Patents by Inventor Jonathan BAKKE

Jonathan BAKKE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240401192
    Abstract: Various examples of the present disclosure relate to methods, systems, and apparatus for coupling a delivery vessel disposed at a first location on a substrate processing platform to a remote refill vessel disposed in a second location remote from the substrate processing platform, storing a chemical in the remote refill vessel in a first phase, changing the chemical in the remote refill vessel to a second phase, transporting the chemical in the second phase, to the delivery vessel, maintaining a temperature gradient within an inner volume of the delivery vessel, and returning the chemical to the first phase within the inner volume.
    Type: Application
    Filed: May 28, 2024
    Publication date: December 5, 2024
    Inventors: Eric James Shero, Paul Ma, Jereld Lee Winkler, Todd Robert Dunn, Shuaidi Zhang, Jacqueline Wrench, Shubham Garg, Jonathan Bakke
  • Publication number: 20240401194
    Abstract: The current disclosure relates to example method, system and apparatus for coupling a delivery vessel disposed at a first location on a substrate processing platform to a remote refill vessel disposed in a second location remote from the substrate processing platform via a first chemical delivery line, storing a chemical in the remote refill vessel in a first phase, changing the chemical in the remote refill vessel to a second phase, transporting the chemical in the second phase, to the delivery vessel via the first chemical delivery line, heating the first chemical delivery line to a first temperature equal to or above a phase change temperature of the chemical, and coupling the delivery vessel to an accumulator via a second chemical delivery line.
    Type: Application
    Filed: May 28, 2024
    Publication date: December 5, 2024
    Inventors: Shuaidi Zhang, Mustafa Muhammad, Moataz Bellah Mousa, Paul Ma, Jonathan Bakke, Todd Robert Dunn, Eric James Shero, Jereld Lee Winkler, YoungChol Byun, Shubham Garg, Jacqueline Wrench
  • Patent number: 12104253
    Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.
    Type: Grant
    Filed: June 9, 2023
    Date of Patent: October 1, 2024
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Elaina Babayan, Sarah White, Vijay Venugopal, Jonathan Bakke
  • Publication number: 20240218506
    Abstract: The substrate processing system includes a delivery vessel having a first inner volume, disposed in a first location on a substrate processing platform, a remote refill vessel in fluid communication with the delivery vessel via a chemical delivery line, the remote refill vessel comprising a second inner volume greater than the first inner volume and disposed in a second location remote from the substrate processing platform, and a first heating device or a first pressurizing device, or a combination thereof, proximate the remote refill vessel, operable to heat or pressurize, or a combination thereof, a chemical disposed in the remote refill vessel sufficient to change a phase of the chemical from a first phase to a second phase.
    Type: Application
    Filed: December 26, 2023
    Publication date: July 4, 2024
    Inventors: Eric James Shero, Jonathan Bakke, Arjav Prafulkumar Vashi, Todd Robert Dunn, Paul Ma, Jacqueline Wrench, Jereld Lee Winkler, Shuaidi Zhang, Shubham Garg, YoungChol Byun
  • Publication number: 20240191352
    Abstract: Various embodiments of the present technology may provide a first vessel to contain a slurry of a solid precursor powder and an inert liquid, a second vessel to receive the slurry, evaporate the inert liquid, and sublimate the solid precursor powder a first time to form a vapor, a third vessel to recondense the vapor back into a solid state and sublimate the solid precursor a second time to form a vapor, and a reaction chamber to receive the vapor from the third vessel.
    Type: Application
    Filed: December 6, 2023
    Publication date: June 13, 2024
    Inventors: Jereld Lee Winkler, Jacqueline Wrench, Paul Ma, Todd Robert Dunn, Jonathan Bakke, Eric James Shero, Shuaidi Zhang, Shubham Garg, YoungChol Byun
  • Publication number: 20240165681
    Abstract: Various embodiments of the present technology may provide methods and apparatus for cleaning a source vessel. The source vessel may be filled or partially filled with a solvent to form a solution. The solution is removed from the source vessel and contained in a waste vessel that is connected to the source vessel. The waste vessel may have a bellow or other mechanism inside of it to create a negative pressure in the waste vessel to pull the solution out of the source vessel and into the waste vessel. Alternatively, a liquid pump may be used to pull the solution from the source vessel to the waste vessel.
