Abstract: A system and method for operating and fabricating microelectronics for use in extreme-temperature operating environments is disclosed. The microelectronics are designed for operating at conditions that may include temperatures greater than three hundred degrees Celsius. The system and method include one or more modules that each comprise a substrate, a package lid, and an integrated circuit die. A package lid that encloses the integrated circuit die and is disposed on the opposite side of the integrated circuit die from that of a substrate. A thermo-mechanical attachment layer is provided between the integrated circuit die and package lid. Additionally, one or more microfabricated metal pillars that incorporate both thermo-mechanical pathways and signal pathways are provided to connect the integrated circuit die to the substrate.

Abstract: Electronic devices such as transistors are disclosed. The electronic device includes an electrically conductive gate electrode, an anodized layer disposed on the gate electrode, a dielectric layer disposed on the anodized layer, and a semiconductor oxide layer that has a channel region. The channel region is disposed on the dielectric layer and has an internal resistance. The internal resistance of the channel can change when an electrical signal is applied to the gate electrode.