Abstract: A method of depositing material and a system for depositing material are disclosed. Exemplary methods include dosing a substrate with a precursor and/or reactant while varying a pressure within the reaction chamber.

Abstract: Various embodiments of the present technology may provide methods and apparatus for cleaning a source vessel. The source vessel may be filled or partially filled with a solvent to form a solution. The solution is removed from the source vessel and contained in a waste vessel that is connected to the source vessel. The waste vessel may have a bellow or other mechanism inside of it to create a negative pressure in the waste vessel to pull the solution out of the source vessel and into the waste vessel. Alternatively, a liquid pump may be used to pull the solution from the source vessel to the waste vessel.

Abstract: Apparatus for supplying a vaporized reactant to a reaction chamber are disclosed. The apparatus disclosed includes a process control chamber in fluid communication with a supply vessel and an injection gas source is fluid communication with the process control chamber and configured to enable modification of the pressure within the process control chamber. Reactor systems including the apparatus for supplying a vaporized reactant to a reaction chamber are also disclosure. Methods for supplying vaporized reactant to a reaction are also disclosed.

Abstract: Various embodiments of the present technology may provide methods and apparatus for cleaning a source vessel. The source vessel may be filled or partially filled with a solvent to form a solution. The solution is removed from the source vessel and contained in a waste vessel that is connected to the source vessel. The waste vessel may have a bellow or other mechanism inside of it to create a negative pressure in the waste vessel to pull the solution out of the source vessel and into the waste vessel. Alternatively, a liquid pump may be used to pull the solution from the source vessel to the waste vessel.

Abstract: Disclosed is a method, system and apparatus for filling a gap feature on a substrate surface, comprising providing a substrate with a surface comprising a gap feature in a reaction chamber, depositing a first material layer into the gap feature with a first cyclic deposition process, etching the first material layer to form a base in a bottom portion of the gap feature with a cyclic etching process and partially filling the gap feature with a second material layer with a second cyclic deposition process.

Abstract: A substrate processing apparatus includes an upper chamber space, a lower chamber space, a susceptor, and a flow control ring assembly comprising a seal ring and a flow control ring having a shape to surround the susceptor, the flow control ring assembly sealing or substantially sealing the upper chamber space from the lower chamber space while the susceptor in a first position.

Abstract: Various examples of the present disclosure relate to methods, systems, and apparatus for coupling a delivery vessel disposed at a first location on a substrate processing platform to a remote refill vessel disposed in a second location remote from the substrate processing platform, storing a chemical in the remote refill vessel in a first phase, changing the chemical in the remote refill vessel to a second phase, transporting the chemical in the second phase, to the delivery vessel, maintaining a temperature gradient within an inner volume of the delivery vessel, and returning the chemical to the first phase within the inner volume.

Abstract: The current disclosure relates to example method, system and apparatus for coupling a delivery vessel disposed at a first location on a substrate processing platform to a remote refill vessel disposed in a second location remote from the substrate processing platform via a first chemical delivery line, storing a chemical in the remote refill vessel in a first phase, changing the chemical in the remote refill vessel to a second phase, transporting the chemical in the second phase, to the delivery vessel via the first chemical delivery line, heating the first chemical delivery line to a first temperature equal to or above a phase change temperature of the chemical, and coupling the delivery vessel to an accumulator via a second chemical delivery line.

Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.

Abstract: The substrate processing system includes a delivery vessel having a first inner volume, disposed in a first location on a substrate processing platform, a remote refill vessel in fluid communication with the delivery vessel via a chemical delivery line, the remote refill vessel comprising a second inner volume greater than the first inner volume and disposed in a second location remote from the substrate processing platform, and a first heating device or a first pressurizing device, or a combination thereof, proximate the remote refill vessel, operable to heat or pressurize, or a combination thereof, a chemical disposed in the remote refill vessel sufficient to change a phase of the chemical from a first phase to a second phase.

Abstract: Various embodiments of the present technology may provide a first vessel to contain a slurry of a solid precursor powder and an inert liquid, a second vessel to receive the slurry, evaporate the inert liquid, and sublimate the solid precursor powder a first time to form a vapor, a third vessel to recondense the vapor back into a solid state and sublimate the solid precursor a second time to form a vapor, and a reaction chamber to receive the vapor from the third vessel.

Abstract: Various embodiments of the present technology may provide methods and apparatus for cleaning a source vessel. The source vessel may be filled or partially filled with a solvent to form a solution. The solution is removed from the source vessel and contained in a waste vessel that is connected to the source vessel. The waste vessel may have a bellow or other mechanism inside of it to create a negative pressure in the waste vessel to pull the solution out of the source vessel and into the waste vessel. Alternatively, a liquid pump may be used to pull the solution from the source vessel to the waste vessel.

Abstract: Herein disclosed are systems and methods related to delivery systems using solid source chemical fill vessels. The delivery system can include a vapor deposition reactor, two or more fill vessels, of which one of more can be remote from the vapor deposition reactor. Each fill vessel is configured to hold solid source chemical reactant therein. An interconnect line or conduit can fluidly connect the vapor deposition reactor with one or more of the fill vessels. A line heater can heat at least a portion of the interconnect line to at least a minimum line temperature.

Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.

Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.

Abstract: Reactor systems and methods for forming a layer comprising indium gallium zinc oxide are disclosed. The layer comprising indium gallium zinc oxide can be formed using one or more reaction chambers of a process module.

Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.

Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.

Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.

Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.