Patents by Inventor Jon-Paul Maria
Jon-Paul Maria has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220363604Abstract: Embodiments relate to an improved hydroflux assisted densification process that introduces a transport phase (formed by the introduction of water during the process to suppress melting temperatures) for sintering, the transport phase being a non-aqueous solution. The process can facilitate sintering at low temperature ranges (at or below 300° C.) to yield densification>90% without the need for additional post-processing steps that otherwise would be needed if conventional processes were used. Control of the pressures and water content used during the process can enhance densification mechanisms related to dissolution-reprecipitation, allowing for a greater range of compositional spectra of materials that can be densified, a reduction of the amount of transport phase needed, a reduction of impurities and an improvement of properties in the densified material. Certain hydrated acetate powders can be used to generate a hydroxide mixture flux that is better for the low-temperature densification process.Type: ApplicationFiled: October 1, 2020Publication date: November 17, 2022Inventors: Jon-Paul Maria, Sarah Lowum, Richard Floyd
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Patent number: 10741649Abstract: A method of forming a metal oxide includes providing a reactive deposition atmosphere having an oxygen concentration of greater than about 20 percent in a chamber including a substrate therein. A pulsed DC signal is applied to a sputtering target comprising a metal, to sputter metal particles therefrom. A doping element may be supplied from a doping source (such as an alloyed metal target) in the reaction chamber. An electrically conductive metal oxide film comprising an oxide of the metal is deposited on the substrate responsive to a reaction between the metal particles and the reactive deposition atmosphere. Related devices are also discussed.Type: GrantFiled: May 24, 2018Date of Patent: August 11, 2020Assignee: NORTH CAROLINA STATE UNIVERSITYInventors: Edward Sachet, Christopher Shelton, Jon-Paul Maria, Kyle Patrick Kelley, Evan Lars Runnerstrom
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Patent number: 10468548Abstract: A detector that includes an all-oxide, Schottky-type heterojunction. The “metal” side of the heterojunction is formed, for example, from a dysprosium (“Dy”) doped cadmium oxide (“CdO”) (i.e., CdO:Dy). The semiconductor side of the heterojunction is formed, for example, from cadmium magnesium oxide (“CdMgO”). On the metal side of the junction, “hot” electrons are created through the excitation of surface plasmon polaritons by infrared radiation. The hot electrons are able to cross the Schottky-type barrier of the heterojunction into the conduction band of the semiconductor where they can be detected. The working wavelength of infrared radiation that is being detected can be adjusted or tuned by modifying the Dy content of Dy-doped CdO. The height of the Schottky-type barrier can also be adjusted by modifying the composition of CdMgO, which allows for the optimization of the Schottky-type barrier height for a given working wavelength.Type: GrantFiled: April 29, 2016Date of Patent: November 5, 2019Assignee: North Carolina State UniversityInventors: Edward Sachet, Jon-Paul Maria
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Patent number: 10158040Abstract: Polaritonic hot electron infrared photodetector that detect infrared radiation. In one implementation, the polaritonic hot electron infrared photodetector includes a first contact layer, a second contact layer, a first dielectric layer, a second dielectric layer, and a conductor layer. The first dielectric layer is coupled between the first contact layer and the second contact layer. The second dielectric layer is coupled between the first dielectric layer and the second contact layer. The conductor layer is coupled between the first dielectric layer and the second dielectric layer. Infrared radiation incident upon the conductor layer is operable to create hot carriers that are injected from a conduction band of the conductor layer to a conduction band of the second contact layer.Type: GrantFiled: July 7, 2017Date of Patent: December 18, 2018Assignee: North Carolina State UniversityInventors: Edward Sachet, Jon-Paul Maria, Christopher Shelton
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Publication number: 20180350922Abstract: A method of forming a metal oxide includes providing a reactive deposition atmosphere having an oxygen concentration of greater than about 20 percent in a chamber including a substrate therein. A pulsed DC signal is applied to a sputtering target comprising a metal, to sputter metal particles therefrom. A doping element may be supplied from a doping source (such as an alloyed metal target) in the reaction chamber. An electrically conductive metal oxide film comprising an oxide of the metal is deposited on the substrate responsive to a reaction between the metal particles and the reactive deposition atmosphere. Related devices are also discussed.Type: ApplicationFiled: May 24, 2018Publication date: December 6, 2018Inventors: Edward Sachet, Christopher Shelton, Jon-Paul Maria, Kyle Patrick Kelley, Evan Lars Runnerstrom
