Patents by Inventor Jon W. Byrn

Jon W. Byrn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8239700
    Abstract: Various embodiments of the present invention provide systems and methods for governing power dissipation in a semiconductor device. For example, various embodiments of the present invention provide semiconductor devices that include a first function circuit, a second function circuit, and a power state change control circuit. The power state change control circuit is operable to determine a combination of power states of the first function circuit and the second function circuit that provides an overall power dissipation within a power dissipation level.
    Type: Grant
    Filed: April 17, 2009
    Date of Patent: August 7, 2012
    Assignee: LSI Corporation
    Inventors: George Nation, Jon W. Byrn, Gary Delp
  • Publication number: 20100269074
    Abstract: Various embodiments of the present invention provide systems and methods for improved semiconductor design. For example, various embodiments of the present invention provide methods for semiconductor design that include receiving a semiconductor design with at least a first function circuit and a second function circuit; simulating the semiconductor design using a first instruction and a second instruction; determining a power state transition between the first instruction and the second instruction; and augmenting the semiconductor design to implement the determined power state transition. Simulating the semiconductor design using a first instruction and a second instruction identifies an indication of a first subset of the first function circuit and the second function circuit used in executing the first instruction and a second subset of the first function circuit and the second function circuit used in executing the second instruction.
    Type: Application
    Filed: April 17, 2009
    Publication date: October 21, 2010
    Inventors: George Nation, Jon W. Byrn, Gary Delp
  • Publication number: 20100264983
    Abstract: Various embodiments of the present invention provide systems and methods for governing power dissipation in a semiconductor device. For example, various embodiments of the present invention provide semiconductor devices that include a first function circuit, a second function circuit, and a power state change control circuit. The power state change control circuit is operable to determine a combination of power states of the first function circuit and the second function circuit that provides an overall power dissipation within a power dissipation level.
    Type: Application
    Filed: April 17, 2009
    Publication date: October 21, 2010
    Inventors: George Nation, Jon W. Byrn, Gary Delp
  • Publication number: 20100268917
    Abstract: Various embodiments of the present invention provide systems and methods for ramping current usage in a semiconductor device. For example, various embodiments of the present invention provide semiconductor devices that include at least a first function circuit and a second function circuit, and a power state change control circuit. The power state change control circuit is operable to transition the power state of the first function circuit from a reduced power state to an operative power state, and to transition the second function circuit from a reduced power state to an operative power state. Transition of the power state of at least one of the first function circuit and the second function circuit is done in at least a first stage at a first time and a second stage at a second time, with the second time being after the first time.
    Type: Application
    Filed: April 17, 2009
    Publication date: October 21, 2010
    Inventors: George Nation, Jon W. Byrn, Gary Delp