Abstract: A method is provided for measuring a semiconductor structure, which allows the spatially resolved determination of dark saturation current and/or series resistance and/or resistance of the emitter layer of the semiconductor structure via luminescence measurement, without restrictions being given such that one of the parameters must be known in advance or spatially consistent.

Abstract: A method for spatially determining the series resistance of a semiconductor structure by generating luminescent radiation in the semiconductor structure under measurement conditions A and B, by determining a local calibration parameter CV,i for a plurality of prescribed locations of the semiconductor structure and determining local series resistances RS,i for a plurality of prescribed locations of the semiconductor structure. It is essential that the local series resistances RS,i are each determined as a function of a global series resistance RSg of the semiconductor structure that is identical for all local series resistances.

Abstract: The invention relates to a method for measuring a semiconductor structure, which has an emitter and a base, and which is a solar cell or a precursor of a solar cell, comprising the following steps: A) Generating luminescence radiation in the semiconductor structure, and spatially resolved measuring of the luminescence radiation emitted by the semiconductor structure, wherein a first measurement is conducted under a first measurement condition a, and depending on the measurement data that are obtained at least from the first measurement, a first spatially resolved, voltage-calibrated image Va(xi) for a plurality of local points xi of the solar cell is determined from the measurement data obtained in step A; B) Determining spatially resolved properties of the semiconductor structure with respect to the spatially resolved dark saturation current j0(xi), and/or the spatially resolved emitter layer resistance ?(x1), and/or the spatially resolved, local series resistance Rs(xi) for the plurality of local points xi,

Abstract: A method for spatially determining the series resistance of a semiconductor structure by generating luminescent radiation in the semiconductor structure under measurement conditions A and B, by determining a local calibration parameter CV,i for a plurality of prescribed locations of the semiconductor structure and determining local series resistances RS,i for a plurality of prescribed locations of the semiconductor structure. It is essential that the local series resistances RS,i are each determined as a function of a global series resistance RSg of the semiconductor structure that is identical for all local series resistances.