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Patent number: 9995858Abstract: IR emission devices comprising an array of polaritonic IR emitters arranged on a substrate, where the emitters are coupled to a heater configured to provide heat to one or more of the emitters. When the emitters are heated, they produce an infrared emission that can be polarized and whose spectral emission range, emission wavelength, and/or emission linewidth can be tuned by the polaritonic material used to form the elements of the array and/or by the size and/or shape of the emitters. The IR emission can be modulated by the induction of a strain into a ferroelectric, a change in the crystalline phase of a phase change material and/or by quickly applying and dissipating heat applied to the polaritonic nanostructure. The IR emission can be designed to be hidden in the thermal background so that it can be observed only under the appropriate filtering and/or demodulation conditions.Type: GrantFiled: December 8, 2017Date of Patent: June 12, 2018Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Joshua D. Caldwell, Virginia D. Wheeler, Marc Currie, Igor Vurgaftman, Jon-paul Maria
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Patent number: 9971071Abstract: IR emission devices comprising an array of polaritonic IR emitters arranged on a substrate, where the emitters are coupled to a heater configured to provide heat to one or more of the emitters. When the emitters are heated, they produce an infrared emission that can be polarized and whose spectral emission range, emission wavelength, and/or emission linewidth can be tuned by the polaritonic material used to form the elements of the array and/or by the size and/or shape of the emitters. The IR emission can be modulated by the induction of a strain into a ferroelectric, a change in the crystalline phase of a phase change material and/or by quickly applying and dissipating heat applied to the polaritonic nanostructure. The IR emission can be designed to be hidden in the thermal background so that it can be observed only under the appropriate filtering and/or demodulation conditions.Type: GrantFiled: October 26, 2017Date of Patent: May 15, 2018Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Joshua D. Caldwell, Virginia D. Wheeler, Marc Currie, Igor Vurgaftman, Jon-paul Maria
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Publication number: 20180100955Abstract: IR emission devices comprising an array of polaritonic IR emitters arranged on a substrate, where the emitters are coupled to a heater configured to provide heat to one or more of the emitters. When the emitters are heated, they produce an infrared emission that can be polarized and whose spectral emission range, emission wavelength, and/or emission linewidth can be tuned by the polaritonic material used to form the elements of the array and/or by the size and/or shape of the emitters. The IR emission can be modulated by the induction of a strain into a ferroelectric, a change in the crystalline phase of a phase change material and/or by quickly applying and dissipating heat applied to the polaritonic nanostructure. The IR emission can be designed to be hidden in the thermal background so that it can be observed only under the appropriate filtering and/or demodulation conditions.Type: ApplicationFiled: December 8, 2017Publication date: April 12, 2018Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Joshua D. Caldwell, Virginia D. Wheeler, Marc Currie, Igor Vurgaftman, Jon-Paul Maria
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Publication number: 20180045861Abstract: IR emission devices comprising an array of polaritonic IR emitters arranged on a substrate, where the emitters are coupled to a heater configured to provide heat to one or more of the emitters. When the emitters are heated, they produce an infrared emission that can be polarized and whose spectral emission range, emission wavelength, and/or emission linewidth can be tuned by the polaritonic material used to form the elements of the array and/or by the size and/or shape of the emitters. The IR emission can be modulated by the induction of a strain into a ferroelectric, a change in the crystalline phase of a phase change material and/or by quickly applying and dissipating heat applied to the polaritonic nanostructure. The IR emission can be designed to be hidden in the thermal background so that it can be observed only under the appropriate filtering and/or demodulation conditions.Type: ApplicationFiled: October 26, 2017Publication date: February 15, 2018Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Joshua D. Caldwell, Virginia D. Wheeler, Marc Currie, Igor Vurgaftman, Jon-paul Maria
