the phase-change or switching material.
    Type: Application
    Filed: September 4, 2007
    Publication date: March 5, 2009
    Applicant: Ovonyx, Inc.
    Inventors: David Sargent, Jon Maimon
  • Programmable resistance memory element and method for making same
    Patent number: 7365354
    Abstract: A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making the opening.
    Type: Grant
    Filed: December 2, 2002
    Date of Patent: April 29, 2008
    Assignee: Ovonyx, Inc.
    Inventor: Jon Maimon
  • Method for making tapered opening for programmable resistance memory element
    Publication number: 20060205108
    Abstract: A method for making a tapered opening. The defined tapered opening is useful for the fabrication of programmable resistance memory elements. The programmable resistance memory material may be a chalcogenide.
    Type: Application
    Filed: May 15, 2006
    Publication date: September 14, 2006
    Inventors: Jon Maimon, John Rodgers
  • Method for making tapered opening for programmable resistance memory element
    Patent number: 7045383
    Abstract: A method for making a tapered opening. The defined tapered opening is useful for the fabrication of programmable resistance memory elements. The programmable resistance memory material may be a chalcogenide.
    Type: Grant
    Filed: March 24, 2003
    Date of Patent: May 16, 2006
    Assignees: BAE Systems Information and Ovonyx, Inc, Electronic Systems Integration Inc.
    Inventors: Jon Maimon, John Rodgers
  • Programmable resistance memory element
    Patent number: 6972428
    Abstract: A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making the opening.
    Type: Grant
    Filed: August 9, 2004
    Date of Patent: December 6, 2005
    Assignee: Ovonyx, Inc.
    Inventor: Jon Maimon
  • Method for making programmable resistance memory element
    Patent number: 6927093
    Abstract: A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form a raised portion of a conductive layer. A programmable resistance material is formed in electrical contact with the raised portion.
    Type: Grant
    Filed: March 16, 2004
    Date of Patent: August 9, 2005
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Patrick Klersy, Stephen J. Hudgens, Jon Maimon
  • Programmable resistance memory element and method for making same
    Publication number: 20050012086
    Abstract: A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making the opening.
    Type: Application
    Filed: August 9, 2004
    Publication date: January 20, 2005
    Inventor: Jon Maimon
  • Method for making programmable resistance memory element
    Publication number: 20040175857
    Abstract: A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form a raised portion of a conductive layer. A programmable resistance material is formed in electrical contact with the raised portion.
    Type: Application
    Filed: March 16, 2004
    Publication date: September 9, 2004
    Inventors: Tyler Lowrey, Patrick Klersy, Stephen J. Hudgens, Jon Maimon
  • Programmable resistance memory element
    Patent number: 6774387
    Abstract: A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making the opening.
    Type: Grant
    Filed: February 8, 2002
    Date of Patent: August 10, 2004
    Assignee: Ovonyx, Inc.
    Inventor: Jon Maimon
  • Method for making programmable resistance memory element
    Patent number: 6750079
    Abstract: A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form raised portions on an edge of a conductive sidewall layer. The modified conductive sidewall layer is used as an electrode for the memory element.
    Type: Grant
    Filed: June 26, 2001
    Date of Patent: June 15, 2004
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Patrick Klersy, Stephen J. Hudgens, Jon Maimon
  • Method for making programmable resistance memory element
    Patent number: 6733956
    Abstract: A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode in a slot-like opening formed in a dielectric material. A method of making the opening using a silylated photoresist.
    Type: Grant
    Filed: February 8, 2002
    Date of Patent: May 11, 2004
    Assignee: Ovonyx, Inc.
    Inventors: Jon Maimon, Andrew Pomerene