Abstract: The present invention relates to a method for selective etching of a nanostructure (10). The method comprising: providing the nanostructure (10) having a main surface (12) delimited by, in relation to the main surface (12), inclined surfaces (14); and subjecting the nanostructure (10) for a dry etching, wherein the dry etching comprises: subjecting the nanostructure (10) for a low energy particle beam (20) having a direction perpendicular to the main surface (12); whereby a recess (16) in the nanostructure (10) is formed, the recess (16) having its opening at the main surface (12) of the nanostructure (10).

Abstract: The present invention relates to a method for selective etching of a nanostructure (10). The method comprising: providing the nanostructure (10) having a main surface (12) delimited by, in relation to the main surface (12), inclined surfaces (14); and subjecting the nanostructure (10) for a dry etching, wherein the dry etching comprises: subjecting the nanostructure (10) for a low energy particle beam (20) having a direction perpendicular to the main surface (12); whereby a recess (16) in the nanostructure (10) is formed, the recess (16) having its opening at the main surface (12) of the nanostructure (10).

Abstract: The present invention relates to a method for selective etching of a nanostructure (10). The method comprising: providing the nanostructure (10) having a main surface (12) delimited by, in relation to the main surface (12), inclined surfaces (14); and subjecting the nanostructure (10) for a dry etching, wherein the dry etching comprises: subjecting the nanostructure (10) for a low energy particle beam (20) having a direction perpendicular to the main surface (12); whereby a recess (16) in the nanostructure (10) is formed, the recess (16) having its opening at the main surface (12) of the nanostructure (10).

Abstract: The present invention relates to a method for selective etching of a nanostructure (10). The method comprising: providing the nanostructure (10) having a main surface (12) delimited by, in relation to the main surface (12), inclined surfaces (14); and subjecting the nanostructure (10) for a dry etching, wherein the dry etching comprises: subjecting the nanostructure (10) for a low energy particle beam (20) having a direction perpendicular to the main surface (12); whereby a recess (16) in the nanostructure (10) is formed, the recess (16) having its opening at the main surface (12) of the nanostructure (10).

Abstract: The present invention relates to a method for selective etching of a nanostructure (10). The method comprising: providing the nanostructure (10) having a main surface (12) delimited by, in relation to the main surface (12), inclined surfaces (14); and subjecting the nanostructure (10) for a dry etching, wherein the dry etching comprises: subjecting the nanostructure (10) for a low energy particle beam (20) having a direction perpendicular to the main surface (12); whereby a recess (16) in the nanostructure (10) is formed, the recess (16) having its opening at the main surface (12) of the nanostructure (10).

Abstract: In a method for producing a conductive layer a substrate is provided. On the substrate, a layer includes at least two different metal nitrides. In one embodiment, on a surface of the substrate a first metal nitride layer is deposited, followed by a second metal nitride layer formed thereon. A third metal layer is then deposited on a surface of the second metal nitride layer.

Abstract: A method of fabricating an integrated circuit, including a functional layer on a substrate is disclosed. One embodiment includes providing a substrate in a process atmosphere. A first precursor and a second precursor are provided in the process atmosphere. The first precursor is removed from the process atmosphere. A third precursor is provided in the process atmosphere.

Abstract: An integrated circuit including a dielectric layer and a method for producing an integrated circuit. In one embodiment, a dielectric layer is deposited in a process atmosphere. The process atmosphere includes a first starting component at a first point in time, a second starting component at a second point in time and a third starting component at a third point in time. The third starting component includes a halogen.

Abstract: The invention refers to a selective deposition method. A substrate comprising at least one structured surface is provided. The structured surface comprises a first area and a second area. The first area is selectively passivated regarding reactants of a first deposition technique and the second area is activated regarding the reactants the first deposition technique. A passivation layer on the second area is deposited via the first deposition technique. The passivation layer is inert regarding a precursors selected from a group of oxidizing reactants. A layer is deposited in the second area using a second atomic layer deposition technique as second deposition technique using the precursors selected form the group of oxidizing reactants.

Abstract: The present invention relates to a method for depositing a dielectric material comprising a transition metal oxide. In an initial step, a substrate is provided. In a further step, a first precursor comprising a transition metal containing compound, and a second precursor predominantly comprising at least one of water vapor, ozone, oxygen, or oxygen plasma are sequentially applied for depositing above the substrate a layer of a transition metal containing material. In another step, a third precursor comprising a dopant containing compound, and a fourth precursor predominantly comprising at least one of water vapor, ozone, oxygen, or oxygen plasma are sequentially applied for depositing above the substrate a layer of a dopant containing material. The transition metal comprises at least one of zirconium and hafnium. The dopant comprises at least one of barium, strontium, calcium, niobium, bismuth, magnesium, and cerium.

Abstract: The present invention relates to a deposition of a dielectric layer. On a substrate having a structured area a crystallization seed layer for a dielectric layer is deposited via an atomic layer deposition technique employing a first and a second precursor on the structured area of the substrate. The first pre-cursor is a compound having the constitutional formula M1(R1Cp)x(R2)4-x, wherein M1 is one of hafnium and zirconium, Cp is cyclopentadienyl, R1 is independently selected of methyl, ethyl and alkyl, R2 is independently selected of hydrogen, methyl, ethyl, alkyl and alkoxyl, and x is one or two. The dielectric layer is deposited on the crystallization seed layer via an atomic layer deposition technique employing a third and a forth precursor wherein the third pre-cursor being a compound having the constitutional formula M2 R3 R4 R5 R6, wherein M2 is one of hafnium or zirconium and R3, R4, R5, and R6 are independently selected of alkyl amines.

Abstract: A method and apparatus for providing a gaseous precursor for a coating process. A starting material having a pulverulent precursor material is heated in order to cause a vaporization of the pulverulent precursor material, whereby a gaseous precursor is produced. A carrier gas is flowed past the starting material at a distance minimizing or preventing a convective gas flow, while transporting the gaseous precursor to a processing region containing a wafer to be coated.

Abstract: The atomic layer deposition process according to the invention provides the following steps for the production of homogeneous layers on a substrate. The substrate is introduced into a reaction chamber. A first precursor is introduced into the reaction chamber, which first precursor reacts on the surface of the substrate to form an intermediate product. A second precursor is introduced into the reaction chamber, which second precursor has a low sticking coefficient and reacts with part of the intermediate product to form a first product. A third precursor is introduced into the reaction chamber, which third precursor has a high sticking coefficient and reacts with the remaining part of the intermediate product to form a second product. The second precursor and its first product reduce the effective sticking coefficient of the third precursor by partially covering the surface.

Abstract: In a method for producing a conductive layer a substrate is provided. On the substrate, a layer comprised of at least two different metal nitrides is provided. Especially, on a surface of the substrate a first metal nitride layer, on a surface of the first metal nitride layer a second metal nitride layer, and on a surface of the second metal nitride layer a third metal nitride layer is deposited.