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Patent number: 9870839Abstract: IR emission devices comprising an array of polaritonic IR emitters arranged on a substrate, where the emitters are coupled to a heater configured to provide heat to one or more of the emitters. When the emitters are heated, they produce an infrared emission that can be polarized and whose spectral emission range, emission wavelength, and/or emission linewidth can be tuned by the polaritonic material used to form the elements of the array and/or by the size and/or shape of the emitters. The IR emission can be modulated by the induction of a strain into a ferroelectric, a change in the crystalline phase of a phase change material and/or by quickly applying and dissipating heat applied to the polaritonic nanostructure. The IR emission can be designed to be hidden in the thermal background so that it can be observed only under the appropriate filtering and/or demodulation conditions.Type: GrantFiled: January 27, 2017Date of Patent: January 16, 2018Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Joshua D. Caldwell, Virginia D. Wheeler, Marc Currie, Igor Vurgaftman, Jon-paul Maria
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Publication number: 20180013031Abstract: Polaritonic hot electron infrared photodetector that detect infrared radiation. In one implementation, the polaritonic hot electron infrared photodetector includes a first contact layer, a second contact layer, a first dielectric layer, a second dielectric layer, and a conductor layer. The first dielectric layer is coupled between the first contact layer and the second contact layer. The second dielectric layer is coupled between the first dielectric layer and the second contact layer. The conductor layer is coupled between the first dielectric layer and the second dielectric layer. Infrared radiation incident upon the conductor layer is operable to create hot carriers that are injected from a conduction band of the conductor layer to a conduction band of the second contact layer.Type: ApplicationFiled: July 7, 2017Publication date: January 11, 2018Inventors: Edward Sachet, Jon-Paul Maria, Christopher Shelton
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Publication number: 20170221596Abstract: IR emission devices comprising an array of polaritonic IR emitters arranged on a substrate, where the emitters are coupled to a heater configured to provide heat to one or more of the emitters. When the emitters are heated, they produce an infrared emission that can be polarized and whose spectral emission range, emission wavelength, and/or emission linewidth can be tuned by the polaritonic material used to form the elements of the array and/or by the size and/or shape of the emitters. The IR emission can be modulated by the induction of a strain into a ferroelectric, a change in the crystalline phase of a phase change material and/or by quickly applying and dissipating heat applied to the polaritonic nanostructure. The IR emission can be designed to be hidden in the thermal background so that it can be observed only under the appropriate filtering and/or demodulation conditions.Type: ApplicationFiled: January 27, 2017Publication date: August 3, 2017Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Joshua D. Caldwell, Virginia D. Wheeler, Marc Currie, Igor Vurgaftman, Jon-paul Maria
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Publication number: 20160322530Abstract: A detector that includes an all-oxide, Schottky-type heterojunction. The “metal” side of the heterojunction is formed, for example, from a dysprosium (“Dy”) doped cadmium oxide (“CdO”) (i.e., CdO:Dy). The semiconductor side of the heterojunction is formed, for example, from cadmium magnesium oxide (“CdMgO”). On the metal side of the junction, “hot” electrons are created through the excitation of surface plasmon polaritons by infrared radiation. The hot electrons are able to cross the Schottky-type barrier of the heterojunction into the conduction band of the semiconductor where they can be detected. The working wavelength of infrared radiation that is being detected can be adjusted or tuned by modifying the Dy content of Dy-doped CdO. The height of the Schottky-type barrier can also be adjusted by modifying the composition of CdMgO, which allows for the optimization of the Schottky-type barrier height for a given working wavelength.Type: ApplicationFiled: April 29, 2016Publication date: November 3, 2016Inventors: Edward Sachet, Jon-Paul Maria
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Publication number: 20160168436Abstract: An equimolar formulation of three or more ionic or partially ionic compounds stabilized by configurational entropy into a homogeneous crystal is provided.Type: ApplicationFiled: December 14, 2015Publication date: June 16, 2016Inventors: Jon-Paul Maria, Elizabeth Dickey, Trent Borman
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Patent number: 8710355Abstract: Photovoltaic cells, including silicon solar cells, and methods and compositions for making such photovoltaic cells are provided. A silicon substrate having p-type silicon base and an n-type silicon layer is provided with a silicon nitride layer, an exchange metal in contact with the silicon nitride layer, and a non-exchange metal in contact with the exchange metal. This assembly is fired to form a metal silicide contact on the silicon substrate, and a conductive metal electrode in contact with the metal silicide contact. The exchange metal is from nickel, cobalt, iron, manganese, molybdenum, and combinations thereof, and the non-exchange metal is from silver, copper, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, gold, cadmium, beryllium, and combinations thereof.Type: GrantFiled: November 13, 2009Date of Patent: April 29, 2014Assignees: E I du Pont de Nemours and CompanyInventors: William J. Borland, Howard David Glicksman, Jon-Paul Maria
