Patents by Inventor Jonathan Byron Smith

Jonathan Byron Smith has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for fabricating a semiconductor device, which include selectively depositing an electrically conductive material
    Patent number: 7329582
    Abstract: Methods are provided for fabricating a semiconductor device having an impurity doped region in a silicon substrate. The method comprises forming a metal silicide layer electrically contacting the impurity doped region and depositing a conductive layer overlying and electrically contacting the metal silicide layer. A dielectric layer is deposited overlying the conductive layer and an opening is etched through the dielectric layer to expose a portion of the conductive layer. A conductive material is selectively deposited to fill the opening and to electrically contact the impurity doped region.
    Type: Grant
    Filed: June 15, 2005
    Date of Patent: February 12, 2008
    Assignee: Advanced Micro Devices, Inc.
    Inventors: James Pan, Jonathan Byron Smith, Ming-Ren Lin