Abstract: Herein disclosed are systems and methods related to delivery systems using solid source chemical fill vessels. The delivery system can include a vapor deposition reactor, two or more fill vessels, of which one of more can be remote from the vapor deposition reactor. Each fill vessel is configured to hold solid source chemical reactant therein. An interconnect line or conduit can fluidly connect the vapor deposition reactor with one or more of the fill vessels. A line heater can heat at least a portion of the interconnect line to at least a minimum line temperature.

Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.

Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.

Abstract: Reactor systems and methods for forming a layer comprising indium gallium zinc oxide are disclosed. The layer comprising indium gallium zinc oxide can be formed using one or more reaction chambers of a process module.

Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.

Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.

Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.

Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

Abstract: Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WClx) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.

Abstract: Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WCIx) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.