Abstract: A holster which obscures presence and identity of the handgun held by the holster is disclosed. The holster comprises an L-shaped frame having a pin. The handgun is installed on the holster by inserting the pin into the barrel of the handgun. The L-shaped frame combined with the installed handgun collectively form a parallelepiped of thickness equal to that of the handgun. The handgun is disguised by visually meshing in complementary fashion with the holster, when concealed beneath a fabric of an article of apparel.

Abstract: A holster which obscures presence and identity of the handgun held by the holster is disclosed. The holster comprises an L-shaped frame having a pin. The handgun is installed on the holster by inserting the pin into the barrel of the handgun. The L-shaped frame combined with the installed handgun collectively form a parallelepiped of thickness equal to that of the handgun. The handgun is disguised by visually meshing in complementary fashion with the holster, when concealed beneath a fabric of an article of apparel.

Abstract: A holster which obscures presence and identity of the handgun held by the holster is disclosed. The holster comprises an L-shaped frame having a pin. The handgun is installed on the holster by inserting the pin into the barrel of the handgun. The L-shaped frame combined with the installed handgun collectively form a parallelepiped of thickness equal to that of the handgun. The handgun is disguised by visually meshing in complementary fashion with the holster, when concealed beneath a fabric of an article of apparel.

Abstract: A wafer is characterized in that the wafer has a non-uniform distribution of crystal lattice vacancies, wherein the concentration of crystal lattice vacancies in the bulk layer are greater than the concentration of crystal lattice vacancies in the front surface layer. In addition, the front surface of the wafer has an epitaxial layer, having a thickness of less than about 2.0 ?m, deposited thereon. A process comprises heating a surface of a wafer starting material to remove a silicon oxide layer from the surface and depositing an epitaxial layer onto the surface to form an epitaxial wafer. The epitaxial wafer is then heated to a soak temperature of at least about 1175° C. while exposing the epitaxial layer to an oxidizing atmosphere comprising an oxidant, and the wafer is cooled at a rate of at least about 10° C./sec.