Abstract: Embodiments of the present invention provide for maintaining a level set of a pulmonary artery catheterization apparatus that includes a pulmonary artery pressure sensor in communication with a pulmonary artery catherization manifold affixed to a pulmonary artery catheter. The method includes calibrating leveling of the pulmonary artery pressure sensor (at the level of the right atrium) with the pulmonary artery catheterization manifold by recording a vertical level of a leveling base positioned at a common level to the manifold, relative to a vertical level of a leveling sensor positioned at a common level to the pulmonary artery pressure sensor. The method further includes monitoring a difference between the recorded vertical level of the leveling base relative to the vertical level of the leveling sensor. Finally, the method includes generating an alert in a user interface element of the leveling sensor in response to the monitored difference exceeding a threshold value.

Abstract: Embodiments of the present invention provide for maintaining a level set of a pulmonary artery catheterization apparatus that includes a pulmonary artery pressure sensor in communication with a pulmonary artery catherization manifold affixed to a pulmonary artery catheter. The method includes calibrating leveling of the pulmonary artery pressure sensor (at the level of the right atrium) with the pulmonary artery catheterization manifold by recording a vertical level of a leveling base positioned at a common level to the manifold, relative to a vertical level of a leveling sensor positioned at a common level to the pulmonary artery pressure sensor. The method further includes monitoring a difference between the recorded vertical level of the leveling base relative to the vertical level of the leveling sensor. Finally, the method includes generating an alert in a user interface element of the leveling sensor in response to the monitored difference exceeding a threshold value.

Abstract: An integrated circuit device having a semiconductor device and an encapsulating material on at least a portion of the semiconductor device and a method for encapsulating an integrated circuit device is disclosed. The encapsulating material includes a plurality of nanoparticles.

Abstract: An integrated circuit device having a semiconductor device and an encapsulating material on at least a portion of the semiconductor device and a method for encapsulating an integrated circuit device is disclosed. The encapsulating material includes a plurality of nanoparticles.

Abstract: A method for slowing the degradation of a polymeric container, the method including forming the polymeric container from a composition including a plurality of nanoparticles dispersed therein.

Abstract: A formed body in the shape of a useful article formed from at least one material including a plurality of nanoparticles dispersed in the at least one material, wherein the plurality of nanoparticles are capable of inhibiting transmission of UV radiation.

Abstract: An integrated circuit device having a semiconductor device and an encapsulating material on at least a portion of the semiconductor device and a method for encapsulating an integrated circuit device is disclosed. The encapsulating material includes a plurality of nanoparticles.

Abstract: An optical recording medium including a substrate that includes a substrate material having a refractive index and a plurality of nanoparticles of a material having a refractive index greater than that of the substrate material. The nanoparticles are included in the substrate material at such a density that the refractive index of the substrate is greater than that of the substrate material without decreasing the transparency of the substrate. The optical recording medium also includes a recording layer, which may further include encoded information, and a protective layer.

Abstract: In accordance with an embodiment of the invention, there is a material comprising an amorphous material and a dopant wherein the amorphous material displays magnetic behavior.

Abstract: The present invention pertains to methods for altering the magnetic properties of materials and the novel materials produced by these methods. The methods of this invention concern the application of high voltage, high frequency sparks to the surface of materials in order to alter the magnetic properties of the materials. Specially, the present invention can be applied to diamagnetic silicon to produce ferromagnetic spark-processed silicon.

Abstract: The present invention pertains to methods for altering the magnetic properties of materials and the novel materials produced by these methods. The methods of this invention concern the application of high voltage, high frequency sparks to the surface of materials in order to alter the magnetic properties of the materials. Specially, the present invention can be applied to diamagnetic silicon to produce ferromagnetic spark-processed silicon.

Abstract: The present invention pertains to methods for altering the magnetic properties of materials and the novel materials produced by these methods. The methods of this invention concern the application of high voltage, high frequency sparks to the surface of materials in order to alter the magnetic properties of the materials. Specially, the present invention can be applied to diamagnetic silicon to produce ferromagnetic spark-processed silicon.

Abstract: Methods for altering the magnetic properties of materials and the novel materials produced by these methods. The methods concern the application of high voltage, high frequency sparks to the surface of materials in order to alter the magnetic properties of the materials. Specificaly this method can be applied to diamagnetic silicon to produce ferromagnetic spark-processed silicon.