    Type: Application
    Filed: November 15, 2023
    Publication date: May 23, 2024
    Inventors: Jereld Lee Winkler, Paul Ma, Eric James Shero, Shubham Garg, Jonathan Bakke, Todd Dunn, Jacqueline Wrench, Shuaidi Zhang
  • Publication number: 20240133033
    Abstract: Herein disclosed are systems and methods related to delivery systems using solid source chemical fill vessels. The delivery system can include a vapor deposition reactor, two or more fill vessels, of which one of more can be remote from the vapor deposition reactor. Each fill vessel is configured to hold solid source chemical reactant therein. An interconnect line or conduit can fluidly connect the vapor deposition reactor with one or more of the fill vessels. A line heater can heat at least a portion of the interconnect line to at least a minimum line temperature.
    Type: Application
    Filed: January 3, 2024
    Publication date: April 25, 2024
    Inventors: Jacqueline Wrench, Shuaidi Zhang, Arjav Prafulkumar Vashi, Shubham Garg, Todd Robert Dunn, Moataz Bellah Mousa, Jonathan Bakke, Ibrahim Mohamed, Paul Ma, Bo Wang, Eric Shero, Jereld Lee Winkler
  • Publication number: 20230323540
    Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.
    Type: Application
    Filed: June 9, 2023
    Publication date: October 12, 2023
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Elaina BABAYAN, Sarah WHITE, Vijay VENUGOPAL, Jonathan BAKKE
  • Patent number: 11718914
    Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.
    Type: Grant
    Filed: September 4, 2020
    Date of Patent: August 8, 2023
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Elaina Babayan, Sarah White, Vijay Venugopal, Jonathan Bakke
  • Publication number: 20220403516
    Abstract: Reactor systems and methods for forming a layer comprising indium gallium zinc oxide are disclosed. The layer comprising indium gallium zinc oxide can be formed using one or more reaction chambers of a process module.
    Type: Application
    Filed: June 16, 2022
    Publication date: December 22, 2022
    Inventors: Paul Ma, Eric Shero, Todd Dunn, Jonathan Bakke, Jereld Winkler, Xingye Wang, Eric Jen Cheng Liu
  • Publication number: 20200399758
    Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.
    Type: Application
    Filed: September 4, 2020
    Publication date: December 24, 2020
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Elaina Babayan, Sarah White, Vijay Venugopal, Jonathan Bakke
  • Patent number: 10822699
    Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.
    Type: Grant
    Filed: April 5, 2018
    Date of Patent: November 3, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Elaina Babayan, Sarah White, Vijay Venugopal, Jonathan Bakke
  • Publication number: 20190203358
    Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.
    Type: Application
    Filed: April 5, 2018
    Publication date: July 4, 2019
    Applicant: Applied Materials, Inc.
    Inventors: Elaina Babayan, Sarah White, Vijay Venugopal, Jonathan Bakke
  • Patent number: 9947578
    Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.
    Type: Grant
    Filed: November 22, 2016
    Date of Patent: April 17, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yu Lei, Vikash Banthia, Kai Wu, Xinyu Fu, Yi Xu, Kazuya Daito, Feiyue Ma, Pulkit Agarwal, Chi-Chou Lin, Dien-Yeh Wu, Guoqiang Jian, Wei V. Tang, Jonathan Bakke, Mei Chang, Sundar Ramamurthy
  • Publication number: 20170148670
    Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.
    Type: Application
    Filed: November 22, 2016
    Publication date: May 25, 2017
    Inventors: YU LEI, VIKASH BANTHIA, KAI WU, XINYU FU, YI XU, KAZUYA DAITO, FEIYUE MA, PULKIT AGARWAL, CHI-CHOU LIN, DIEN-YEH WU, GUOQIANG JIAN, WEI V. TANG, JONATHAN BAKKE, MEI CHANG, SUNDAR RAMAMURTHY
  • Patent number: 9595466
    Abstract: Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WClx) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: March 14, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Xinyu Fu, Srinivas Gandikota, Mei Chang, Seshadri Ganguli, Guoqiang Jian, Yixiong Yang, Vikash Banthia, Jonathan Bakke
  • Publication number: 20160276214
    Abstract: Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WCIx) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.
    Type: Application
    Filed: May 20, 2015
    Publication date: September 22, 2016
    Inventors: Xinyu FU, Srinivas GANDIKOTA, Mei CHANG, Seshadri GANGULI, Guoqiang JIAN, Yixiong YANG, Vikash BANTHIA, Jonathan BAKKE