Patents by Inventor Jon Paul Johnson

Jon Paul Johnson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Measurement of depth and energy of buried trap states in dielectric films by single electron tunneling force spectroscopy
    Patent number: 9052339
    Abstract: A single electron tunneling force spectroscopy (SETFS) system (10) can perform a series of surface potential charge measurements at an array of voltages (V) and tip-sample heights (Z). These measurements are combined with a tunneling model that includes the dependence of the tunneling probability on trap state depth and energy. Simultaneous measurement of the depth and energy of individual trap states in a sample, such as a dielectric film, with an atomic scale of spatial resolution can be achieved. When combined with two-dimensional trap state imaging, such techniques provide for three-dimensional imaging of electronic defect states with atomic scale spatial resolution.
    Type: Grant
    Filed: July 31, 2014
    Date of Patent: June 9, 2015
    Assignee: The University of Utah Research Foundation
    Inventors: Clayton Covey Williams, Jon Paul Johnson
  • Method for height control for single electron tunneling force spectroscopy and dynamic tunneling force microscopy
    Patent number: 9052337
    Abstract: Height control systems and/or methods are implemented for dynamic force tunneling microscopy and single electron tunneling force spectroscopy to improve their accuracy.
    Type: Grant
    Filed: July 31, 2014
    Date of Patent: June 9, 2015
    Assignee: The University of Utah Research Foundation
    Inventors: Clayton Covey Williams, Jon Paul Johnson
  • METHOD FOR HEIGHT CONTROL FOR SINGLE ELECTRON TUNNELING FORCE SPECTROSCOPY AND DYNAMIC TUNNELING FORCE MICROSCOPY
    Publication number: 20140366228
    Abstract: Height control systems and/or methods are implemented for dynamic force tunneling microscopy and single electron tunneling force spectroscopy to improve their accuracy.
    Type: Application
    Filed: July 31, 2014
    Publication date: December 11, 2014
    Inventors: Clayton Covey Williams, Jon Paul Johnson
  • MEASUREMENT OF DEPTH AND ENERGY OF BURIED TRAP STATES IN DIELECTRIC FILMS BY SINGLE ELECTRON TUNNELING FORCE SPECTROSCOPY
    Publication number: 20140345007
    Abstract: A single electron tunneling force spectroscopy (SETFS) system (10) can perform a series of surface potential charge measurements at an array of voltages (V) and tip-sample heights (Z). These measurements are combined with a tunneling model that includes the dependence of the tunneling probability on trap state depth and energy. Simultaneous measurement of the depth and energy of individual trap states in a sample, such as a dielectric film, with an atomic scale of spatial resolution can be achieved. When combined with two-dimensional trap state imaging, such techniques provide for three-dimensional imaging of electronic defect states with atomic scale spatial resolution.
    Type: Application
    Filed: July 31, 2014
    Publication date: November 20, 2014
    Inventors: Clayton Covey Williams, Jon Paul Johnson