Abstract: An organic floating gate memory device having protein and a method of fabricating the same are disclosed.

Abstract: A method of improving efficiency of solar cells made of crystalline silicon, including monocrystalline silicon, multicrystalline silicon and polycrystalline silicon is provided. In the method, a negative bias pulse is applied to solar cells at a predetermined voltage, a predetermined frequency, and a predetermined pulse width while immersing the solar cells in a hydrogen plasma. Hydrogen ions are attracted and quickly implanted into the solar cells. Thus, the passivation of crystal defects in the solar cells can be realized in a short period. Meanwhile, the properties of an antireflection layer cannot be damaged as proper operating parameters are used. Consequently, the serious resistance of the solar cells can be significantly reduced and the filling factor increases as a result. Further, the short-circuit current and the open-circuit voltage can be increased. Therefore, the efficiency can be enhanced.

Abstract: An attenuating phase shifting photomask is formed using attenuating phase shifting composite material combining the optical properties of a first material having a high extinction coefficient and a second material having a high index of refraction. The first material is LaNiO.sub.3 and the second material is either TiO.sub.2 or Ta.sub.2 O.sub.5. The first and second materials are combined to produce composites of either (LaNiO.sub.3).sub.x (TiO.sub.2).sub.1-x or (LaNiO.sub.3).sub.x (Ta.sub.2 O.sub.5).sub.1-x to form attenuating phase shifting blanks and masks. Co-deposition of LaNiO.sub.3 and either TiO.sub.2 or Ta.sub.2 O.sub.5 uses rf-magnetron sputtering to form the (LaNiO.sub.3).sub.x (TiO.sub.2).sub.1-x or (LaNiO.sub.3).sub.x (Ta.sub.2 O.sub.5).sub.1-x films on a transparent quartz substrate.

Abstract: An attenuating phase shifting photomask is formed using attenuating phase shifting composite material combining the optical properties of a first material having a high extinction coefficient and a second material having a high index of refraction. The first material is LaNiO.sub.3 and the second material is TiO.sub.2. The first and second materials are combined as a composite of (LaNiO.sub.3).sub.x (TiO.sub.2).sub.1-x to form attenuating phase shifting blanks and masks. Co-deposition of LaNiO.sub.3 and TiO.sub.2 using rf magnetron sputtering is used to form the (LaNiO.sub.3).sub.x (TiO.sub.2).sub.1-x film on a transparent quartz substrate.

Abstract: An attenuated Phase Shift Mask (PSM) blank and an attenuated Phase Shift Mask (PSM), and a method by which the attenuated Phase Shift Mask (PSM) blank and the attenuated Phase Shift Mask (PSM) may be formed. To form the attenuated Phase Shift Mask (PSM) blank there is first provided a transparent substrate. Formed upon the transparent substrate is a tantalum-silicon oxide blanket semi-transparent shifter layer which has the formula,Ta.sub.x Si.sub.y O.sub.1-x-ywherein 0.1<x<0.3 and 0.03<y<0.1. To form the attenuated Phase Shift Mask (PSM) from the attenuated Phase Shift Mask (PSM) blank, the tantalum-silicon oxide blanket semi-transparent shifter layer is patterned to form a tantalum-silicon oxide patterned semi-transparent shifter layer.

Abstract: Polysilicon contacts for silicon devices such as bipolar junction transistors and silicon solar cells are fabricated in a two step anneal process to improve contact resistance and emitter saturation current density. After a silicon oxide layer is formed on a surface of a silicon substrate, a plurality of openings are formed there through to expose a plurality of contact surfaces on the surface of the silicon substrate. A thin thermally grown silicon oxide layer is then formed on the contact surfaces after which an undoped layer of polysilicon material is formed over the silicon oxide layers. The structure is then annealed at approximately 1050.degree. C. to break the thermally grown silicon oxide layer. Thereafter, a first layer of doped glass is formed over the silicon oxide surface and selectively etched to remove the first layer of glass from a first group of contact surfaces. A second layer of doped glass is then formed over the first group of contact surfaces and over the first layer of doped glass.

Abstract: The interface of a silicon oxide passivation layer and a silicon substrate in a silicon solar cell is stabilized by covering the silicon oxide passivation layer with a layer of undoped or phosphorus doped polycrystalline silicon. A second layer of silicon oxide is formed by deposition on the surface of the phosphorus doped polycrystalline and enhances the anti-reflection characteristics of the composite structure.