Abstract: Integrated circuit (IC) devices having direct-bonded dies. An IC device may include an IC substrate with a dielectric layer and a fluorophore between sidewalls of the dielectric layer. The fluorophore may be a quantum dot. The IC device may include a second IC substrate with a second fluorophore, the second IC substrate hybrid bonded with the first IC substrate fluorophore, and the first and second fluorophores vertically aligned. The first fluorophore may absorb light at a first wavelength and emit light at a second wavelength, and the second fluorophore may absorb light at the second wavelength and emit light at a third wavelength. The light at a third wavelength may be detected and used to align the first and second IC substrates, e.g., before direct bonding.

Abstract: Disclosed herein are microelectronic assemblies with direct bonding using nanotwinned copper (NTC). An example microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding (DB) region, wherein the DB region includes a DB contact comprising a first portion and a second portion having different microstructures. The first portion is between the first microelectronic component and the second portion. The second portion is between the first portion and the second microelectronic component. In some implementations, the first portion has non-columnar microstructure, and the second portion has columnar microstructure. In some implementations, less than about 40% of grains of the first portion have ac <111> orientation, and at least about 50% of grains of the second portion have the <111> orientation.

Abstract: Disclosed herein are IC structures with backside power delivery (BPD) using conductive materials with preferential grain alignment. An example IC structure may include a device layer including a plurality of transistors, the device layer having a first side and a second side opposite the first side; one or more backend layers at the first side of the device layer, the one or more backend layers including backend interconnects coupled to one or more of the plurality of transistors; and a BPD arrangement that includes one or more backside layers at the second side of the device layer, wherein the one or more backside layers include an insulator material, an opening in the insulator material, the opening lined with a liner material, and a conductive material within the opening lined with the liner material, wherein the conductive material has a preferential grain alignment.

Abstract: The present specification discloses a play and practice apparatus, system and associated methods of use and kits comprising such play and practice apparatus and/or system. In particular aspects, the play and practice apparatus, system and associated methods of use are utilized for practice and/or games utilizing a ball. In one aspect, the play and practice apparatus has a first playing surface and a second playing surface substantially opposing the first playing surface, and the ball can be a volleyball. In another aspect, the play and practice apparatus is useful as a training aid as well as for playing a game utilizing the play and practice apparatus.

Abstract: Disclosed herein are microelectronic assemblies with direct bonding using nanotwinned copper (NTC). An example microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding (DB) region, wherein the DB region includes a DB contact comprising a first portion and a second portion having different microstructures. The first portion is between the first microelectronic component and the second portion. The second portion is between the first portion and the second microelectronic component. In some implementations, the first portion has non-columnar microstructure, and the second portion has columnar microstructure. In some implementations, less than about 40% of grains of the first portion have ac <111> orientation, and at least about 50% of grains of the second portion have the <111> orientation.

Abstract: The present specification discloses a play and practice apparatus, system and associated methods of use and kits comprising such play and practice apparatus and/or system. In particular aspects, the play and practice apparatus, system and associated methods of use are utilized for practice and/or games utilizing a ball. In one aspect, the play and practice apparatus has a first playing surface and a second playing surface substantially opposing the first playing surface, and the ball can be a volleyball. In another aspect, the play and practice apparatus is useful as a training aid as well as for playing a game utilizing the play and practice apparatus.

Abstract: The present specification discloses a play and practice apparatus, system and associated methods of use and kits comprising such play and practice apparatus and/or system. In particular aspects, the play and practice apparatus, system and associated methods of use are utilized for practice and/or games utilizing a ball. In one aspect, the play and practice apparatus has a first playing surface and a second playing surface substantially opposing the first playing surface, and the ball can be a volleyball. In another aspect, the play and practice apparatus is useful as a training aid as well as for playing a game utilizing the play and practice apparatus.