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Publication number: 20130000709Abstract: Photovoltaic cells including silicon solar cells are provided. A silicon substrate having an n-type silicon layer is provided with a silicon nitride layer, a reactive metal in contact with said silicon nitride layer, and a non-reactive metal in contact with the reactive metal. This assembly is fired to form a low Shottky barrier height contact comprised of metal nitride, and optionally metal silicide, on the silicon substrate, and a conductive metal electrode in contact with said low Shottky barrier height contact. The reactive metal may be titanium, zirconium, hafnium, vanadium, niobium, and tantalum, and combinations thereof, and the non-reactive metal may be silver, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, nickel, phosphorus, gold, cadmium, berrylium, and combinations thereof.Type: ApplicationFiled: September 14, 2012Publication date: January 3, 2013Applicant: E I DU PONT DE NEMOURS AND COMPANY NORTH CAROLINA STATE UNIVERSITYInventors: WILLIAM J. BORLAND, Jon-Paul Maria
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Patent number: 8294024Abstract: Photovoltaic cells, including silicon solar cells, and methods and compositions for making such photovoltaic cells are provided. A silicon substrate having an n-type silicon layer is provided with a silicon nitride layer, a reactive metal in contact with said silicon nitride layer, and a non-reactive metal in contact with the reactive metal. This assembly is fired to form a low Schottky barrier height contact comprised of metal nitride, and optionally metal silicide, on the silicon substrate, and a conductive metal electrode in contact with said low Schottky barrier height contact. The reactive metal may be titanium, zirconium, hafnium, vanadium, niobium, and tantalum, and combinations thereof, and the non-reactive metal may be silver, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, nickel, phosphorus, gold, cadmium, berrylium, and combinations thereof.Type: GrantFiled: August 5, 2009Date of Patent: October 23, 2012Assignees: E I du Pont de Nemours and Company, North Carolina State UniversityInventors: William J. Borland, Jon-Paul Maria
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Patent number: 8183108Abstract: A method of making dense dielectrics layers via chemical solution deposition by adding inorganic glass fluxed material to high dielectric constant compositions, depositing the resultant mixture onto a substrate and annealing the substrate at temperatures between the softening point of the inorganic glass flux and the melting point of the substrate. A method of making a capacitor comprising a dense dielectric layer.Type: GrantFiled: June 15, 2006Date of Patent: May 22, 2012Assignee: CDA Processing Limited Liability CompanyInventors: William J. Borland, Seigi Suh, Jon-Paul Maria, Jon Fredrick Ihlefeld, Ian Burn
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Publication number: 20100230149Abstract: A method of making dense dielectrics layers via chemical solution deposition by adding inorganic glass fluxed material to high dielectric constant compositions, depositing the resultant mixture onto a substrate and annealing the substrate at temperatures between the softening point of the inorganic glass flux and the melting point of the substrate. A method of making a capacitor comprising a dense dielectric layer.Type: ApplicationFiled: June 15, 2006Publication date: September 16, 2010Inventors: William Borland, Seigi Suh, Jon-Paul Maria, Jon Fredrick Ihlefeld, Ian Burn
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Publication number: 20100154875Abstract: Photovoltaic cells, including silicon solar cells, and methods and compositions for making such photovoltaic cells are provided. A silicon substrate having p-type silicon base and an n-type silicon layer is provided with a silicon nitride layer, an exchange metal in contact with the silicon nitride layer, and a non-exchange metal in contact with the exchange metal. This assembly is fired to form a metal silicide contact on the silicon substrate, and a conductive metal electrode in contact with the metal silicide contact. The exchange metal is from nickel, cobalt, iron, manganese, molybdenum, and combinations thereof, and the non-exchange metal is from silver, copper, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, gold, cadmium, berrylium, and combinations thereof.Type: ApplicationFiled: November 13, 2009Publication date: June 24, 2010Applicant: E. I. DU PONT DE NEMOURS AND COMPNAY & NORTH CAROLINA STATE UNIVERSITYInventors: William J. Borland, Howard David Glicksman, Jon-Paul Maria