Patents by Inventor Jonathan A. Shaw

Jonathan A. Shaw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High performance diode-implanted voltage-controlled poly resistors for mixed-signal and RF applications
    Patent number: 7148556
    Abstract: A p-type polysilicon resistor formed in the inter-level dielectric layer contains an implanted diode. A positive voltage applied to the diode modulates the depletion region of the diode and changes the absolute resistance of the p-type polysilicon resistor. This modulation occurs not only horizontally, but also vertically. The fact that the tunable resistor is a p-type polysilicon resistor means that this structure can easily be integrated into the process since polysilicon is used as a gate material for basic CMOS processing.
    Type: Grant
    Filed: November 9, 2004
    Date of Patent: December 12, 2006
    Assignee: LSI Logic Corporation
    Inventors: Jonathan A. Shaw, Sean Erickson, Kevin Nunn